Double spin filter tunnel junction

Patent metadata

Field	Value
Publication number	US-11417837-B2
Application number	US-201615298674-A
Country	US
Kind code	B2
Filing date	Oct 20, 2016
Priority date	Oct 6, 2015
Publication date	Aug 16, 2022
Grant date	Aug 16, 2022

Abstract

A memory device that includes a first magnetic insulating tunnel barrier reference layer present on a first non-magnetic metal electrode, and a free magnetic metal layer present on the first magnetic insulating tunnel barrier reference layer. A second magnetic insulating tunnel barrier reference layer may be present on the free magnetic metal layer, and a second non-magnetic metal electrode may be present on the second magnetic insulating tunnel barrier. The first and second magnetic insulating tunnel barrier reference layers are arranged so that their magnetizations are aligned to be anti-parallel.

First claim

What is claimed is:

1. A method of forming a memory device comprising:
forming a first magnetic insulating tunnel barrier reference layer on a first metallic electrode that is present on a substrate, wherein the magnetization of the first magnetic insulating tunnel barrier reference layer is in a first direction;
forming a free magnetic metal layer directly on the first magnetic insulating tunnel barrier reference layer;
forming a second magnetic insulating tunnel barrier reference layer directly on the free magnetic metal layer, wherein each of the first magnetic insulating tunnel barrier reference layer and the second magnetic insulating tunnel barrier reference layer includes an insulating material that is ferromagnetic, and the magnetization of the second magnetic insulating tunnel barrier reference layer is in a second direction; and
forming a second metallic electrode on the second magnetic insulating tunnel barrier reference layer.

2. The method of claim 1 , wherein the first magnetic insulating tunnel barrier reference layer comprises cobalt iron oxide (CoFeOx).

3. The method of claim 1 , wherein the second magnetic insulating tunnel barrier reference layer comprises cobalt iron oxide (CoFeOx).

4. The method of claim 1 , wherein the first magnetic insulating tunnel barrier reference layer is the ferromagnetic insulating material that comprises CoFeAOx, wherein A is an element selected from the group consisting of beryllium (Be), boron (B), magnesium (Mg), aluminum (Al), silicon (Si), calcium (Ca), scandium (Sc), titanium (ti), vanadium (V), chromium (Cr), zinc (Zn), yttria (Y), zirconia (Zr), niobium (Nb), molybdenum (Mo), technetium (Tc), ruthenium (Ru), rhenium (Rh), palladium (Pd), silver (Ag), cadmium (Cd), lutetium (Lu), hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), gold (Au) mercury (Hg), and combinations thereof.

5. The method of claim 1 , wherein the second magnetic insulating tunnel barrier reference layer comprises CoFeAOx, wherein A is an element selected from the group consisting of beryllium (Be), boron (B), magnesium (Mg), aluminum (Al), silicon (Si), calcium (Ca), scandium (Sc), titanium (ti), vanadium (V), chromium (Cr), zinc (Zn), yttria (Y), zirconia (Zr), niobium (Nb), molybdenum (Mo), technetium (Tc), ruthenium (Ru), rhenium (Rh), palladium (Pd), silver (Ag), cadmium (Cd), lutetium (Lu), hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), gold (Au) mercury (Hg), and combinations thereof.

6. The method of claim 1 , wherein the free magnetic metal layer comprises CoFeB.

7. The method of claim 1 , wherein the free magnetic metal layer comprises alloys and/or multilayers including elements selected from the group consisting of Fe, Ni, Co, Cr, V, Mn, Pd, Pt, B, O, N and combinations thereof.

8. The method of claim 1 , wherein at least one of the first magnetic insulating tunnel barrier reference layer, the second magnetic insulating tunnel barrier reference layer and the free magnetic metal layer is deposited using physical vapor deposition.

9. The method of claim 1 , wherein the memory device is a spin torque transfer magnetic random access memory device.

10. A method of forming a memory device comprising:
forming a first magnetic insulating tunnel barrier reference layer on a first metallic electrode that is present on a substrate, wherein the magnetization of the first magnetic insulating tunnel barrier reference layer is in a first direction;
forming a free magnetic metal layer directly on the first magnetic insulating tunnel barrier reference layer, wherein the free magnetic layer is configured to reverse a magnetization direction at a current density in a range of 1×10 6 to 1×10 7 A/cm 2 ;
forming a second magnetic insulating tunnel barrier reference layer directly on the free magnetic metal layer, wherein each of the first magnetic insulating tunnel barrier reference layer and the second magnetic insulating tunnel barrier reference layer includes an insulating material that is ferromagnetic comprising cobalt and iron, and the magnetization of the second magnetic insulating tunnel barrier reference layer is in a second direction, the first direction and the second direction being aligned to be antiparallel to an upper surface of the substrate; and
forming a second metallic electrode on the second magnetic insulating tunnel barrier reference layer.

11. The method of claim 10 , wherein the first magnetic insulating tunnel barrier reference layer comprises cobalt iron oxide (CoFeOx).

12. The method of claim 10 , wherein the second magnetic insulating tunnel barrier reference layer comprises cobalt iron oxide (CoFeOx).

13. The method of claim 10 , wherein the first magnetic insulating tunnel barrier reference layer is the ferromagnetic insulating material that comprises CoFeAOx, wherein A is an element selected from the group consisting of beryllium (Be), boron (B), magnesium (Mg), aluminum (Al), silicon (Si), calcium (Ca), scandium (Sc), titanium (Ti), vanadium (V), chromium (Cr), zinc (Zn), yttria (Y), zirconia (Zr), niobium (Nb), molybdenum (Mo), technetium (Tc), ruthenium (Ru), rhenium (Rh), palladium (Pd), silver (Ag), cadmium (Cd), lutetium (Lu), hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), gold (Au) mercury (Hg), and combinations thereof.

14. The method of claim 10 , wherein the second magnetic insulating tunnel barrier reference layer comprises CoFeAOx, wherein A is an element selected from the group consisting of beryllium (Be), boron (B), magnesium (Mg), aluminum (Al), silicon (Si), calcium (Ca), scandium (Sc), titanium (ti), vanadium (V), chromium (Cr), zinc (Zn), yttria (Y), zirconia (Zr), niobium (Nb), molybdenum (Mo), technetium (Tc), ruthenium (Ru), rhenium (Rh), palladium (Pd), silver (Ag), cadmium (Cd), lutetium (Lu), hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), gold (Au) mercury (Hg), and combinations thereof.

15. The method of claim 10 , wherein the free magnetic metal layer comprises CoFeB.

16. The method of claim 10 , wherein the free magnetic metal layer comprises alloys and/or multilayers including elements selected from the group consisting of Fe, Ni, Co, Cr, V, Mn, Pd, Pt, B, O, N and combinations thereof.

17. The method of claim 10 , wherein at least one of the first magnetic insulating tunnel barrier reference layer, the second magnetic insulating tunnel barrier reference layer and the free magnetic metal layer is deposited using physical vapor deposition.

18. The method of claim 10 , wherein the memory device is a spin torque transfer magnetic random access memory device.

19. A method of forming a memory device comprising:
forming a first magnetic insulating tunnel barrier reference layer on a first metallic electrode that is present on a substrate, wherein the first magnetic insulating tunnel barrier reference layer has a room temperature resistance-area product of greater than 0.1 Ohm-um 2 , a magnetic polarization value, P, of greater than 50%, and the magnetization of the first magnetic insulating tunnel barrier reference layer is in a first direction;
forming a free magnetic metal layer directly on the first magnetic insulating tunnel barrier reference layer, wherein the free magnetic layer is configured to reverse a magnetization direction at a current density in a range of 1×10 6 to 1×10 7 A/cm 2 ,
forming a second magnetic insulating tunnel barrier reference layer directly on

Assignees

• IBM

Inventors

• Worledge Daniel C

Classifications

• G11C11/161

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H01L27/222

  Electricity · mapped topic

• H01L43/12

  Electricity · mapped topic

• H01L43/08

  Electricity · mapped topic

• H01L43/02

  Electricity · mapped topic