High aspect ratio gate structure formation
US-12598796-B2 · Apr 7, 2026 · US
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LEE Kai-Hsuan patents
LEE Kai-Hsuan is listed as an inventor on 166 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | LEE Kai-Hsuan |
| Total patents | 166 |
| First publication | Aug 18, 2016 |
| Latest publication | Apr 7, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Methods of reducing parasitic capacitance in semiconductor devices
US-2026082676-A1 · Mar 19, 2026 · US
Semiconductor structure
US-12543560-B2 · Feb 3, 2026 · US
Scalable patterning through layer expansion process and resulting structures
US-12532723-B2 · Jan 20, 2026 · US
Isolation Structures
US-2026013206-A1 · Jan 8, 2026 · US
Semiconductor structure
US-2025366046-A1 · Nov 27, 2025 · US
Methods of reducing parasitic capacitance in semicondutor devices
US-12484292-B2 · Nov 25, 2025 · US
Transistor gate contacts
US-2025349607-A1 · Nov 13, 2025 · US
Semiconductor structure and method for manufacturing the same
US-12464774-B2 · Nov 4, 2025 · US
Fin field-effect transistor device and method
US-2025338613-A1 · Oct 30, 2025 · US
Recent patents
Latest publications not already listed above.
Scalable patterning through layer expansion process and resulting structures
US-2025323092-A1 · Oct 16, 2025 · US
Semiconductor device having a uniform and thin silicide layer on an epitaxial source/drain structure and manufacturing method thereof
US-2025323043-A1 · Oct 16, 2025 · US
METHOD OF MANUFACTURING A FinFET BY IMPLANTING A DIELECTRIC WITH A DOPANT
US-2025324653-A1 · Oct 16, 2025 · US
Self-aligned contact air gap formation
US-2025324683-A1 · Oct 16, 2025 · US
Isolation structures
US-12439678-B2 · Oct 7, 2025 · US
Fin field-effect transistor device and method
US-2025311350-A1 · Oct 2, 2025 · US
Finfet structure with airgap and method of forming the same
US-2025311374-A1 · Oct 2, 2025 · US
Device having an air gap adjacent to a contact plug and covered by a doped dielectric layer
US-12432963-B2 · Sep 30, 2025 · US
FinFET structure with airgap and method of forming the same
US-12433008-B2 · Sep 30, 2025 · US
Flexible merge scheme for source/drain epitaxy regions
US-12408315-B2 · Sep 2, 2025 · US
Self-aligned contact air gap formation
US-12376351-B2 · Jul 29, 2025 · US
Fin field-effect transistor device and method
US-12376357-B2 · Jul 29, 2025 · US
Semiconductor device having a uniform and thin silicide layer on an epitaxial source/drain structure
US-12362187-B2 · Jul 15, 2025 · US
Semiconductor device structure and method for forming the same
US-12324202-B2 · Jun 3, 2025 · US
FINFET Device with Wrapped-Around Epitaxial Structure and Manufacturing Method Thereof
US-2025169159-A1 · May 22, 2025 · US
FINFET device with wrapped-around epitaxial structure and manufacturing method thereof
US-12237231-B2 · Feb 25, 2025 · US
Air gap formation between gate spacer and epitaxy structure
US-12218138-B2 · Feb 4, 2025 · US
Fin field effect transistor having airgap and method for manufacturing the same
US-12165925-B2 · Dec 10, 2024 · US
Air gaps in memory array structures
US-2024404875-A1 · Dec 5, 2024 · US
Semiconductor device structure and method for forming the same
US-2024387626-A1 · Nov 21, 2024 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Taiwan Semiconductor Mfg Co Ltd | 174 |
| Taiwan Semiconductor Mfg Company Co Ltd | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D30/024 | 143 |
| H10D30/62 | 110 |
| H10D84/038 | 108 |
| H10D64/017 | 103 |
| H01L29/66795 | 87 |