Three terminal memory cells and method of making the same
US-12568631-B2 · Mar 3, 2026 · US
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Tan Juan Boon patents
Tan Juan Boon is listed as an inventor on 248 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Tan Juan Boon |
| Total patents | 248 |
| First publication | Jan 29, 2015 |
| Latest publication | Mar 3, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Layer stacks for a resistive memory element
US-12557563-B2 · Feb 17, 2026 · US
Structure for capacitor having defect-preventing regions in metal electrode
US-12550723-B2 · Feb 10, 2026 · US
Resistive random-access memory elements with lateral sidewall switching
US-12484234-B2 · Nov 25, 2025 · US
Capacitor and airgap structure
US-12388006-B2 · Aug 12, 2025 · US
Programmable interposer using RRAM platform
US-12284924-B2 · Apr 22, 2025 · US
Semiconductor devices and methods of forming the same
US-2025112149-A1 · Apr 3, 2025 · US
Method of forming a sensor device having moisture sensitive dielectric layer with integrally formed projections
US-12159848-B2 · Dec 3, 2024 · US
Resistive random-access memory elements with lateral sidewall switching
US-2024365566-A1 · Oct 31, 2024 · US
Semiconductor memory devices having an electrode with an extension
US-12102020-B2 · Sep 24, 2024 · US
Recent patents
Latest publications not already listed above.
Metal-insulator-metal capacitor (MIMCAP) and methods of forming the same
US-12094763-B2 · Sep 17, 2024 · US
Layer stacks for a resistive memory element
US-2024268241-A1 · Aug 8, 2024 · US
Three electrode capacitor structure using spaced conductive pillars
US-12034039-B2 · Jul 9, 2024 · US
Antifuse devices and methods of making thereof
US-2024203873-A1 · Jun 20, 2024 · US
SRAM bit cells with three-dimensional integration
US-12009326-B2 · Jun 11, 2024 · US
Memory devices and methods of forming the same
US-11978510-B2 · May 7, 2024 · US
Electronic fuse devices and integration methods
US-2024079319-A1 · Mar 7, 2024 · US
Method of forming a sensor device
US-2024063154-A1 · Feb 22, 2024 · US
Resistive memory devices with a cavity between electrodes
US-2024049611-A1 · Feb 8, 2024 · US
Structure for capacitor having defect-preventing regions in metal electrode
US-2024038653-A1 · Feb 1, 2024 · US
Method of forming a sensor device
US-11855019-B2 · Dec 26, 2023 · US
Memory devices and methods for fabricating memory devices
US-11856875-B2 · Dec 26, 2023 · US
Structure including discrete dielectric member for protecting first air gap during forming of second air gap
US-2023402317-A1 · Dec 14, 2023 · US
Capacitor and airgap structure
US-2023402365-A1 · Dec 14, 2023 · US
Resistive memory elements with an embedded heating electrode
US-11832538-B2 · Nov 28, 2023 · US
Memory devices and method of forming the same
US-11818969-B2 · Nov 14, 2023 · US
Galvanic isolation using isolation break between redistribution layer electrodes
US-2023361173-A1 · Nov 9, 2023 · US
Electronic device with galvanic isolation and integration methods
US-2023335580-A1 · Oct 19, 2023 · US
Galvanic isolation using isolation break between redistribution layer electrodes
US-11791379-B2 · Oct 17, 2023 · US
Three terminal memory cells and method of making the same
US-2023320104-A1 · Oct 5, 2023 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Globalfoundries Sg Pte Ltd | 241 |
| Globalfoundries Us Inc | 3 |
| Globalfoundries Inc | 3 |
| Zhang Fan | 2 |
| Tan Juan Boon | 2 |
Top CPC classifications
Most common classification codes across this inventor's patents.