Bilayer memory stacking with lines shared between bottom and top memory layers
US-12599032-B2 · Apr 7, 2026 · US
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Sato Noriyuki patents
Sato Noriyuki is listed as an inventor on 196 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Sato Noriyuki |
| Total patents | 196 |
| First publication | Oct 3, 2019 |
| Latest publication | Apr 7, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Method of fabricating transistors and stacked non-planar capacitors for memory and logic applications
US-12593456-B1 · Mar 31, 2026 · US
Integrated thermoelectric device to mitigate integrated circuit hot spots
US-12581857-B2 · Mar 17, 2026 · US
Non-linear polar material based multi-capacitor bit-cell with shared gain element with series transistor and individual access transistor
US-12562204-B2 · Feb 24, 2026 · US
Memory device fabrication through wafer bonding
US-12563737-B1 · Feb 24, 2026 · US
Integration process for fabricating embedded memory
US-12525543-B1 · Jan 13, 2026 · US
Subtractively patterned interconnect structures for integrated circuits
US-12482744-B2 · Nov 25, 2025 · US
Method of forming capacitors through wafer bonding
US-12464730-B2 · Nov 4, 2025 · US
Integrating embedded memory with logic interconnects
US-12463142-B1 · Nov 4, 2025 · US
Method of integrating a capacitor including a non-linear polar material with a transistor through wafer bonding
US-12446231-B1 · Oct 14, 2025 · US
Recent patents
Latest publications not already listed above.
Gate coupled non-linear polar material based capacitors for memory and logic
US-12439606-B1 · Oct 7, 2025 · US
Method of fabricating memory devices using pocket integration
US-12414306-B2 · Sep 9, 2025 · US
Methods of fabricating planar capacitors on a shared plate electrode
US-12376312-B1 · Jul 29, 2025 · US
Passivation layers for thin film transistors
US-12376342-B2 · Jul 29, 2025 · US
Capacitor devices with shared electrode and methods of fabrication
US-12369326-B1 · Jul 22, 2025 · US
Apparatus and method to improve sensing noise margin in a non-linear polar material based bit-cell
US-12347476-B1 · Jul 1, 2025 · US
Drain coupled non-linear polar material based capacitors for memory and logic
US-12349365-B2 · Jul 1, 2025 · US
Methods of fabricating trench capacitors on a shared plate electrode
US-12336184-B1 · Jun 17, 2025 · US
Non-linear polar material based multi-capacitor high density bit-cell
US-12334127-B2 · Jun 17, 2025 · US
Integration of 2T-NC for memory and logic applications
US-12328878-B1 · Jun 10, 2025 · US
Stacked capacitors with shared electrodes and methods of fabrication
US-12324162-B1 · Jun 3, 2025 · US
Planar capacitors with shared electrode and methods of fabrication
US-12324163-B1 · Jun 3, 2025 · US
Memory array with buried or backside word-line
US-12300297-B1 · May 13, 2025 · US
Method of fabricating transistors and stacked planar capacitors for memory and logic applications
US-12289894-B1 · Apr 29, 2025 · US
Capacitor integrated with a transistor for logic and memory applications
US-12274071-B1 · Apr 8, 2025 · US
High density ferroelectric random access memory (FeRAM) devices and methods of fabrication
US-12262543-B1 · Mar 25, 2025 · US
Trench capacitors with shared electrode
US-12262541-B1 · Mar 25, 2025 · US
Embedded memory adjacent to non-memory
US-12238935-B1 · Feb 25, 2025 · US
Non-linear polar material based multi-capacitor bit-cell with shared gain element and access transistor
US-2025022500-A1 · Jan 16, 2025 · US
Non-linear polar material based multi-capacitor bit-cell with multi-way sharing of gain element with series transistor
US-2025014621-A1 · Jan 9, 2025 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Kepler Computing Inc | 118 |
| Intel Corp | 78 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10B53/30 | 110 |
| G11C11/221 | 82 |
| H10D1/682 | 81 |
| H10N50/10 | 56 |
| H10B61/22 | 52 |