Etching liquid for oxide containing zinc and tin, and etching method

Patent metadata

Field	Value
Publication number	US-9824899-B2
Application number	US-201415107672-A
Country	US
Kind code	B2
Filing date	Dec 16, 2014
Priority date	Jan 7, 2014
Publication date	Nov 21, 2017
Grant date	Nov 21, 2017

Abstract

The present invention provides an etching liquid which has a suitable etching rate for etching of an oxide containing zinc and tin and is suppressed in change of the etching rate due to dissolution of the oxide, while being free from the generation of a precipitate. The corrosiveness of this etching liquid to wiring materials is low enough to be ignored, and this etching liquid has excellent linearity of a pattern shape. The present invention uses an etching liquid which contains (A) one or more substances selected from the group consisting of sulfuric acid, nitric acid, hydrochloric acid, methanesulfonic acid, perchloric acid and salts of these acids, and (B) oxalic acid or a salt thereof and water, and which has a pH of from −1 to 1.

First claim

The invention claimed is:

1. An etching liquid for etching an oxide containing at least zinc and tin, the etching liquid comprising:
(A) one or more selected from the group consisting of sulfuric acid, nitric acid, methanesulfonic acid, hydrochloric acid, perchloric acid or salts thereof; (B) oxalic acid or a salt thereof and water, and (E) zinc at a concentration in a range of 10-5000 mass ppm, wherein the pH value is −1 to 1.

2. The etching liquid according to claim 1 , further comprising (C) carboxylic acid (other than oxalic acid).

3. The etching liquid according to claim 2 , wherein (C) carboxylic acid is one or more selected from the group consisting of acetic acid, glycolic acid, malonic acid, maleic acid, succinic acid, malic acid, tartaric acid, glycine and citric acid.

4. The etching liquid according to Claim 1 , further comprising a (D) polysulfonic acid compound.

5. The etching liquid according to claim 4 , wherein the (D) polysulfonic acid compound is one or more selected from the group consisting of a naphthalene sulfonate formalin condensate and a salt thereof, polyoxyethylene alkyl ether sulfate, and polyoxyethylene alkyl phenyl ether sulfate.

6. The etching liquid according to claim 1 , wherein a taper angle of an etched pattern is 10°-80°.

7. A method for etching an oxide containing at least zinc and tin, comprising bringing an etching liquid comprising (A) 0.5-30% by mass of one or more selected from the group consisting of sulfuric acid, nitric acid, methanesulfonic acid, hydrochloric acid, perchloric acid or a salt thereof, (B) 0.1-10% by mass of oxalic acid or a salt thereof and water (remainder), and (E) zinc at a concentration in a range of 10-5000 mass ppm, where pH value is −1 to 1, into contact with a substrate comprising the oxide containing at least zinc and tin.

8. The etching method according to claim 7 , wherein the etching liquid further comprises 0.1-15% by mass of (C) carboxylic acid (other than oxalic acid).

9. The etching method according to claim 7 , wherein the etching liquid further comprises 0.0001-10% by mass of a (D) polysulfonic acid compound.

10. The etching method according to claim 7 , wherein a taper angle of an etched pattern is 10°-80°.

11. A display device produced by the method according to claim 7 .

Assignees

• Mitsubishi Gas Chemical Co

Inventors

• SHIGETA Mari
• Yube Kunio

Classifications

• H10P50/667

  by liquid etching only · CPC title

• H10P50/282

  of inorganic materials · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/3426

  Oxides · CPC title

• H10P95/70

  Chemical treatments · CPC title