Replacement metal gate stack for diffusion prevention

Patent metadata

Field	Value
Publication number	US-9905665-B2
Application number	US-201615068218-A
Country	US
Kind code	B2
Filing date	Mar 11, 2016
Priority date	Mar 6, 2014
Publication date	Feb 27, 2018
Grant date	Feb 27, 2018

Abstract

A method of forming a semiconductor structure includes depositing a gate dielectric layer lining a recess of a gate structure formed on a substrate with a first portion of the gate dielectric layer covering sidewalls of the recess and a second portion of the gate dielectric layer covering a bottom of the recess. A protective layer is deposited above the gate dielectric layer and then recessed selectively to the gate dielectric layer so that a top surface of the protective layer is below of the recess. The first portion of the gate dielectric layer is recessed until a top of the first portion of the gate dielectric layer is approximately coplanar with the top surface of the protective layer. The protective layer is removed and a conductive barrier is deposited above the recessed first portion of the gate dielectric layer to cut a diffusion path to the gate dielectric layer.

First claim

The invention claimed is:

1. A semiconductor structure comprising:
a gate structure formed above a substrate, the gate structure comprising:
a metal gate above a conductive barrier, and
a gate dielectric layer below the conductive barrier; and
a capping layer above the gate structure, wherein the conductive barrier separates the capping layer from the gate dielectric layer, wherein the gate dielectric layer has a vertical portion and a horizontal portion, the vertical portion of the gate dielectric layer having a height less than a height of the metal gate measured from a top surface of the substrate, and wherein a topmost surface of the horizontal portion of the gate dielectric layer directly contacts a bottommost surface of the conductive barrier, and further wherein the conductive barrier has a vertical portion and a horizontal portion, and the vertical portion of the conductive barrier at least partially resides over upper surfaces of the vertical portion of the gate dielectric layer.

2. The semiconductor structure of claim 1 , wherein the gate structure comprises a length less than 20 nm.

3. The semiconductor structure of claim 1 , wherein the conductive barrier comprises an n-type workfunction metal.

4. The semiconductor structure of claim 1 , wherein the gate dielectric layer comprises a high-k dielectric material.

5. The semiconductor structure of claim 1 , wherein the height of the vertical portion of the gate dielectric layer is within a range from 1 nm to 100 nm.

6. The semiconductor structure of claim 1 , wherein the vertical portion of the gate dielectric layer comprises a first vertical portion and a second vertical portion, and wherein upper surfaces of the first vertical portion and the second vertical portion of the gate dielectric layer are coplanar to each other.

7. A semiconductor structure, the structure comprising:
a first gate structure and a second gate structure, wherein a length of the second gate structure is greater than a length of the first gate structure; and
a capping layer above the first gate structure and the second gate structure, wherein
the first gate structure comprises a first metal gate above a first conductive barrier, and a first gate dielectric layer below the first conductive barrier, wherein the first conductive barrier separates the capping layer from the first gate dielectric layer; and wherein
the second gate structure comprises a second metal gate above a second conductive barrier, and a second gate dielectric layer below the first conductive barrier, wherein the capping layer is in contact with the second gate dielectric layer.

8. The semiconductor structure of claim 7 , wherein the first gate structure comprises a length less than 20 nm and the second gate structure comprises a length greater than 50 nm.

9. The semiconductor structure of claim 7 , wherein the first conductive barrier and the second conductive barrier comprise an n-type workfunction metal.

10. The semiconductor structure of claim 7 , wherein the first gate dielectric layer and the second gate dielectric layer comprise a high-k dielectric material.

11. The semiconductor structure of claim 7 , wherein the first gate dielectric layer has a vertical portion and a horizontal portion, the vertical portion of the first gate dielectric layer having a height less than a height of the first metal gate, measured from a top surface of the substrate.

12. The semiconductor structure of claim 11 , wherein a topmost surface of the horizontal portion of the first gate dielectric layer directly contacts a bottommost surface of the first conductive barrier.

13. The semiconductor structure of claim 11 , wherein the vertical portion of the first gate dielectric layer has a first vertical portion and a second vertical portion, and wherein upper surfaces of the first vertical portion and the second vertical portion are coplanar to each other.

14. The semiconductor structure of claim 11 , wherein the first conductive barrier has a vertical portion and a horizontal portion, and the vertical portion of the first conductive barrier at least partially resides over upper surfaces of the vertical portion of the first gate dielectric layer.

15. The semiconductor structure of claim 11 , wherein the height of the vertical portion of the first gate dielectric layer is within a range from 1 nm to 100 nm.

16. The semiconductor structure of claim 7 , wherein the second gate dielectric layer has a vertical portion and a horizontal portion, the vertical portion of the second gate dielectric layer having a height equal to the second metal gate, measured from a top surface of the substrate.

17. The semiconductor structure of claim 16 , wherein topmost surface of the vertical portion of the second gate dielectric layer is coplanar with topmost surfaces of the second conductive barrier and the second metal gate.

Assignees

• IBM

Inventors

• Ando Takashi
• Faltermeier Johnathan E
• Fan Su Chen
• Kanakasabapathy Sivananda K
• Ok Injo
• Yamashita Tenko

Classifications

• H10D64/01318

  the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN (comprising a layer of alloys of Si, Ge or C H10D64/01314) · CPC title

• H01L27/088

  Electricity · mapped topic

• H01L21/28088

  Electricity · mapped topic

• H01L29/401

  Electricity · mapped topic

• H01L29/517

  Electricity · mapped topic