Layer stacks for a resistive memory element
US-12557563-B2 · Feb 17, 2026 · US
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Yi Wanbing patents
Yi Wanbing is listed as an inventor on 158 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Yi Wanbing |
| Total patents | 158 |
| First publication | Mar 5, 2015 |
| Latest publication | Feb 17, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Thin film resistor with viabar structure
US-12555705-B2 · Feb 17, 2026 · US
Segmented seal rings and methods of making thereof
US-2026026350-A1 · Jan 22, 2026 · US
Thin film resistor with viabar structure
US-2026018320-A1 · Jan 15, 2026 · US
Face bonded semiconductor device with through oxide via and metal plug
US-12506050-B1 · Dec 23, 2025 · US
Air gap with inverted T-shaped lower portion extending through at least one metal layer, and related method
US-12500119-B2 · Dec 16, 2025 · US
Protective moisture barrier and crack stop structure for ic chip using air gap in liner in deep trench
US-2025372535-A1 · Dec 4, 2025 · US
Semiconductor devices having non-uniform pattern density for hybrid bonding
US-2025357396-A1 · Nov 20, 2025 · US
Structure with ic die with enlarged area in scribe region
US-2025343172-A1 · Nov 6, 2025 · US
Via bars interleaved with capacitor structure
US-2025329631-A1 · Oct 23, 2025 · US
Recent patents
Latest publications not already listed above.
Structures including metal-insulator-metal (mim) capacitors with voids
US-2025311253-A1 · Oct 2, 2025 · US
Capacitor and airgap structure
US-12388006-B2 · Aug 12, 2025 · US
Structures including a photodetector and multiple deep trenches
US-2025255023-A1 · Aug 7, 2025 · US
Capacitors with floating metal layers
US-2025149434-A1 · May 8, 2025 · US
Layer stacks for a resistive memory element
US-2024268241-A1 · Aug 8, 2024 · US
SRAM bit cells with three-dimensional integration
US-12009326-B2 · Jun 11, 2024 · US
Memory devices and methods of forming the same
US-11978510-B2 · May 7, 2024 · US
Resistive memory devices with a cavity between electrodes
US-2024049611-A1 · Feb 8, 2024 · US
Air gap with inverted t-shaped lower portion extending through at least one metal layer, and related method
US-2023411208-A1 · Dec 21, 2023 · US
Structure including discrete dielectric member for protecting first air gap during forming of second air gap
US-2023402317-A1 · Dec 14, 2023 · US
Capacitor and airgap structure
US-2023402365-A1 · Dec 14, 2023 · US
Galvanic isolation using isolation break between redistribution layer electrodes
US-2023361173-A1 · Nov 9, 2023 · US
Galvanic isolation using isolation break between redistribution layer electrodes
US-11791379-B2 · Oct 17, 2023 · US
Sram bit cells with three-dimensional integration
US-2023238342-A1 · Jul 27, 2023 · US
Correlated electron resistive memory device and integration schemes
US-11690306-B2 · Jun 27, 2023 · US
Galvanic isolation using isolation break between redistribution layer electrodes
US-2023197776-A1 · Jun 22, 2023 · US
Conductive line structure having corrugated surface
US-2023197610-A1 · Jun 22, 2023 · US
Memory cells and methods for forming memory cells
US-11641789-B2 · May 2, 2023 · US
Correlated electron resistive memory device and integration schemes
US-2023053935-A1 · Feb 23, 2023 · US
Memory cells and methods for forming memory cells
US-2022416160-A1 · Dec 29, 2022 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Globalfoundries Sg Pte Ltd | 155 |
| Globalfoundries Inc | 2 |
| Inst Of Microelectronics | 2 |
| Globalfoundaries Singapore Pte Ltd | 1 |
| Alsephina Innovations Inc | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.