Magnetic exchange coupled MTJ free layer having low switching current and high data retention

Patent metadata

Field	Value
Publication number	US-12190925-B2
Application number	US-201916386490-A
Country	US
Kind code	B2
Filing date	Apr 17, 2019
Priority date	Jun 7, 2017
Publication date	Jan 7, 2025
Grant date	Jan 7, 2025

Abstract

Embodiments of the invention are directed to a magnetic tunnel junction (MTJ) storage element that includes a reference layer, a tunnel barrier and a free layer on an opposite side of the tunnel barrier layer from the reference layer. The reference layer has a fixed magnetization direction. The free layer includes a first region, a second region and a third region. The third region is formed from a third material that is configured to magnetically couple the first region and the second region. The first region is formed from a first material having a first predetermined magnetic moment, and the second region is formed from a second material having a second predetermined magnetic moment. The first predetermined magnetic moment is lower that the second predetermined magnetic moment.

First claim

What is claimed is:

1. A magnetic tunnel junction (MTJ) storage element comprising:
a first reference layer having a first fixed magnetization direction;
a first tunnel barrier layer;
a free layer on an opposite side of the first tunnel barrier layer from the first reference layer;
a second tunnel barrier on an opposite side of the free layer from the first tunnel barrier; and
a second reference layer having a second fixed magnetization direction, where the second reference layer is on an opposite side of the second tunnel barrier from the free layer;
where the free layer comprises:
a first region comprising a first material configured to include a first predetermined magnetic moment and a first switchable magnetization direction;
a second region comprising a second material configured to include a second predetermined magnetic moment and a second switchable magnetization direction; and
a first spacer material between the first region and the second region, where the first spacer material is configured to provide magnetic exchange coupling between the first region and the second region;

where the first predetermined magnetic moment is configured to be lower than the second predetermined magnetic moment;
where the MTJ storage element is configured such that, during a write operation of the MTJ storage element, a direction of the first switchable magnetization direction changing causes a direction of the second switchable magnetization direction to change.

2. The MTJ storage element of claim 1 , where:
the first region, the second region and the first spacer material are configured such that the direction of the first switchable magnetization direction changing also initiates the change in the direction of the second switchable magnetization direction;
the first material comprises a first magnetic material;
the second material comprises a second magnetic material; and
the first spacer material comprises a nonmagnetic material.

3. The MTJ storage element of claim 1 , where:
the first reference layer is configured to, during the write operation, receive a write pulse having a magnitude configured to generate and pass an amount of spin torque electrons through the first reference layer material that is insufficient to initiate a process of switching the second switchable magnetization direction of the second region; and
the amount of spin torque electrons passed through the first reference layer is sufficient to initiate a process of switching the first switchable magnetization direction of the first region.

4. The MTJ storage element of claim 3 , where the first region is configured such that the first switchable magnetization direction switching assists the process of switching the second switchable magnetization direction of the second region based at least in part on the magnetic exchange coupling between the first region and the second region provided by the first spacer material.

5. The MTJ storage element of claim 1 , where the second reference layer is configured to, during the write operation, receive a write pulse having a magnitude configured to generate and pass an amount of spin torque electrons through the first region material that is insufficient to initiate a process of switching the first switchable magnetization direction of the first region.

6. The MTJ storage element of claim 5 , where the amount of spin torque electrons passed through the second reference layer is sufficient to initiate a process of switching the second switchable magnetization direction of the second region.

7. The MTJ storage element of claim 1 , where:
the first material is further configured to include a first predetermined activation energy;
the second material is further configured to include a second predetermined activation energy; and
the second predetermined activation energy is configured to be higher than the first predetermined activation energy.

8. The MTJ storage element of claim 1 , where the first spacer material comprises a nonmagnetic material.

9. The MTJ storage element of claim 1 , where the first material includes dopants.

10. The MTJ storage element of claim 1 , where;
the write operation comprises an application of a write current to the MTJ storage element; and
a magnitude of the write current is:
greater than a magnitude of a first switching current that is sufficient to switch the first switchable magnetization direction; and
less than a minimum magnitude of a second switching current that is sufficient to switch the second switchable magnetization direction.

Assignees

• IBM

Inventors

• Hu Guohan
• Worledge Daniel C

Classifications

• H10N50/85

  Materials of the active region · CPC title

• H10N50/80

  Constructional details · CPC title

• H10N50/10 Primary

  Magnetoresistive devices · CPC title

• H10N50/01

  Manufacture or treatment · CPC title

• H10B61/22

  of the field-effect transistor [FET] type · CPC title