Field-effect transistor (FET) with self-aligned ferroelectric capacitor and methods of fabrication
US-12166122-B2 · Dec 10, 2024 · US
having ferroelectric layers
having ferroelectric layers · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D64/689 |
| Official title | {having ferroelectric layers} |
| Display label | having ferroelectric layers |
| Total patents | 2,444 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 27 |
| 2016 | 54 |
| 2017 | 52 |
| 2018 | 89 |
| 2019 | 159 |
| 2020 | 221 |
| 2021 | 289 |
| 2022 | 335 |
| 2023 | 393 |
| 2024 | 425 |
| 2025 | 325 |
| 2026 | 75 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Continuous gate and fin spacer for advanced integrated circuit structure fabrication
US-2024038578-A1 · Feb 1, 2024 · US
Ferroelectric finfet
US-2016358915-A1 · Dec 8, 2016 · US
Semiconductor device and transistor
US-2016336312-A1 · Nov 17, 2016 · US
Field effect semiconductor component and methods for operating and producing it
US-9496364-B2 · Nov 15, 2016 · US
Semiconductor device
US-2016308070-A1 · Oct 20, 2016 · US
Tunnel MOSFET with Ferroelectric Gate Stack
US-2016308021-A1 · Oct 20, 2016 · US
Method of forming a device including a floating gate electrode and a layer of ferroelectric material
US-2016268271-A1 · Sep 15, 2016 · US
Ferroelectric finfet
US-2016260714-A1 · Sep 8, 2016 · US
Method of forming a semiconductor structure including a ferroelectric material and semiconductor structure including a ferroelectric transistor
US-9412600-B2 · Aug 9, 2016 · US
Methods for producing a thin film ferroelectric device using a two-step temperature process
US-2016225775-A1 · Aug 4, 2016 · US
Vertical Ferroelectric Field Effect Transistor Constructions, Constructions Comprising A Pair Of Vertical Ferroelectric Field Effect Transistors, Vertical Strings Of Ferroelectric Field Effect Transistors, And Vertical Strings Of Laterally Opposing Pairs Of Vertical Ferroelectric Field Effect Transistors
US-2016225860-A1 · Aug 4, 2016 · US
Tunnel MOSFET with ferroelectric gate stack
US-9391162-B2 · Jul 12, 2016 · US
Methods for Forming Ferroelectric Phases in Materials and Devices Utilizing the Same
US-2016181091-A1 · Jun 23, 2016 · US
Vertical ferroelectric memory device and a method for manufacturing thereof
US-2016181259-A1 · Jun 23, 2016 · US
Integrated circuitry components, switches, and memory cells
US-9368581-B2 · Jun 14, 2016 · US
Semiconductor structure including a ferroelectric transistor and method for the formation thereof
US-2016163821-A1 · Jun 9, 2016 · US
Field effect transistor with self-adjusting threshold voltage
US-9343587-B2 · May 17, 2016 · US
Semiconductor devices containing an epitaxial perovskite/doped strontium titanate structure
US-2016133753-A1 · May 12, 2016 · US
Transistors, Memory Cells and Semiconductor Constructions
US-2016133717-A1 · May 12, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D64/689?
- CPC H10D64/689 is the Cooperative Patent Classification code for “having ferroelectric layers.”
- How many patents are filed under CPC H10D64/689 (having ferroelectric layers)?
- Our database includes 2,444 publications tagged with this CPC code.
- Is patent activity under CPC H10D64/689 growing?
- Publication counts under this code: 425 in 2024 vs 325 in 2025 (latest complete years).