Memory cells and methods for forming memory cells

Patent metadata

Field	Value
Publication number	US-11641789-B2
Application number	US-202117355260-A
Country	US
Kind code	B2
Filing date	Jun 23, 2021
Priority date	Jun 23, 2021
Publication date	May 2, 2023
Grant date	May 2, 2023

Abstract

According to various embodiments, there is provided a memory cell. The memory cell may include a transistor, a dielectric member, an electrode and a contact member. The dielectric member may be disposed over the transistor. The electrode may be disposed over the dielectric member. The contact member has a first end and a second end opposite to the first end. The first end is disposed towards the transistor, and the second end is disposed towards the dielectric member. The contact member has a side surface extending from the first end to the second end. The second end may have a recessed end surface that has a section that slopes towards the side surface so as to form a tip with the side surface at the second end. The dielectric member may be disposed over the second end of the contact member and may include at least a portion disposed over the tip.

First claim

The invention claimed is:

1. A memory cell comprising:
a transistor;
a dielectric member disposed over the transistor;
an electrode disposed over the dielectric member; and
a contact member having a first end and a second end opposite the first end, the first end disposed towards the transistor and the second end disposed towards the dielectric member, wherein the contact member has a side surface extending from the first end to the second end, the second end having a recessed end surface, the recessed end surface having a section that slopes towards the side surface so as to form a tip with the side surface at the second end,
wherein the dielectric member is disposed over the second end of the contact member and comprises at least a portion disposed over the tip.

2. The memory cell of claim 1 , wherein the electrode and the contact member are configured to apply an electric field across the dielectric member, for changing a resistance of the dielectric member.

3. The memory cell of claim 1 , wherein the first end of the contact member is electrically coupled to the transistor.

4. The memory cell of claim 1 , wherein the contact member electrically connects the dielectric member to the transistor.

5. The memory cell of claim 1 , wherein the contact member further comprises another side surface extending from the first end to the second end, the recessed end surface having another section that slopes towards the another side surface so as to form another tip with the another side surface at the second end, wherein the dielectric member further comprises another portion disposed over the another tip.

6. The memory cell of claim 1 , wherein the transistor is disposed in a first layer of the memory cell, wherein the dielectric member and the electrode are disposed in a second layer of the memory cell, wherein the contact member extends vertically from the first layer to the second layer.

7. The memory cell of claim 6 , further comprising:
an insulator material disposed between the first layer and the second layer.

8. The memory cell of claim 1 , wherein the recessed end surface has a concave cross-sectional profile.

9. The memory cell of claim 1 , wherein the dielectric member is disposed over an entire area of the recessed end surface.

10. The memory cell of claim 1 , wherein the dielectric member is disposed over only half of the recessed end surface.

11. The memory cell of claim 1 , wherein the contact member comprises a metal.

12. The memory cell of claim 1 , wherein the electrode, the dielectric member, and the contact member comprises a memristor.

13. The memory cell of claim 1 , wherein the dielectric member extends laterally from the side surface at the second end of the contact member.

14. A method for forming a memory cell, the method comprising:
forming a transistor;
forming a dielectric member over the transistor;
forming an electrode over the dielectric member; and
forming a contact member having a first end and a second end opposite to the first end, the first end disposed towards the transistor and the second end disposed towards the dielectric member, wherein the contact member has a side surface extending from the first end to the second end, the second end having a recessed end surface, the recessed end surface having a section that slopes towards the side surface so as to form a tip with the side surface at the second end;
wherein the dielectric member is disposed over the second end of the contact member and comprises at least a portion disposed over the tip.

15. The method of claim 14 , wherein forming the contact member comprises:
forming a cavity in an insulator material and a layer comprising the transistor, wherein the cavity extends vertically from an upper surface of the insulator material to a lower surface of the insulator material through to the layer comprising the transistor,
depositing a metal into the cavity, and
performing chemical mechanical polishing on the deposited metal to form a recess at the second end of the contact member.

16. The method of claim 15 , further comprising:
removing the insulator material around the second end of the contact member to expose the side surface at the second end of the contact member.

17. The method of claim 16 , wherein forming the dielectric member comprises:
depositing a dielectric material over the remaining insulator material and the second end of the contact member.

18. The method of claim 17 , wherein forming the electrode comprises:
depositing an electrode material over the deposited dielectric material.

19. The method of claim 18 , wherein forming the dielectric member and forming the electrode further comprises:
removing the dielectric material and the electrode material overlying half of the recessed end surface.

20. The method of claim 14 , further comprising:
forming an upper via over the electrode, wherein the upper via connects the electrode to a metallization layer arranged above a layer comprising the dielectric member.

Assignees

• Globalfoundries Sg Pte Ltd

Inventors

• Jiang Yi
• Lin Benfu
• Leong Lup San
• Hsieh Curtis Chun-I
• Yi Wanbing
• Tan Juan Boon

Classifications

• H10N70/20

  Multistable switching devices, e.g. memristors · CPC title

• H10B63/30 Primary

  comprising selection components having three or more electrodes, e.g. transistors · CPC title

• H10N70/8418 Primary

  adapted for focusing electric field or current, e.g. tip-shaped · CPC title

• H10N70/011

  Manufacture or treatment of multistable switching devices · CPC title

• H10N70/24

  based on migration or redistribution of ionic species, e.g. anions, vacancies · CPC title