Enhanced trench isolation structure
US-12581762-B2 · Mar 17, 2026 · US
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Tsai Min-Ying patents
Tsai Min-Ying is listed as an inventor on 67 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Tsai Min-Ying |
| Total patents | 67 |
| First publication | Mar 2, 2017 |
| Latest publication | Mar 17, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Deep trench isolation structure and methods for fabrication thereof
US-2025331319-A1 · Oct 23, 2025 · US
Conductive contact for ion through-substrate via
US-2025318312-A1 · Oct 9, 2025 · US
Photodiode structure for image sensor
US-2025318305-A1 · Oct 9, 2025 · US
Deep trench isolation structure and methods for fabrication thereof
US-12408448-B2 · Sep 2, 2025 · US
Conductive contact for ion through-substrate via
US-12364048-B2 · Jul 15, 2025 · US
Photodiode structure for image sensor
US-12364046-B2 · Jul 15, 2025 · US
Photodiode structure for image sensor
US-12349492-B2 · Jul 1, 2025 · US
Metal-insulator-metal capacitor and methods of manufacturing
US-12328886-B2 · Jun 10, 2025 · US
Semiconductor structure and manufacturing method thereof
US-12191191-B2 · Jan 7, 2025 · US
Recent patents
Latest publications not already listed above.
Semiconductor structure and manufacturing method thereof
US-2024387242-A1 · Nov 21, 2024 · US
Image sensor device and method of fabricating the same
US-2024387578-A1 · Nov 21, 2024 · US
Metal-insulator-metal capacitor and methods of manufacturing
US-2024387614-A1 · Nov 21, 2024 · US
Back-side deep trench isolation structure for image sensor
US-2024379713-A1 · Nov 14, 2024 · US
Deep trench isolations and methods of forming the same
US-2024363671-A1 · Oct 31, 2024 · US
Deep trench isolations and methods of forming the same
US-12087801-B2 · Sep 10, 2024 · US
Image sensor having stacked metal oxide films as fixed charge film
US-12080738-B2 · Sep 3, 2024 · US
Conductive contact for ion through-substrate via
US-2024170524-A1 · May 23, 2024 · US
Conductive contact for ion through-substrate via
US-11929379-B2 · Mar 12, 2024 · US
Enhanced trench isolation structure
US-2024021642-A1 · Jan 18, 2024 · US
Back-side deep trench isolation structure for image sensor
US-11869761-B2 · Jan 9, 2024 · US
Light absorbing layer to enhance p-type diffusion for dti in image sensors
US-2023411425-A1 · Dec 21, 2023 · US
Deep trench isolation structure and methods for fabrication thereof
US-2023402487-A1 · Dec 14, 2023 · US
Photodiode structure for image sensor
US-2023378217-A1 · Nov 23, 2023 · US
Light absorbing layer to enhance P-type diffusion for DTI in image sensors
US-11817469-B2 · Nov 14, 2023 · US
Metal-insulator-metal capacitor and methods of manufacturing
US-2023361164-A1 · Nov 9, 2023 · US
Enhanced trench isolation structure
US-11784204-B2 · Oct 10, 2023 · US
Image sensor having improved full well capacity and related method of formation
US-11545513-B2 · Jan 3, 2023 · US
Back-side deep trench isolation structure for image sensor
US-2022384496-A1 · Dec 1, 2022 · US
Light absorbing layer to enhance p-type diffusion for dti in image sensors
US-2022367535-A1 · Nov 17, 2022 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Taiwan Semiconductor Mfg Co Ltd | 73 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10F39/807 | 43 |
| H10F39/199 | 38 |
| H10F39/026 | 36 |
| H01L27/1463 | 36 |
| H10F39/18 | 33 |