Capacitor and airgap structure

Patent metadata

Field	Value
Publication number	US-2023402365-A1
Application number	US-202217836251-A
Country	US
Kind code	A1
Filing date	Jun 9, 2022
Priority date	Jun 9, 2022
Publication date	Dec 14, 2023
Grant date	—

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to capacitor structures and methods of manufacture. The structure includes: an airgap provided within a dielectric material; an insulator material across a top of the airgap and on a surface of the dielectric material; and a capacitor provided within the dielectric material and lined with the insulator material.

First claim

What is claimed:

1 . A structure comprising:
an airgap provided within a dielectric material; an insulator material across a top of the airgap and on a surface of the dielectric material; and a capacitor provided within the dielectric material and lined with the insulator material.

2 . The structure of claim 1 , wherein the insulator material lines sidewalls of the airgap.

3 . The structure of claim 1 , wherein the insulator material is over a liner material which is on the dielectric material.

4 . The structure of claim 3 , wherein the capacitor extends through the liner material.

5 . The structure of claim 3 , wherein a top surface of the capacitor is devoid of the liner material.

6 . The structure of claim 3 , wherein the capacitor includes a bottom plate, a top plate and an insulator material between the top plate and the bottom plate, the bottom plate having a height extending above a surface of the liner material.

7 . The structure of claim 1 , further comprising a U-shaped insulator material over a top plate of the capacitor, and a contact extending within the U-shaped insulator material to contact the top plate of the capacitor.

8 . The structure of claim 1 , wherein the capacitor comprises a bottom plate, a top plate and an insulator material between the top plate and the bottom plate, each of which are aligned with a trench in the dielectric material and which do not extend laterally over an upper surface of the insulator material.

9 . The structure of claim 8 , further comprising a wiring structure within the dielectric material and a liner material over the wiring structure and under the insulator material.

10 . The structure of claim 9 , wherein the bottom plate of the capacitor does not extend below the wiring structure.

11 . The structure of claim 9 , wherein the bottom plate of the capacitor has a height that exceeds a combination of the wiring structure and the liner material.

12 . The structure of claim 9 , wherein the bottom plate and the top plate of the capacitor do not extend laterally over the liner material.

13 . A structure comprising:
an airgap structure within a dielectric material; a wiring structure within the dielectric material; a liner over the dielectric material and wiring structure; and a capacitor within the dielectric material, the capacitor having a height greater than a combined height of the wiring structure and the liner.

14 . The structure of claim 13 , further comprising insulator material that lines and extends over the airgap structure.

15 . The structure of claim 14 , wherein the insulator material is under the capacitor and extends onto a surface of the liner.

16 . The structure of claim 14 , wherein the capacitor comprises a bottom plate, an insulator layer and a top plate, each of which has a surface planar with the insulator material.

17 . The structure of claim 16 , wherein the capacitor has a height greater than a combined height of the wiring structure and the liner.

18 . The structure of claim 13 , wherein a top surface of the capacitor is devoid of the liner.

19 . The structure of claim 13 , wherein a bottom plate of the capacitor is at or above a bottom surface of the wiring structure.

20 . A method comprising:
forming an airgap within a dielectric material, the forming of the airgap comprising:
forming a trench in the dielectric material; and
pinching off the trench with an insulator material which also lines sidewalls; and
forming a capacitor provided within the dielectric material and lined with the insulator material, the forming of the capacitor comprising:
forming another trench in the dielectric material;
lining the trench with the insulator material;
forming capacitor materials in the trench and over the insulator material; and
removing any excessive capacitor materials from a top surface of the insulator material.

Assignees

• Globalfoundries Sg Pte Ltd

Inventors

• Hsieh Chun-I
• KHOR Ee Jan
• Hsu Wei-Hui
• Yi Wanbing
• Tan Juan Boon

Classifications

• H10W20/081

  by forming openings in the dielectric parts · CPC title

• H10W20/072

  of dielectric parts comprising air gaps · CPC title

• H10W20/46

  comprising air gaps · CPC title

• H10W20/43

  Layouts of interconnections · CPC title

• H10W20/47

  comprising two or more dielectric layers having different properties, e.g. different dielectric constants · CPC title