Passivation scheme for pad openings and trenches
US-2025343181-A1 · Nov 6, 2025 · US
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Wang Shen-Ping patents
Wang Shen-Ping is listed as an inventor on 51 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Wang Shen-Ping |
| Total patents | 51 |
| First publication | Feb 12, 2015 |
| Latest publication | Nov 6, 2025 |
Notable patents
Publications ranked by popularity score, then publication date.
Passivation scheme for pad openings and trenches
US-12424573-B2 · Sep 23, 2025 · US
Passivation scheme for pad openings and trenches
US-2024282728-A1 · Aug 22, 2024 · US
Semiconductor device
US-12027603-B2 · Jul 2, 2024 · US
Passivation scheme for pad openings and trenches
US-12002774-B2 · Jun 4, 2024 · US
Semiconductor device
US-11901433-B2 · Feb 13, 2024 · US
Passivation scheme for pad openings and trenches
US-2023005852-A1 · Jan 5, 2023 · US
Semiconductor device
US-2022336631-A1 · Oct 20, 2022 · US
Passivation scheme for pad openings and trenches
US-11444046-B2 · Sep 13, 2022 · US
Semiconductor device
US-11374107-B2 · Jun 28, 2022 · US
Recent patents
Latest publications not already listed above.
Semiconductor device
US-2021384319-A1 · Dec 9, 2021 · US
Group III-V device structure
US-11114543-B2 · Sep 7, 2021 · US
Passivation scheme for pad openings and trenches
US-2020395320-A1 · Dec 17, 2020 · US
Ultra high voltage semiconductor device with electrostatic discharge capabilities
US-10840371-B2 · Nov 17, 2020 · US
Passivation scheme for pad openings and trenches
US-10804231-B2 · Oct 13, 2020 · US
Semiconductor device
US-2020312983-A1 · Oct 1, 2020 · US
Semiconductor device
US-10686054-B2 · Jun 16, 2020 · US
Ultra high voltage semiconductor device with electrostatic discharge capabilities
US-2020066902-A1 · Feb 27, 2020 · US
Ultra high voltage semiconductor device with electrostatic discharge capabilities
US-10461183-B2 · Oct 29, 2019 · US
Passivation scheme for pad openings and trenches
US-2019273059-A1 · Sep 5, 2019 · US
Passivation scheme for pad openings and trenches
US-10312207-B2 · Jun 4, 2019 · US
Semiconductor device
US-2019109210-A1 · Apr 11, 2019 · US
Passivation scheme for pad openings and trenches
US-2019019770-A1 · Jan 17, 2019 · US
Method for forming group III-V device structure
US-10163707-B2 · Dec 25, 2018 · US
Novel seal ring for iii-v compound semiconductor-based devices
US-2018337228-A1 · Nov 22, 2018 · US
Method for forming group iii-v device structure
US-2018337093-A1 · Nov 22, 2018 · US
Method for fabricating semiconductor device
US-10134867-B2 · Nov 20, 2018 · US
Method for fabricating semiconductor device
US-2018233577-A1 · Aug 16, 2018 · US
Group iii-v device structure
US-2018212047-A1 · Jul 26, 2018 · US
Ultra high voltage semiconductor device with electrostatic discharge capabilities
US-2018151724-A1 · May 31, 2018 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Taiwan Semiconductor Mfg Co Ltd | 43 |
| Taiwan Semiconductor Mfg | 8 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D64/257 | 26 |
| H10D64/256 | 22 |
| H01L29/41758 | 22 |
| H10D62/8503 | 17 |
| H10D30/475 | 17 |