Galvanic isolation using isolation break between redistribution layer electrodes

Patent metadata

Field	Value
Publication number	US-11791379-B2
Application number	US-202117644626-A
Country	US
Kind code	B2
Filing date	Dec 16, 2021
Priority date	Dec 16, 2021
Publication date	Oct 17, 2023
Grant date	Oct 17, 2023

Abstract

A structure includes a galvanic isolation including a horizontal portion including a first redistribution layer (RDL) electrode in a first insulator layer, and a second RDL electrode in the first insulator layer laterally spaced from the first RDL electrode. An isolation break includes a trench defined in the first insulator layer between the first RDL electrode and the second RDL electrode, and at least one second insulator layer in the trench. The first insulator layer and the second insulator layer(s) are between the first RDL electrode and the second RDL electrode. The isolation may separate, for example, voltage domains having different voltage levels. A related method is also disclosed. The isolation may also include a vertical portion using the first RDL electrode and another electrode in a metal layer separated from the first RDL electrode by a plurality of interconnect dielectric layers.

First claim

What is claimed is:

1. A structure, comprising:
a galvanic isolation including a horizontal portion including:
a first redistribution layer (RDL) electrode in a first insulator layer;
a second RDL electrode in the first insulator layer laterally spaced from the first RDL electrode; and
an isolation break including a trench defined in the first insulator layer between the first RDL electrode and the second RDL electrode and at least one second insulator layer in the trench,
wherein the first insulator layer and the at least one second insulator layer are between the first RDL electrode and the second RDL electrode.

2. The structure of claim 1 , wherein each second insulator layer has a higher dielectric constant than the first insulator layer.

3. The structure of claim 1 , wherein the at least one second insulator layer includes at least one nitride layer and at least one oxide layer.

4. The structure of claim 3 , wherein the at least one nitride layer lines a sidewall of the trench, and the at least one oxide layer fills a remaining portion of the trench.

5. The structure of claim 1 , wherein the first insulator layer includes a polyimide.

6. The structure of claim 1 , wherein the isolation break surrounds the first RDL electrode.

7. The structure of claim 1 , wherein the galvanic isolation includes a vertical portion including a third electrode under the first RDL electrode and in a metal layer of a first voltage domain, the third electrode vertically separated from the first RDL electrode by a plurality of interconnect dielectric layers.

8. The structure of claim 7 , wherein the second RDL electrode is electrically coupled by a plurality of interconnect layers to a second voltage domain, the first voltage domain and the second voltage domain having different operative voltages.

9. The structure of claim 1 , wherein the first insulator layer includes at least one nitride layer and at least one oxide layer.

10. The structure of claim 1 , wherein the first RDL electrode and the second RDL electrode are at the same level in the first insulator layer.

11. A structure, comprising:
a high-voltage domain on a substrate;
a low-voltage domain on the substrate operating at a lower voltage than the high-voltage domain; and
a galvanic isolation isolating the high-voltage domain from the low-voltage domain, the galvanic isolation including a horizontal portion including:
a first redistribution layer (RDL) electrode in a first insulator layer over one of the high-voltage and low-voltage domains;
a second RDL electrode in the first insulator layer laterally separated from the first RDL electrode and operatively coupled to the other of the high-voltage and low-voltage domains; and
an isolation break including a trench defined in the first insulator layer between the first RDL electrode and the second RDL electrode, and at least one second insulator layer in the trench,
wherein the first insulator layer and the at least one second insulator layer are between the first RDL electrode and the second RDL electrode.

12. The structure of claim 11 , wherein each second insulator layer has a higher dielectric constant than the first insulator layer.

13. The structure of claim 11 , wherein the first insulator layer includes a polyimide, and the at least one second insulator layer includes at least one nitride layer and at least one oxide layer.

14. The structure of claim 11 , wherein the isolation break surrounds the first RDL electrode.

15. The structure of claim 11 , wherein the galvanic isolation includes a vertical portion including a third electrode under the first RDL electrode and in a metal layer of the one of the high-voltage and low-voltage domains, the third electrode vertically separated from the first RDL electrode by a plurality of interconnect dielectric layers.

16. The structure of claim 11 , wherein the first insulator layer includes at least one nitride layer and at least one oxide layer.

17. The structure of claim 11 , wherein the first RDL electrode and the second RDL electrode are at the same level in the first insulator layer.

Assignees

• Globalfoundries Sg Pte Ltd

Inventors

• Mun Bong Woong
• Yi Wanbing
• Tan Juan Boon
• Koo Jeoung Mo

Classifications

• H10W70/698

  Semiconductor materials that are electrically insulating, e.g. undoped silicon · CPC title

• H10W20/43

  Layouts of interconnections · CPC title

• H10W10/17

  formed using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H10W10/014 Primary

  using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H10W70/652

  Cross-sectional shapes · CPC title