Field effect transistors having ferroelectric or antiferroelectric gate dielectric structure
US-11735652-B2 · Aug 22, 2023 · US
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Morris Daniel H patents
Morris Daniel H is listed as an inventor on 66 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Morris Daniel H |
| Total patents | 66 |
| First publication | Nov 8, 2016 |
| Latest publication | Aug 22, 2023 |
Notable patents
Publications ranked by popularity score, then publication date.
Low overhead, high bandwidth re-configurable interconnect apparatus and method
US-11734174-B2 · Aug 22, 2023 · US
Metal insulator transition field programmable routing block
US-11522130-B2 · Dec 6, 2022 · US
Memory cell with a ferroelectric capacitor integrated with a transtor gate
US-11502103-B2 · Nov 15, 2022 · US
Logic-embedded diode/tunnel diode coupled to floating gate with I-V characteristics suitable for logic state retention
US-11495596-B2 · Nov 8, 2022 · US
One transistor and one ferroelectric capacitor memory cells in diagonal arrangements
US-11450675-B2 · Sep 20, 2022 · US
Anti-ferroelectric capacitor memory cell
US-2022231035-A1 · Jul 21, 2022 · US
Vertical backend transistor with ferroelectric material
US-11355505-B2 · Jun 7, 2022 · US
Anti-ferroelectric capacitor memory cell
US-11355504-B2 · Jun 7, 2022 · US
Polarization gate stack SRAM
US-11232832-B2 · Jan 25, 2022 · US
Recent patents
Latest publications not already listed above.
Memory devices based on capacitors with built-in electric field
US-11171145-B2 · Nov 9, 2021 · US
Imprint-free write driver for ferroelectric memory
US-11037614-B2 · Jun 15, 2021 · US
Memory field-effect transistors and methods of manufacturing the same
US-11004868-B2 · May 11, 2021 · US
One transistor and ferroelectric FET based memory cell
US-10998339-B2 · May 4, 2021 · US
Low overhead, high bandwidth re-configurable interconnect apparatus and method
US-2021089448-A1 · Mar 25, 2021 · US
Configurable interconnect apparatus and method
US-10901486-B2 · Jan 26, 2021 · US
Polarization gate stack sram
US-2021020233-A1 · Jan 21, 2021 · US
Vertical memory control circuitry located in interconnect layers
US-10886286-B2 · Jan 5, 2021 · US
Polarization gate stack SRAM
US-10832761-B2 · Nov 10, 2020 · US
Field effect transistors having ferroelectric or antiferroelectric gate dielectric structure
US-2020321446-A1 · Oct 8, 2020 · US
Save-restore circuitry with metal-ferroelectric-metal devices
US-10777250-B2 · Sep 15, 2020 · US
Nonvolatile SRAM
US-10748602-B2 · Aug 18, 2020 · US
Transistor threshold voltage variation optimization
US-10734378-B2 · Aug 4, 2020 · US
Vertical backend transistor with ferroelectric material
US-2020235110-A1 · Jul 23, 2020 · US
Memory array with ferroelectric elements
US-10720438-B2 · Jul 21, 2020 · US
Transistor with dynamic threshold voltage for low-leakage standby and high speed active mode
US-10720504-B2 · Jul 21, 2020 · US
Tunnel field-effect transistor (TFET) based high-density and low-power sequential
US-10707846-B2 · Jul 7, 2020 · US
Three-dimensional ferroelectric NOR-type memory
US-10651182-B2 · May 12, 2020 · US
Polarization gate stack sram
US-2020118616-A1 · Apr 16, 2020 · US
Logic-embedded diode/tunnel diode coupled to floating gate with i-v characteristics suitable for logic state retention
US-2020105743-A1 · Apr 2, 2020 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Intel Corp | 66 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| G11C11/221 | 20 |
| G11C11/2275 | 16 |
| G11C11/223 | 14 |
| G11C11/2273 | 14 |
| H10D64/689 | 12 |