Air gap formation between gate spacer and epitaxy structure

Patent metadata

Field	Value
Publication number	US-12218138-B2
Application number	US-202318510370-A
Country	US
Kind code	B2
Filing date	Nov 15, 2023
Priority date	Oct 30, 2018
Publication date	Feb 4, 2025
Grant date	Feb 4, 2025

Abstract

A semiconductor device includes source/drain regions, a gate structure, a first gate spacer, and a dielectric material. The source/drain regions are over a substrate. The gate structure is laterally between the source/drain regions. The first gate spacer is on a first sidewall of the gate structure, and spaced apart from a first one of the source/drain regions at least in part by a void region. The dielectric material is between the first one of the source/drain regions and the void region. The dielectric material has a gradient ratio of a first chemical element to a second chemical element.

First claim

What is claimed is:

1. A semiconductor device, comprising:
source/drain regions over a substrate;
a gate structure laterally between the source/drain regions;
a first gate spacer on a first sidewall of the gate structure, and spaced apart from a first one of the source/drain regions at least in part by a void region; and
a dielectric material between the first one of the source/drain regions and the void region, the dielectric material having a gradient ratio of a first chemical element to a second chemical element.

2. The semiconductor device of claim 1 , wherein the first chemical element is silicon.

3. The semiconductor device of claim 1 , wherein the second chemical element is nitrogen.

4. The semiconductor device of claim 1 , wherein the first gate spacer comprises a vertical portion on the first sidewall of the gate structure, and a horizontal portion directly below the dielectric material.

5. The semiconductor device of claim 4 , wherein the gradient ratio of the first chemical element to the second chemical element increases as a distance from the horizontal portion of the first gate spacer increases.

6. The semiconductor device of claim 4 , wherein the dielectric material has a density increasing as a distance from the horizontal portion of the first gate spacer increases.

7. The semiconductor device of claim 1 , further comprising:
a second gate spacer extending from the first gate spacer to over the first one of the source/drain regions, the second gate spacer defining a top boundary of the void region.

8. The semiconductor device of claim 7 , wherein the dielectric material is spaced apart from the second gate spacer.

9. The semiconductor device of claim 1 , wherein the first one of the source/drain regions has an inner sidewall facing the void region, and an interface formed by the inner sidewall and the dielectric material is more linear than an upper portion of the inner sidewall that is spaced apart from the dielectric material.

10. A semiconductor device, comprising:
a gate structure extending across a semiconductor fin;
source/drain epitaxial regions on the semiconductor fin and spaced apart from the gate structure at least by air-containing regions; and
a dielectric structure between a first one of the source/drain epitaxial regions and a first one of the air-containing regions, the dielectric structure having a gradient density.

11. The semiconductor device of claim 10 , wherein the gradient density of the dielectric structure increases as a distance from the semiconductor fin increases.

12. The semiconductor device of claim 10 , wherein the dielectric structure is silicon nitride.

13. The semiconductor device of claim 10 , wherein the dielectric structure has a gradient silicon-to-nitrogen atomic ratio.

14. The semiconductor device of claim 13 , wherein the gradient silicon-to-nitrogen atomic ratio increases as a distance from the semiconductor fin increases.

15. The semiconductor device of claim 10 , further comprising:
a first gate spacer on a first sidewall of the gate structure, the first gate spacer having an L-shaped cross-sectional pattern bordering the first one of the first air-containing regions; and
a second gate spacer on a second sidewall of the gate structure, the second gate spacer having an L-shaped cross-sectional pattern bordering a second one of the first air-containing regions.

16. The semiconductor device of claim 15 , further comprising:
a third gate spacer alongside the first gate spacer and over the first one of the source/drain epitaxial regions, the third gate spacer defining a top border of the first one of the first air-containing regions; and
a fourth gate spacer alongside the second gate spacer and over a second one of the source/drain epitaxial regions, the fourth gate spacer defining a top border of the second one of the first air-containing regions.

17. A semiconductor device, comprising:
an n-type transistor comprising a first gate structure and n-type source/drain regions on opposite sides of the first gate structure, the first gate structure being spaced apart from the n-type source/drain regions at least by first air-containing regions; and
a p-type transistor comprising a second gate structure and p-type source/drain regions on opposite sides of the second gate structure, the second gate structure being spaced apart from the p-type source/drain regions at least by second air-containing regions,
wherein the n-type source/drain regions have inner surfaces facing the first air-containing regions, and the p-type source/drain regions have inner surfaces facing the second air-containing regions, and the inner surfaces of the n-type source/drain regions are rougher than the inner surfaces of the p-type source/drain regions.

18. The semiconductor device of claim 17 , wherein each of the inner surfaces of the n-type source/drain regions has a residue-containing region and a residue-free region over the residue-containing region, and the residue-free regions are rougher than the residue-containing regions.

19. The semiconductor device of claim 18 , wherein dielectric residues on the residue-containing regions of the inner surfaces of the n-type source/drain regions have a gradient ratio of silicon to nitrogen.

20. The semiconductor device of claim 18 , wherein dielectric residues on the residue-containing regions of the inner surfaces of the n-type source/drain regions have a gradient density.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Lai Bo-Yu
• LEE Kai-Hsuan
• Lee Wei-Yang
• Yang Feng-Cheng
• Chen Yen-Ming

Classifications

• H10P50/283

  by chemical means · CPC title

• H10D84/0193

  the components including FinFETs · CPC title

• H10D84/0184

  Manufacturing their gate sidewall spacers · CPC title

• H10D84/0158

  the components including FinFETs · CPC title

• H10D84/0147

  Manufacturing their gate sidewall spacers · CPC title