Field-effect transistor (FET) with self-aligned ferroelectric capacitor and methods of fabrication
US-12166122-B2 · Dec 10, 2024 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D30/024 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 24,433 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 1,460 |
| 2016 | 2,164 |
| 2017 | 2,458 |
| 2018 | 2,423 |
| 2019 | 2,531 |
| 2020 | 2,792 |
| 2021 | 2,353 |
| 2022 | 2,197 |
| 2023 | 2,036 |
| 2024 | 1,983 |
| 2025 | 1,766 |
| 2026 | 270 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Transistor contacts and methods of forming the same
US-2024395871-A1 · Nov 28, 2024 · US
Semiconductor device and method
US-2024395867-A1 · Nov 28, 2024 · US
Semiconductor device and method for forming the same
US-2024395669-A1 · Nov 28, 2024 · US
Method for semiconductor device structure
US-12154970-B2 · Nov 26, 2024 · US
Methods of forming semiconductor devices
US-2024387699-A1 · Nov 21, 2024 · US
Gate isolation features and methods of fabricating the same in semiconductor devices
US-2024379673-A1 · Nov 14, 2024 · US
Method for forming source/drain contacts
US-2024379814-A1 · Nov 14, 2024 · US
Nano transistors with source/drain having side contacts to 2-d material
US-2024379800-A1 · Nov 14, 2024 · US
Semiconductor device
US-2024363707-A1 · Oct 31, 2024 · US
Methods for forming recesses in source/drain regions and devices formed thereof
US-12132089-B2 · Oct 29, 2024 · US
Method of forming a gate structure
US-2024332089-A1 · Oct 3, 2024 · US
Gate structure of semiconductor device and method of forming same
US-2024322016-A1 · Sep 26, 2024 · US
Active pattern structure and semiconductor device including the same
US-12094975-B2 · Sep 17, 2024 · US
Cfet with via fuse structure and method
US-2024290865-A1 · Aug 29, 2024 · US
Tungsten deposition on a cobalt surface
US-12065731-B2 · Aug 20, 2024 · US
Gate Dielectric for Gate Leakage Reduction
US-2024266415-A1 · Aug 8, 2024 · US
Semiconductor devices including low-k metal gate isolation and methods of fabrication thereof
US-12009259-B2 · Jun 11, 2024 · US
Integrated circuits with finfet gate structures
US-2024105719-A1 · Mar 28, 2024 · US
Semiconductor device structure and method for forming the same
US-2024105775-A1 · Mar 28, 2024 · US
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Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D30/024?
- CPC H10D30/024 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H10D30/024 (Electricity)?
- Our database includes 24,433 publications tagged with this CPC code.
- Is patent activity under CPC H10D30/024 growing?
- Publication counts under this code: 1,983 in 2024 vs 1,766 in 2025 (latest complete years).