Phase change memory with reduced programming current
US-12557565-B2 · Feb 17, 2026 · US
This page is not indexed by search engines while we improve data quality.
Liu Zuoguang patents
Liu Zuoguang is listed as an inventor on 280 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Liu Zuoguang |
| Total patents | 280 |
| First publication | Jul 2, 2015 |
| Latest publication | Feb 17, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Self-aligned, symmetric phase change memory element
US-12550629-B2 · Feb 10, 2026 · US
Phase change memory with conductive rings
US-12219884-B2 · Feb 4, 2025 · US
Reducing contact resistance of phase change memory bridge cell
US-12219885-B2 · Feb 4, 2025 · US
Phase change memory with reduced programming current
US-2023284543-A1 · Sep 7, 2023 · US
Layout design for threshold voltage tuning
US-11694958-B2 · Jul 4, 2023 · US
Self-aligned, symmetric phase change memory element
US-2023189668-A1 · Jun 15, 2023 · US
Stacked nanosheet devices with matched threshold voltages for nfet/pfet
US-2023163127-A1 · May 25, 2023 · US
Reducing contact resistance of phase change memory bridge cell
US-2023165170-A1 · May 25, 2023 · US
Low resistance source drain contact formation with trench metastable alloys and laser annealing
US-11562906-B2 · Jan 24, 2023 · US
Recent patents
Latest publications not already listed above.
Phase change memory cell resistive liner
US-11545624-B2 · Jan 3, 2023 · US
Phase change memory with conductive rings
US-2022416157-A1 · Dec 29, 2022 · US
Phase change memory cell resistive liner
US-2022310913-A1 · Sep 29, 2022 · US
Layout Design for Threshold Voltage Tuning
US-2021384139-A1 · Dec 9, 2021 · US
Two-stage top source drain epitaxy formation for vertical field effect transistors enabling gate last formation
US-11164787-B2 · Nov 2, 2021 · US
Germanium-based laser diode
US-2021249845-A1 · Aug 12, 2021 · US
Self-aligned gate and junction for VTFET
US-11075280-B2 · Jul 27, 2021 · US
Shared contact trench comprising dual silicide layers and dual epitaxial layers for source/drain layers of NFET and PFET devices
US-11062960-B2 · Jul 13, 2021 · US
Two-stage top source drain epitaxy formation for vertical field effect transistors enabling gate last formation
US-2021193527-A1 · Jun 24, 2021 · US
Composite spacer enabling uniform doping in recessed fin devices
US-11038041-B2 · Jun 15, 2021 · US
Measurement of top contact resistance in vertical field-effect transistor devices
US-11024738-B2 · Jun 1, 2021 · US
Vertical field effect transistor replacement metal gate fabrication
US-10985073-B2 · Apr 20, 2021 · US
VFET device design for top contact resistance measurement
US-10957605-B2 · Mar 23, 2021 · US
Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gap
US-10950492-B2 · Mar 16, 2021 · US
Dual silicide liner flow for enabling low contact resistance
US-10916471-B2 · Feb 9, 2021 · US
Vertical field effect transistor replacement metal gate fabrication
US-2021013106-A1 · Jan 14, 2021 · US
Composite spacer enabling uniform doping in recessed fin devices
US-10854733-B2 · Dec 1, 2020 · US
Self-Aligned Gate and Junction for VTFET
US-2020335601-A1 · Oct 22, 2020 · US
Fin field effect transistor fabrication and devices having inverted T-shaped gate
US-10784365-B2 · Sep 22, 2020 · US
Measurement of top contact resistance in vertical field-effect transistor devices
US-2020295175-A1 · Sep 17, 2020 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| IBM | 274 |
| Globalfoundries Inc | 14 |
| Tessera Inc | 2 |
| Globalfoundries Inc | 2 |
| Elpis Tech Inc | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D84/038 | 182 |
| H10D30/024 | 162 |
| H01L29/66795 | 115 |
| H10D64/017 | 110 |
| H10D62/151 | 109 |