Integrated circuit devices including stacked elements and methods of forming the same
US-12588489-B2 · Mar 24, 2026 · US
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Yun Seungchan patents
Yun Seungchan is listed as an inventor on 55 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Yun Seungchan |
| Total patents | 55 |
| First publication | Feb 16, 2023 |
| Latest publication | Mar 24, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
3D-stacked transistor structure with barrier layer between upper gate structure and lower gate structure
US-12575147-B2 · Mar 10, 2026 · US
Integrated circuit devices including a back side power distribution network structure and methods of forming the same
US-2026068269-A1 · Mar 5, 2026 · US
3D-stacked semiconductor device including gate structure with RMG inner spacer protecting lower work-function metal layer
US-12550375-B2 · Feb 10, 2026 · US
Integrated circuit devices including a back side power distribution network structure and methods of forming the same
US-12490491-B2 · Dec 2, 2025 · US
Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methods
US-2025311304-A1 · Oct 2, 2025 · US
Semiconductor device including stacked forksheet transistor structure with isolation wall
US-2025254988-A1 · Aug 7, 2025 · US
Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methods
US-12356665-B2 · Jul 8, 2025 · US
Step-stacked nanowire CMOS structure for low power logic device and method of manufacturing the same
US-12317588-B2 · May 27, 2025 · US
Integrated circuit devices including a metal resistor and methods of forming the same
US-12317582-B2 · May 27, 2025 · US
Recent patents
Latest publications not already listed above.
Transistor device having semiconductor spacer, and fabrication method thereof
US-2025169186-A1 · May 22, 2025 · US
Transistor device having gate structure with isolation region therein, and related fabrication method
US-2025159928-A1 · May 15, 2025 · US
Stacked transistor device formed using multi-layer dummy gate
US-2025159980-A1 · May 15, 2025 · US
Transistor devices having gate-cuts, and fabrication methods thereof
US-2025149340-A1 · May 8, 2025 · US
Stacked transistor device having capping layer on upper gate material, and related fabrication method
US-2025151389-A1 · May 8, 2025 · US
Integrated circuit device including a pfet with a silicon germanium cladded channel and methods of forming the same
US-2025120127-A1 · Apr 10, 2025 · US
Semiconductor device including gate contact structure formed from gate structure
US-2025120183-A1 · Apr 10, 2025 · US
Multi-stack semiconductor device with zebra nanosheet structure
US-2025107172-A1 · Mar 27, 2025 · US
3d-stacked semiconductor device having different channel structures, source/drain regions, and gate structures at different levels
US-2025098324-A1 · Mar 20, 2025 · US
Resistor structures of integrated circuit devices including stacked transistors and methods of forming the same
US-12249603-B2 · Mar 11, 2025 · US
Integrated circuit devices including a common gate electrode and methods of forming the same
US-12243946-B2 · Mar 4, 2025 · US
3d-stacked semiconductor device including middle isolation structure and bspdn structure
US-2025040242-A1 · Jan 30, 2025 · US
Semiconductor device including gate contact structure formed from gate structure
US-12211837-B1 · Jan 28, 2025 · US
3d-stacked semiconductor device manufactured using channel spacer
US-2025031444-A1 · Jan 23, 2025 · US
Integrated circuit devices including stacked field-effect transistors in multi-height cells and methods of forming the same
US-2025022773-A1 · Jan 16, 2025 · US
Multi-stack semiconductor device with zebra nanosheet structure
US-12183786-B2 · Dec 31, 2024 · US
Semiconductor device including backside source/drain contact structure with contact spacer and backside gate contact structure
US-2024395900-A1 · Nov 28, 2024 · US
Integrated circuit devices including intergate spacer and methods of fabrication the same
US-2024371880-A1 · Nov 7, 2024 · US
Integrated circuit device including stacked transistors and methods of fabrication the same
US-2024363633-A1 · Oct 31, 2024 · US
Integrated circuit devices including a back side power distribution network structure and methods of forming the same
US-2024363491-A1 · Oct 31, 2024 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Samsung Electronics Co Ltd | 55 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D84/038 | 53 |
| H10D30/43 | 47 |
| H10D62/121 | 44 |
| H10D88/00 | 43 |
| H10D30/6757 | 43 |