Phase change memory with conductive rings

Patent metadata

Field	Value
Publication number	US-12219884-B2
Application number	US-202117449515-A
Country	US
Kind code	B2
Filing date	Sep 30, 2021
Priority date	Jun 25, 2021
Publication date	Feb 4, 2025
Grant date	Feb 4, 2025

Abstract

A phase change memory, system, and method for gradually changing the conductance and resistance of the phase change memory while preventing resistance drift. The phase change memory may include a phase change material. The phase change memory may also include a bottom electrode. The phase change memory may also include a heater core proximately connected to the bottom electrode. The phase change memory may also include a set of conductive rings surrounding the heater core, where the set of conductive rings comprises one or more conductive rings, and where the set of conductive rings are proximately connected to the phase change material. The phase change memory may also include a set of spacers, where a spacer, from the set of spacers, separates a portion of a conductive ring, from the set of conductive rings, from the heater core.

First claim

What is claimed is:

1. A phase change memory comprising: a phase change material; a bottom electrode; a heater core proximately connected to the bottom electrode; a set of conductive rings surrounding the heater core, wherein the set of conductive rings comprises one or more conductive rings, and wherein the set of conductive rings are proximately connected to the phase change material; and a set of spacers, wherein a spacer, from the set of spacers, separates a portion of a conductive ring, from the set of conductive rings, from the heater core, wherein the set of conductive rings comprises a first conductive ring and a second conductive ring, and wherein the first conductive ring has a different thickness than the second conductive ring in a plan view of uppermost surfaces on the set of conductive rings.

2. The phase change memory of claim 1 , wherein:
the set of conductive rings comprises at least an inward conductive ring and an outward conductive ring, with the inward conductive ring closest to the heater core and the outward conductive ring farthest from the heater core;
the inward conductive ring has a lowest resistivity of the set of conductive rings; and
the outward conductive ring has a highest resistivity of the set of conductive rings.

3. The phase change memory of claim 2 , wherein the inward conductive ring has a first thickness that is thicker than a second thickness of the outward conductive ring.

4. The phase change memory of claim 3 , wherein the inward conductive ring has a different height than the outward conductive ring.

5. The phase change memory of claim 1 , wherein:
at least some conductive rings in the set of conductive rings are proximately connected to sidewalls of the spacers in the set of spacers, and wherein a portion of one conductive ring in the set of conductive rings is in direct contact with another portion of another conductive ring in the set of conductive rings.

6. The phase change memory of claim 1 , wherein the at least some conductive rings in the set of conductive rings have sidewalls non-parallel to the heater core.

7. The phase change memory of claim 1 , wherein:
the set of conductive rings comprises a first conductive ring, a second conductive ring, and a third conductive ring;
the set of spacers comprises a first spacer and a second spacer;
the first spacer separates a portion of the first conductive ring from a portion of the second conductive ring; and
the second spacer separates a portion of the second conductive ring from a portion of the third conductive ring.

8. The phase change memory of claim 1 , wherein at least some conductive rings in the set of conductive rings have sidewalls parallel to the heater core.

9. The phase change memory of claim 1 , further comprising a heater, wherein the heater comprises the heater core and one or more conductive rings from the set of conductive rings.

10. The phase change memory of claim 1 , wherein the heater core has a lower resistivity than the set of conductive rings.

11. The phase change memory of claim 1 , wherein a conductive ring in the set of conductive rings comprise at least one of TaN, TiN, and TaC, wherein resistance of the conductive ring is higher than resistance of the phase change memory in a crystalline state and lower than resistance of the phase change memory in an amorphous state.

12. The phase change memory of claim 1 , wherein a spacer in the set of spacers comprises SiN and another spacer in the set of spacers comprises SiO 2 .

13. The phase change memory of claim 1 , wherein the set of conductive rings surrounding the heater core comprises a first conductive ring and a second conductive ring, wherein the first conductive ring has a different composition than the second conductive ring, wherein the set of spacers comprises a first spacer and a second spacer, and wherein the first spacer has a different composition than the second spacer.

14. The phase change memory of claim 1 , further comprising a top electrode proximately connected to the phase change material, wherein the bottom electrode is smaller than the top electrode.

15. A system comprising: a phase change memory, the phase change memory comprising: a phase change material; a bottom electrode; a heater core proximately connected to the bottom electrode; a set of conductive rings surrounding the heater core, wherein the set of conductive rings comprises one or more conductive rings, and wherein the set of conductive rings are proximately connected to the phase change material; and a set of spacers, wherein a spacer, from the set of spacers, separates a portion of a conductive ring, from the set of conductive rings, from the heater core, wherein at least some conductive rings in the set of conductive rings are proximately connected to the bottom electrode, wherein the set of conductive rings comprises a first conductive ring and a second conductive ring, and wherein the first conductive ring has a different thickness than the second conductive ring in a plan view of uppermost surfaces on the set of conductive rings.

16. The system of claim 15 , wherein the phase change material is configurable to maintain at least three states comprising an amorphous state, a crystalline state and an intermediate state comprising a partially amorphous state and a partially crystalline state.

17. A method of using the system of claim 16 , comprising steps of:
applying a first signal to the system to program the phase change material to the amorphous state;
applying a second signal to the system to program the phase change material to the crystalline state; and
applying a third signal to the system to program the phase change material to the intermediate state.

18. A phase change memory comprising:
a phase change material;
a bottom electrode;
an insulator core;
a heater proximately connected to the bottom electrode, wherein the heater comprises a set of conductive rings surrounding the insulator core, wherein the set of conductive rings comprises a plurality of conductive rings, and wherein the set of conductive rings are proximately connected to the phase change material; and
a set of spacers, wherein a spacer, from the set of spacers, separates a portion of a conductive ring, from the set of conductive rings, from the insulator core, wherein each conductive ring in the set of conductive rings is exposed to the bottom electrode through a conductive stud.

Assignees

• IBM

Inventors

• Cheng Kangguo
• Radens Carl
• Li Juntao
• Xie Ruilong
• Adusumilli Praneet
• Van Der Straten Oscar
• Reznicek Alexander
• Liu Zuoguang
• Gasasira Arthur

Classifications

• H10N70/8828 Primary

  Tellurides, e.g. GeSbTe · CPC title

• H10N70/841

  Electrodes · CPC title

• H10N70/826

  adapted for essentially vertical current flow, e.g. sandwich or pillar type devices · CPC title

• H10N70/021

  Formation of switching materials, e.g. deposition of layers · CPC title

• H10N70/231 Primary

  based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect · CPC title