Method of forming internal spacer for nanowires
US-10153341-B2 · Dec 11, 2018 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L29/66 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 172 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 18 |
| 2016 | 24 |
| 2017 | 17 |
| 2018 | 13 |
| 2019 | 29 |
| 2020 | 23 |
| 2021 | 24 |
| 2022 | 11 |
| 2023 | 7 |
| 2024 | 6 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Etching liquid for oxide containing zinc and tin, and etching method
US-9824899-B2 · Nov 21, 2017 · US
Manufacturing method of a graphene-based electrochemical sensor, and electrochemical sensor
US-9797860-B2 · Oct 24, 2017 · US
Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction and semiconductor device having reduced junction leakage
US-9793272-B2 · Oct 17, 2017 · US
Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction
US-9786661-B2 · Oct 10, 2017 · US
Organic Light Emitting Diode Substrate And Method For Manufacturing The Same
US-2017279047-A1 · Sep 28, 2017 · US
Method to controllably etch silicon recess for ultra shallow junctions
US-9773907-B2 · Sep 26, 2017 · US
Carbon nanostructure device fabrication utilizing protect layers
US-9768288-B2 · Sep 19, 2017 · US
Method to controllably etch silicon recess for ultra shallow junctions
US-9735272-B2 · Aug 15, 2017 · US
Applications for nanopillar structures
US-9716141-B2 · Jul 25, 2017 · US
Transient devices designed to undergo programmable transformations
US-9691873-B2 · Jun 27, 2017 · US
Methods of forming defect-free SRB onto lattice-mismatched substrates and defect-free fins on insulators
US-9691860-B2 · Jun 27, 2017 · US
Nanoscale chemical templating with oxygen reactive materials
US-9647063-B2 · May 9, 2017 · US
Metal gate structure and method of formation
US-9608086-B2 · Mar 28, 2017 · US
Nanowire FET with tensile channel stressor
US-9601576-B2 · Mar 21, 2017 · US
Semiconductor device and method of forming semiconductor die with active region responsive to external stimulus
US-9553162-B2 · Jan 24, 2017 · US
Dual fill silicon-on-nothing field effect transistor
US-9548358-B2 · Jan 17, 2017 · US
Preventing over-polishing of poly gate in metal-gate CMP
US-9543212-B2 · Jan 10, 2017 · US
Semiconductor device including gate channel having adjusted threshold voltage
US-9530699-B2 · Dec 27, 2016 · US
Semiconductor device including a wall oxide film and method for forming the same
US-9530840-B2 · Dec 27, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L29/66?
- CPC H01L29/66 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L29/66 (Electricity)?
- Our database includes 172 publications tagged with this CPC code.
- Is patent activity under CPC H01L29/66 growing?
- Publication counts under this code: 7 in 2023 vs 6 in 2024 (latest complete years).