Capacitor and airgap structure

Patent metadata

Field	Value
Publication number	US-12388006-B2
Application number	US-202217836251-A
Country	US
Kind code	B2
Filing date	Jun 9, 2022
Priority date	Jun 9, 2022
Publication date	Aug 12, 2025
Grant date	Aug 12, 2025

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to capacitor structures and methods of manufacture. The structure includes: an airgap provided within a dielectric material; an insulator material across a top of the airgap and on a surface of the dielectric material; and a capacitor provided within the dielectric material and lined with the insulator material.

First claim

What is claimed:

1. A structure comprising:
an airgap provided within a dielectric material;
an insulator material across a top of the airgap and on a surface of the dielectric material;
a capacitor provided within the dielectric material and lined with the insulator material; and
a U-shaped insulator material over a top plate of the capacitor, and a contact extending within the U-shaped insulator material to contact the top plate of the capacitor.

2. The structure of claim 1 , wherein the insulator material lines sidewalls of the airgap.

3. The structure of claim 1 , wherein the insulator material is over a liner material which is on the dielectric material.

4. The structure of claim 3 , wherein the capacitor extends through the liner material.

5. The structure of claim 3 , wherein a top surface of the capacitor is devoid of the liner material.

6. The structure of claim 3 , wherein the capacitor includes a bottom plate, a top plate and an insulator material between the top plate and the bottom plate, the bottom plate having a height extending above a surface of the liner material.

7. A structure comprising:
an airgap provided within a dielectric material;
an insulator material across a top of the airgap and on a surface of the dielectric material; and
a capacitor provided within the dielectric material and lined with the insulator material, wherein the capacitor comprises a bottom plate, a top plate and an insulator material between the top plate and the bottom plate, each of which are aligned with a trench in the dielectric material and which do not extend laterally over an upper surface of the insulator material.

8. The structure of claim 7 , further comprising a wiring structure within the dielectric material and a liner material over the wiring structure and under the insulator material.

9. The structure of claim 8 , wherein the bottom plate of the capacitor does not extend below the wiring structure.

10. The structure of claim 8 , wherein the bottom plate of the capacitor has a height that exceeds a combination of the wiring structure and the liner material.

11. The structure of claim 8 , wherein the bottom plate and the top plate of the capacitor do not extend laterally over the liner material.

12. A structure comprising:
an airgap structure within a dielectric material;
a wiring structure within the dielectric material;
a liner over the dielectric material and wiring structure; and
a capacitor within the dielectric material, the capacitor having a height greater than a combined height of the wiring structure and the liner; and
insulator material that lines and extends over the airgap structure.

13. The structure of claim 12 , wherein the insulator material is under the capacitor and extends onto a surface of the liner.

14. The structure of claim 12 , wherein the capacitor comprises a bottom plate, an insulator layer and a top plate, each of which has a surface planar with the insulator material.

15. The structure of claim 14 , wherein the capacitor has a height greater than a combined height of the wiring structure and the liner.

16. The structure of claim 12 , wherein a top surface of the capacitor is devoid of the liner.

17. The structure of claim 12 , wherein a bottom plate of the capacitor is at or above a bottom surface of the wiring structure.

Assignees

• Globalfoundries Sg Pte Ltd

Inventors

• Hsieh Chun-I
• KHOR Ee Jan
• Hsu Wei-Hui
• Yi Wanbing
• Tan Juan Boon

Classifications

• H10W20/081

  by forming openings in the dielectric parts · CPC title

• H10W20/072

  of dielectric parts comprising air gaps · CPC title

• H10W20/46

  comprising air gaps · CPC title

• H10W20/43

  Layouts of interconnections · CPC title

• H10W20/47

  comprising two or more dielectric layers having different properties, e.g. different dielectric constants · CPC title