Magnetic exchange coupled MTJ free layer having low switching current and high data retention
US-12190925-B2 · Jan 7, 2025 · US
This page is not indexed by search engines while we improve data quality.
Worledge Daniel C patents
Worledge Daniel C is listed as an inventor on 132 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Worledge Daniel C |
| Total patents | 132 |
| First publication | Jan 6, 2015 |
| Latest publication | Jan 7, 2025 |
Notable patents
Publications ranked by popularity score, then publication date.
Double spin filter tunnel junction
US-11569439-B2 · Jan 31, 2023 · US
In-situ annealing and etch back steps to improve exchange stiffness in cobalt iron boride based perpendicular magnetic anisotropy free layers
US-11527707-B2 · Dec 13, 2022 · US
Double spin filter tunnel junction
US-11417837-B2 · Aug 16, 2022 · US
Double spin filter tunnel junction
US-11309488-B2 · Apr 19, 2022 · US
Thin reference layer for STT MRAM
US-11223010-B2 · Jan 11, 2022 · US
Spin hall write select for magneto-resistive random access memory
US-11164615-B2 · Nov 2, 2021 · US
Magnetic field sensor based on topological insulator and insulating coupler materials
US-10734571-B2 · Aug 4, 2020 · US
In-situ annealing and etch back steps to improve exchange stiffness in cobalt iron boride based perpendicular magnetic anisotropy free layers
US-2020083438-A1 · Mar 12, 2020 · US
In-situ annealing and etch back steps to improve exchange stiffness in cobalt iron boride based perpendicular magnetic anisotropy free layers
US-10553781-B2 · Feb 4, 2020 · US
Recent patents
Latest publications not already listed above.
Magnetic exchange coupled MTJ free layer having low switching current and high data retention
US-10510390-B2 · Dec 17, 2019 · US
Magnetic exchange coupled MTJ free layer having low switching current and high data retention
US-10510391-B2 · Dec 17, 2019 · US
Magnetic exchange coupled MTJ free layer with double tunnel barriers having low switching current and high data retention
US-10453509-B2 · Oct 22, 2019 · US
Bad bit register for memory
US-10437665-B2 · Oct 8, 2019 · US
Spin transfer torque cell for magnetic random access memory
US-10424727-B2 · Sep 24, 2019 · US
Thin reference layer for stt mram
US-2019288186-A1 · Sep 19, 2019 · US
Bad bit register for memory
US-10394647-B2 · Aug 27, 2019 · US
Magnetic Exchange Coupled MTJ Free Layer Having Low Switching Current And High Data Retention
US-2019244647-A1 · Aug 8, 2019 · US
In-situ annealing and etch back steps to improve exchange stiffness in cobalt iron boride based perpendicular magnetic anisotropy free layers
US-10374145-B2 · Aug 6, 2019 · US
Thin reference layer for STT MRAM
US-10361361-B2 · Jul 23, 2019 · US
Spin transfer torque cell for magnetic random access memory
US-2019221738-A1 · Jul 18, 2019 · US
Magnetic exchange coupled MTJ free layer with double tunnel barriers having low switching current and high data retention
US-10332576-B2 · Jun 25, 2019 · US
Spin transfer torque cell for magnetic random access memory
US-10326074-B2 · Jun 18, 2019 · US
Growth of metal on a dielectric
US-10294561-B2 · May 21, 2019 · US
Multibit self-reference thermally assisted MRAM
US-10236438-B2 · Mar 19, 2019 · US
Three terminal spin hall MRAM
US-10229722-B2 · Mar 12, 2019 · US
Three Terminal Spin Hall MRAM
US-2019043547-A1 · Feb 7, 2019 · US
Magnetic field sensor based on topological insulator and insulating coupler materials
US-10170688-B2 · Jan 1, 2019 · US
Secure off-chip MRAM
US-10170178-B2 · Jan 1, 2019 · US
Bad bit register for memory
US-2018373589-A1 · Dec 27, 2018 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| IBM | 132 |
| Crocus Technology Sa | 14 |
| Samsung Electronics Co Ltd | 9 |
| Univ Alabama | 3 |
| Gaidis Michael C | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.