Ultra high voltage semiconductor device with electrostatic discharge capabilities

Patent metadata

Field	Value
Publication number	US-10461183-B2
Application number	US-201815882193-A
Country	US
Kind code	B2
Filing date	Jan 29, 2018
Priority date	Feb 14, 2014
Publication date	Oct 29, 2019
Grant date	Oct 29, 2019

Abstract

A device having a drain region with a drain rectangular portion having a first end and a second end, a first drain end portion contiguous with the drain rectangular portion and extending from the first end of the drain rectangular portion away from a center of the drain region, and a second drain end portion contiguous with the drain rectangular portion and extending from the second end of the drain rectangular portion away from the center of the drain region. The semiconductor device also comprises a source region spaced from and surrounding the drain region in the first layer.

First claim

What is claimed is:

1. A semiconductor device comprising:
a first layer over a semiconductor substrate;
a drain region in the first layer, the drain region comprising
a drain rectangular portion;
a first drain end portion contiguous with the drain rectangular portion and extending from the drain rectangular portion away from a center of the drain region; and

a second drain end portion contiguous with the drain rectangular portion and extending from the drain rectangular portion away from the center of the drain region; and
a source region spaced a distance from and surrounding the drain region in the first layer,
wherein the first drain end portion and the second drain end portion have a same doping type and each of the first drain end portion and the second drain end portion have different doping concentrations from the drain rectangular portion.

2. The semiconductor device of claim 1 , wherein the source region comprises:
a first source rectangular portion parallel to, and aligned with, the drain rectangular portion on a first side of the drain rectangular portion;
a second source rectangular portion parallel to, and aligned with, the drain rectangular portion on a second side of the drain rectangular portion opposite the first side of the drain rectangular portion;
a first source end portion coupling the first source rectangular portion to the second source rectangular portion on a first end side of the drain rectangular portion; and
a second source end portion coupling the first source rectangular portion to the second source rectangular portion on a second end side of the drain rectangular portion.

3. The semiconductor device of claim 2 , further comprising:
a P+ doped well in the source region; and
an N+ doped well in the source region,
wherein the first source end portion and the second source end portion are free from having the N+ doped well.

4. The semiconductor device of claim 2 , wherein the drain rectangular portion is an N+ doped region.

5. The semiconductor device of claim 4 , wherein the first source end portion and the second source end portion are entirely P-doped.

6. The semiconductor device of claim 3 , further comprising
a second layer over the first layer, the second layer over the source region, free from being in contact with the drain region, and comprising a gate electrode.

7. The semiconductor device of claim 6 , further comprising:
an insulation layer between the source region and the drain region, and between the second layer and the drain region.

8. The semiconductor device of claim 2 , wherein the drain rectangular portion has a length between a first end and a second end of the drain rectangular portion, and the first source rectangular portion and the second source rectangular portion have a same length as the drain rectangular portion.

9. The semiconductor device of claim 1 , further comprising:
an isolation feature on the semiconductor substrate, wherein the drain rectangular portion extends between a first portion of the isolation feature to a second portion of the isolation feature.

10. The semiconductor device of claim 1 , wherein the first drain end portion and the second drain end portion are semicircular.

11. A semiconductor device comprising:
a first layer over a semiconductor substrate;
a drain region having a first doping type in the first layer, the drain region comprising
a drain rectangular portion having a first end and a second end;
a first drain end portion contiguous with the drain rectangular portion, the first drain end portion having a lower doping concentration than the drain rectangular portion;
a second drain end portion contiguous with the drain rectangular portion, the second drain end portion having a lower doping concentration than the drain rectangular portion; and
a source region spaced a distance from and surrounding the drain region in the first layer.

12. The semiconductor device of claim 11 , wherein the drain rectangular portion has a length between the first end and the second end of the drain rectangular portion, and a portion of the source region having a same doping type and doping concentration as the drain rectangular portion has an overall length that is two times the length of the drain rectangular portion.

13. The semiconductor device of claim 11 , wherein the source region comprises:
a first source portion on a first side of the drain rectangular portion;
a second source portion on a second side of the drain rectangular portion opposite the first side of the drain rectangular portion;
a first source end portion coupling the first source portion to the second source portion on a first end side of the drain rectangular portion corresponding to the first end of the drain rectangular portion; and
a second source end portion coupling the first source portion to the second source portion on a second end side of the drain rectangular portion corresponding to the second end of the drain rectangular portion.

14. The semiconductor device of claim 13 , wherein the first source end portion is semicircular.

15. The semiconductor device of claim 14 , wherein the second source end portion is semicircular.

16. The semiconductor device of claim 15 , wherein the first source end portion and the second source end portion are P-doped.

17. A device comprising:
an epitaxial layer of a first dopant type over a semiconductor substrate;
a drain region in the epitaxial layer, the drain region comprising:
a drain rectangular portion having a first end and a second end;
a first drain end portion contiguous with the drain rectangular portion and extending from the first end of the drain rectangular portion away from a center of the drain region; and
a second drain end portion contiguous with the drain rectangular portion and extending from the second end of the drain rectangular portion away from the center of the drain region; and
a source region surrounding the drain region; and
a first portion of an isolation feature and a second portion of an isolation feature disposed such that the drain region is disposed between the first and second portions of the isolation feature and wherein the drain rectangular portion extends from an interface with a first side of the first portion to an interface with a first side of the second portion of the isolation feature; and wherein the source region extends from an interface with a second side of the first portion, the second side of the first portion opposite the first side of the first portion.

18. The device of claim 17 , wherein the first and second drain end portions of the drain region each extend between interfaces with the first and second portions of the isolation feature.

19. The device of claim 17 , wherein the isolation feature is a field oxide region.

20. The device of claim 17 , wherein the drain rectangular portion does not extend below the isolation feature.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Yang Tsai-Feng
• Shen Chih-Heng
• Yang Chun-Yi
• Huang Kun-Ming
• Chu Po-Tao
• Wang Shen-Ping

Classifications

• H01L29/0878

  Electricity · mapped topic

• H01L29/41766

  Electricity · mapped topic

• H01L29/0696

  Electricity · mapped topic

• H01L29/0886

  Electricity · mapped topic

• H01L29/0692

  Electricity · mapped topic