Replacement metal gate stack for diffusion prevention
US-10332971-B2 · Jun 25, 2019 · US
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Faltermeier Johnathan E patents
Faltermeier Johnathan E is listed as an inventor on 34 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Faltermeier Johnathan E |
| Total patents | 34 |
| First publication | Jan 6, 2015 |
| Latest publication | Jun 25, 2019 |
Notable patents
Publications ranked by popularity score, then publication date.
Gate structure cut after formation of epitaxial active regions
US-10008415-B2 · Jun 26, 2018 · US
High-k layer chamfering to prevent oxygen ingress in replacement metal gate (rmg) process
US-2018145150-A1 · May 24, 2018 · US
Replacement metal gate stack for diffusion prevention
US-2018083117-A1 · Mar 22, 2018 · US
Replacement metal gate stack for diffusion prevention
US-9905665-B2 · Feb 27, 2018 · US
High-K layer chamfering to prevent oxygen ingress in replacement metal gate (RMG) process
US-9865703-B2 · Jan 9, 2018 · US
Partially dielectric isolated fin-shaped field effect transistor (FinFET)
US-9735277-B2 · Aug 15, 2017 · US
High-k layer chamfering to prevent oxygen ingress in replacement metal gate (rmg) process
US-2017194459-A1 · Jul 6, 2017 · US
Partially dielectric isolated fin-shaped field effect transistor (finfet)
US-2017170323-A1 · Jun 15, 2017 · US
Gate structure cut after formation of epitaxial active regions
US-2017140994-A1 · May 18, 2017 · US
Recent patents
Latest publications not already listed above.
Gate structure cut after formation of epitaxial active regions
US-9633906-B2 · Apr 25, 2017 · US
Gate structure cut after formation of epitaxial active regions
US-9559009-B2 · Jan 31, 2017 · US
Partially dielectric isolated fin-shaped field effect transistor (FinFET)
US-9537011-B1 · Jan 3, 2017 · US
Nitridation on HDP oxide before high-k deposition to prevent oxygen ingress
US-9472408-B2 · Oct 18, 2016 · US
Nitridation on HDP oxide before high-k deposition to prevent oxygen ingress
US-9412596-B1 · Aug 9, 2016 · US
Nitridation on hdp oxide before high-k deposition to prevent oxygen ingress
US-2016225629-A1 · Aug 4, 2016 · US
Nitridation on hdp oxide before high-k deposition to prevent oxygen ingress
US-2016225628-A1 · Aug 4, 2016 · US
Replacement metal gate stack for diffusion prevention
US-2016197157-A1 · Jul 7, 2016 · US
FinFET spacer formation by oriented implantation
US-9337315-B2 · May 10, 2016 · US
Method for improving device performance using epitaxially grown silicon carbon (SiC) or silicon-germanium (SiGe)
US-9331174-B2 · May 3, 2016 · US
FinFET spacer formation by oriented implantation
US-9318578-B2 · Apr 19, 2016 · US
Replacement metal gate stack for diffusion prevention
US-9312136-B2 · Apr 12, 2016 · US
Semiconductor structure having buried conductive elements
US-9263454-B2 · Feb 16, 2016 · US
Handler wafer removal by use of sacrificial inert layer
US-2016035616-A1 · Feb 4, 2016 · US
Gate structure cut after formation of epitaxial active regions
US-2016027700-A1 · Jan 28, 2016 · US
Semiconductor structure having buried conductive elements
US-9245892-B2 · Jan 26, 2016 · US
finFETs containing improved strain benefit and self aligned trench isolation structures
US-9240447-B1 · Jan 19, 2016 · US
Semiconductor structure having buried conductive elements
US-2015364476-A1 · Dec 17, 2015 · US
Replacement metal gate stack for diffusion prevention
US-2015255458-A1 · Sep 10, 2015 · US
Semiconductor structure having buried conductive elements
US-2015236024-A1 · Aug 20, 2015 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| IBM | 31 |
| Globalfoundries Inc | 10 |
| Doris Bruce B | 2 |
| Faltermeier Johnathan E | 2 |
| Bedell Stephen W | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D30/024 | 20 |
| H10D84/038 | 16 |
| H10D84/0158 | 15 |
| H10D84/83 | 15 |
| H10D64/691 | 14 |