Self-aligned contact air gap formation

Patent metadata

Field	Value
Publication number	US-2025324683-A1
Application number	US-202519247644-A
Country	US
Kind code	A1
Filing date	Jun 24, 2025
Priority date	Sep 27, 2018
Publication date	Oct 16, 2025
Grant date	—

Abstract

In one example aspect, a method for integrated circuit (IC) fabrication comprises providing a device structure including a substrate, a source/drain (S/D) feature on the substrate, a gate stack on the substrate, a contact hole over the S/D feature; and a dummy feature over the S/D feature and between the gate stack and the contact hole. The method further comprises forming in the contact hole a contact plug that is electrically coupled to the S/D feature, and, after forming the contact plug, selectively removing the dummy feature to form an air gap that extends higher than a top surface of the gate stack. The method further comprises forming over the contact plug a seal layer that covers the air gap.

First claim

What is claimed is:

1 . A device structure, comprising:
an active region comprising a first channel region, a second channel region and a source/drain region between the first channel region and the second channel region along a direction; a first gate stack over the first channel region; a first gate spacer extending along a sidewall of the first gate stack; a second gate stack over the second channel region;
a second gate spacer extending along a sidewall of the second gate stack;
a source/drain feature disposed in the source/drain region; and
a contact plug over the source/drain feature and disposed between the first gate stack and the second gate stack,
wherein the contact plug is spaced apart from the sidewall of the first gate stack by a first air gap and the first gate spacer,
wherein the contact plug is spaced apart from the sidewall of the second gate stack by a second air gap, an interlayer dielectric layer, a contact etch stop layer, and the second gate spacer.

2 . The device structure of claim 1 ,
wherein the first air gap laterally extends over a top surface of the first gate stack, wherein the second air gap does not laterally extend over a top surface of the second gate stack.

3 . The device structure of claim 1 , further comprising:
an interlayer dielectric (ILD) layer over the first gate stack and the second gate stack; and a seal layer over the ILD layer and the contact plug.

4 . The device structure of claim 3 , wherein the seal layer is disposed over the first air gap and the second air gap to seal them.

5 . The device structure of claim 3 , wherein the seal layer partially extends between the ILD layer and the contact plug.

6 . The device structure of claim 1 , wherein the first gate spacer comprises a rounded corner profile.

7 . The device structure of claim 1 , further comprising:
a nitride liner disposed along sidewalls of the contact plug.

8 . The device structure of claim 7 , wherein the nitride liner comprises carbon-doped silicon nitride.

9 . The device structure of claim 1 , further comprising:
a metal silicide layer disposed between the contact plug and the source/drain feature, wherein the metal silicide layer comprises nickel silicide, cobalt silicide, or titanium silicide.

10 . A structure, comprising:
a first gate stack and a second gate stack; a contact plug disposed between the first gate stack and the second gate stack along a direction; a first gate spacer disposed along a sidewall of the first gate stack; a second gate spacer disposed along a sidewall of the second gate stack; a contact etch stop layer (CESL) having a first portion disposed over the first gate stack and a second portion disposed over the second gate stack; an interlayer dielectric (ILD) layer having a first portion over the first portion of the CESL and a second portion over the second portion of the CESL; a first air gap disposed between the contact plug and the first gate stack; a second air gap disposed between the contact plug and the second gate stack; and a seal layer over the ILD layer, the first air gap, the contact plug, and the second air gap, wherein the contact plug is closer to the first gate spacer than to the second gate spacer.

11 . The structure of claim 10 , wherein the first gate stack and the first gate spacer are exposed in the first air gap.

12 . The structure of claim 10 , wherein the second gate stack and the second gate spacer are not exposed in the second air gap.

13 . The structure of claim 10 ,
wherein the first air gap laterally extends over a top surface of the first gate stack, wherein the second air gap does not laterally extend over a top surface of the second gate stack.

14 . The structure of claim 10 , wherein the first gate spacer comprises a rounded corner profile.

15 . The structure of claim 10 , further comprising:
a nitride liner disposed along sidewalls of the contact plug such that the nitride liner is disposed between the first air gap and the contact plug along the direction and is disposed between the second air gap and the contact plug along the direction.

16 . The structure of claim 15 , wherein the nitride liner comprises carbon-doped silicon nitride.

17 . A device structure, comprising:
an active region comprising a first channel region, a second channel region and a source/drain region between the first channel region and the second channel region along a direction; a first gate stack over the first channel region; a second gate stack over the second channel region; a source/drain feature over the source/drain region; a contact plug disposed over the source/drain feature;; a first gate spacer disposed along a sidewall of the first gate stack; a second gate spacer disposed along a sidewall of the second gate stack; a contact etch stop layer (CESL) having a first portion disposed over the first gate stack and a second portion disposed over the second gate stack and the second gate spacer; an interlayer dielectric (ILD) layer having a first portion over the first portion of the CESL and a second portion over the second portion of the CESL; a first air gap disposed between the contact plug and the first gate stack; a second air gap disposed between the contact plug and the second gate stack; and a seal layer over the ILD layer, the first air gap, the contact plug, and the second air gap, wherein the first air gap laterally extends over a top surface of the first gate stack, wherein the second air gap does not laterally extend over a top surface of the second gate stack.

18 . The device structure of claim 17 ,
wherein the first gate stack and the first gate spacer are exposed in the first air gap, wherein the second gate stack and the second gate spacer are not exposed in the second air gap.

19 . The device structure of claim 17 , further comprising:
a nitride liner disposed along sidewalls of the contact plug such that the nitride liner is disposed between the first air gap and the contact plug along the direction and is disposed between the second air gap and the contact plug along the direction.

20 . The device structure of claim 17 , wherein the contact plug is closer to the first gate spacer than to the second gate spacer.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• LEE Kai-Hsuan
• Lai Bo-Yu
• Yeong Sai-Hooi
• Yang Feng-Cheng
• Lin Yih-Ann
• Chen Yen-Ming

Classifications

• H10W76/60

  Seals · CPC title

• H10W20/072

  of dielectric parts comprising air gaps · CPC title

• H10W20/069 Primary

  by forming self-aligned vias or self-aligned contact plugs · CPC title

• H10W20/46

  comprising air gaps · CPC title

• H10W20/032

  of conductive barrier, adhesion or liner layers · CPC title