Reducing contact resistance of phase change memory bridge cell

Patent metadata

Field	Value
Publication number	US-12219885-B2
Application number	US-202117531149-A
Country	US
Kind code	B2
Filing date	Nov 19, 2021
Priority date	Nov 19, 2021
Publication date	Feb 4, 2025
Grant date	Feb 4, 2025

Abstract

A phase change memory includes a substrate, a plurality of first phase change elements on the substrate, a plurality of electrodes on the plurality of first phase change elements, and a second phase change element connecting the plurality of electrodes and disposed between the plurality of first phase change elements.

First claim

What is claimed is:

1. A phase change memory comprising:
a substrate;
a plurality of first phase change elements on the substrate;
a plurality of electrodes on the plurality of first phase change elements; and
a second phase change element connecting the plurality of electrodes and disposed between the plurality of first phase change elements, wherein:
the plurality of first phase change elements on the substrate and the plurality of electrodes on the plurality of the first phase change elements form a first trench;
the second phase change element is a layer disposed on sidewalls of the first trench; and
the second phase change element forms a second trench.

2. The phase change memory of claim 1 , wherein the second phase change element has a first contact resistance with the plurality of electrodes and the plurality of first phase change elements have a second contact resistance with the plurality of electrodes, wherein the first contact resistance is less than the second contact resistance.

3. The phase change memory of claim 1 , wherein the plurality of first phase change elements are an undoped germanium-antimony-tellurium material and the second phase change element is a doped germanium-antimony-tellurium material.

4. The phase change memory of claim 1 , wherein the plurality of electrodes are titanium nitride electrodes.

5. The phase change memory of claim 1 , further comprising a first resistive liner between the second phase change element and the plurality of electrodes, the plurality of first phase change elements, and the substrate.

6. The phase change memory of claim 5 , wherein the first resistive liner is one of a tantalum carbide material, a titanium nitride material, and a tantalum nitride material.

7. The phase change memory of claim 1 , wherein the second phase change element is a bridge between the plurality of electrodes.

8. The phase change memory of claim 1 , further comprising a dielectric encapsulation on the second phase change element, wherein the dielectric encapsulation fills the second trench formed by the second phase change element.

9. The phase change memory of claim 8 , further comprising a second resistive liner between the second phase change element and the dielectric encapsulation.

10. The phase change memory of claim 1 , further comprising a third resistive liner between the second phase change element and the substrate and between the plurality of first phase change elements and the substrate.

11. The phase change memory of claim 1 , wherein the phase change memory further comprising a vertical spacer on sidewalls of the first trench.

12. The phase change memory of claim 11 , further comprising a fourth resistive liner on the substrate and between the vertical spacer and the second phase change element.

13. The phase change memory of claim 11 , further comprising a fifth resistive liner on the substrate and between on the sidewalls of the first trench and the vertical spacer.

14. The phase change memory of claim 11 , wherein the second phase change element is a layer disposed on sidewalls of the first trench, the phase change memory further comprising:
a dielectric encapsulation in the second trench formed by the second phase change element; and
a sixth resistive liner between the second phase change element and the dielectric encapsulation.

15. The phase change memory of claim 11 , further comprising a seventh resistive liner on the substrate below the plurality of first phase change elements, the vertical spacer, and the second phase change element.

16. A method of manufacturing a phase change memory comprising:
providing a substrate;
depositing a first phase change material on the substrate;
depositing an electrode material on the first phase change material;
forming a first trench by patterning the electrode material and the first phase change material, wherein the first trench divides the electrode material into a first electrode and a second electrode;
forming a bridge in the first trench between the first electrode and the second electrode by depositing a second phase change material, different than the first phase change material, wherein the second phase change material is a layer disposed on sidewalls of the first trench and the second phase change material forms a second trench; and
forming a dielectric encapsulation on the second phase change material, wherein the dielectric encapsulation fills the second trench.

17. The method of manufacturing a phase change memory of claim 16 , further comprising planarizing the second phase change material and the dielectric encapsulation.

18. The method of manufacturing a phase change memory of claim 16 , further comprising forming a resistive liner, wherein the resistive liner is formed in the first trench under the second phase change material, between the second phase change material and the dielectric encapsulation, or directly on the substrate under the first phase change material and the second phase change material.

19. The method of manufacturing a phase change memory of claim 16 , further comprising forming a vertical spacer in the first trench before depositing a second phase change material.

20. A phase change memory comprising:
a substrate;
a plurality of first phase change elements on the substrate;
a plurality of electrodes on the plurality of first phase change elements; and
a second phase change element connecting the plurality of electrodes and disposed between the plurality of first phase change elements;
wherein the plurality of first phase change elements on the substrate and the plurality of electrodes on the plurality of first phase change elements form a first trench, and the second phase change element is a layer disposed on sidewalls of the first trench, and a dielectric encapsulation fills a second trench formed by the second phase change element.

Assignees

• IBM

Inventors

• Cheng Kangguo
• Li Juntao
• Liu Zuoguang
• Gasasira Arthur

Classifications

• H10B63/10

  Phase change RAM [PCRAM, PRAM] devices · CPC title

• H10N70/8828

  Tellurides, e.g. GeSbTe · CPC title

• H10N70/841

  Electrodes · CPC title

• H10N70/823

  adapted for essentially horizontal current flow, e.g. bridge type devices · CPC title

• H10N70/021

  Formation of switching materials, e.g. deposition of layers · CPC title