Phase change memory cell resistive liner

Patent metadata

Field	Value
Publication number	US-11545624-B2
Application number	US-202117215278-A
Country	US
Kind code	B2
Filing date	Mar 29, 2021
Priority date	Mar 29, 2021
Publication date	Jan 3, 2023
Grant date	Jan 3, 2023

Abstract

A phase change memory (PCM) cell includes a first electrode, a heater electrically connected to the first electrode, a PCM material electrically connected to the heater, a second electrode electrically connected to the PCM material, and a resistive liner in direct contact with and electrically connected to a sidewall of the heater and to the PCM material.

First claim

What is claimed is:

1. A phase change memory (PCM) cell comprising:
a first electrode;
a heater electrically connected to the first electrode;
a PCM material electrically connected to the heater;
a second electrode electrically connected to the PCM material; and
a resistive liner in direct contact with and electrically connected to a sidewall of the heater and to the PCM material.

2. The PCM cell of claim 1 , wherein the PCM material is in direct contact with an end of the heater.

3. The PCM cell of claim 2 , further comprising:
an electrical insulating spacer in direct contact with the sidewall of the heater and with a portion of the resistive liner such that the resistive liner is only in direct contact with the PCM material at an outer end of the resistive liner opposite of the heater.

4. The PCM cell of claim 1 , further comprising:
an electrical insulating layer between and in direct contact with the first electrode and the resistive liner.

5. The PCM cell of claim 4 , wherein a width of the PCM material is three to seven times a width of the heater.

6. A method of manufacturing a phase change memory (PCM) cell, the method comprising:
forming a first electrode;
forming a first electrical insulating layer on the first electrode;
forming a resistive liner on the first electrical insulating layer;
forming a heater that extends from the first electrode and through the first electrical insulating layer and the resistive liner;
forming a PCM material on the heater and the resistive liner; and
forming a second electrode on the PCM material.

7. The method of claim 6 , further comprising:
forming a second electrical insulating layer on the resistive liner;
wherein the heater extends through the second electrical insulating layer.

8. The method of claim 7 , further comprising:
removing the second electrical insulating layer after forming the heater.

9. The method of claim 8 , further comprising:
removing a portion of the resistive liner to expose a portion of the first electrical insulating layer.

10. The method of claim 9 , further comprising:
forming a dielectric spacer on the resistive liner around the heater prior to removing the portion of the resistive liner.

11. A phase change memory (PCM) cell comprising:
a first electrode;
a heater in direct contact with and electrically connected to the first electrode;
a PCM material in direct contact with and electrically connected to the heater;
a second electrode in direct contact with and electrically connected to the PCM material; and
a first resistive liner in direct contact with and electrically connected to the heater and to the PCM material.

12. The PCM cell of claim 11 , further comprising:
a dielectric spacer surrounding the heater and on a portion of the first resistive liner such that the heater is only in direct contact with the PCM material at an end of the heater opposite of the first electrode, and the first resistive liner is only in direct contact with the PCM material at an outer end of the first resistive liner opposite of the heater.

13. The PCM cell of claim 11 , further comprising:
an electrical insulating layer between and in direct contact with the first electrode and the first resistive liner.

14. The PCM cell of claim 11 , further comprising:
a second resistive liner in direct contact with and electrically connected to the heater and to the PCM material, wherein the second resistive liner is spaced apart from the first resistive liner.

15. The PCM cell of claim 14 , further comprising:
an electrical insulating layer between the first resistive liner and the second resistive liner.

16. A phase change memory (PCM) cell comprising:
a first electrode;
a heater electrically connected to the first electrode;
a PCM material electrically connected to the heater;
a second electrode electrically connected to the PCM material; and
a resistive liner in direct contact with and electrically connected to a sidewall of the heater, wherein the resistive liner has an L-shaped cross-section with a first leg extending along the sidewall of the heater and a second leg extending outward from the heater.

17. The PCM cell of claim 16 , further comprising:
a dielectric spacer positioned over a portion of the resistive liner such that the resistive liner is only in direct contact with the PCM material at a first end of the first leg and a second end of the second leg.

18. The PCM cell of claim 16 , further comprising:
an electrical insulating layer between and in direct contact with the first electrode and the resistive liner.

19. The PCM cell of claim 16 , wherein the resistive liner further comprises:
a third leg extending outward from the heater and spaced apart from the second leg.

20. The PCM cell of claim 19 , further comprising:
an electrical insulating layer between the second leg and the third leg.

21. A method of manufacturing a phase change memory (PCM) cell, the method comprising:
forming a first electrode;
forming a first electrical insulating layer on the first electrode;
forming a heater that extends from the first electrode and through the first electrical insulating layer;
forming a resistive liner on the first electrical insulating layer and on a portion of the heater such that a portion of the heater is not covered by the resistive liner;
forming a PCM material on the heater and the resistive liner; and
forming a second electrode on the PCM material.

22. The method of claim 21 , wherein forming the resistive liner comprises:
forming the resistive liner over the heater; and
removing a portion of the resistive liner to expose a portion of the heater.

23. The method of claim 21 , further comprising:
removing a portion of the resistive liner to expose a portion of the first electrical insulating layer.

24. The method of claim 23 , further comprising:
forming a dielectric spacer on the resistive liner around the heater prior to removing the portion of the resistive liner.

25. The method of claim 21 , further comprising:
forming a second electrical insulating layer on the first electrical insulating layer prior to forming the heater.

Assignees

• IBM

Inventors

• Cheng Kangguo
• Liu Zuoguang
• Li Juntao
• Xie Ruilong

Classifications

• H01L45/1233

  Electricity · mapped topic

• H01L45/06

  Electricity · mapped topic

• H01L45/126 Primary

  Electricity · mapped topic

• H01L45/16

  Electricity · mapped topic

• H10N70/8413 Primary

  adapted for resistive heating · CPC title