Metal-insulator-metal capacitor and methods of manufacturing

Patent metadata

Field	Value
Publication number	US-2023361164-A1
Application number	US-202217662571-A
Country	US
Kind code	A1
Filing date	May 9, 2022
Priority date	May 9, 2022
Publication date	Nov 9, 2023
Grant date	—

Abstract

Some implementations described herein provide a semiconductor device and methods of formation. The semiconductor device may include a photodiode device electrically connected to a metal-insulator-metal deep-trench capacitor. The metal-insulator-metal deep-trench capacitor includes a layer of an amorphous material between an insulator layer stack of the deep-trench capacitor structure and a capacitor bottom metal layer of the metal-insulator-metal deep-trench capacitor. The amorphous material includes a bandgap energy level that provides a conduction band offset and lowers a probability of electron tunneling from the capacitor bottom metal electrode layer to the insulator layer stack. In this way, leakage associated with grain boundaries, crystal defects, and interfaces of a bottom layer of the insulator layer stack may be overcome to improve a lag performance of the semiconductor device including the metal-insulator-metal deep-trench capacitor.

First claim

What is claimed is:

1 . A device, comprising:
a metal layer; and a capacitor structure over the metal layer comprising:
a capacitor bottom metal electrode layer on the metal layer;
a coating treatment layer on the capacitor bottom metal electrode layer;
an amorphous material layer on the coating treatment layer,
wherein the amorphous material layer comprises a first bandgap; and an insulator layer stack on the amorphous material layer,
wherein the insulator layer stack comprises a bottom material layer comprising a second bandgap that is lesser relative to the first bandgap.

2 . The device of claim 1 , wherein the coating treatment layer comprises:
a titanium oxy nitride material.

3 . The device of claim 1 , wherein the amorphous material layer comprises:
an aluminum oxide material, and
wherein the bottom material layer comprises a zirconium dioxide material.

4 . The device of claim 1 , wherein the amorphous material layer comprises:
a silicon dioxide material, and
wherein the bottom material layer comprises a zirconium dioxide material, or
wherein the bottom material layer comprises an aluminum oxide material.

5 . The device of claim 1 , wherein the second bandgap is less than approximately 5.8 electron volts.

6 . The device of claim 1 , wherein the amorphous material layer comprises:
a thickness that is included in a range of approximately 2 angstroms to approximately 16 angstroms.

7 . The device of claim 1 , wherein the insulator layer stack comprises:
at least one layer of an aluminum oxide material.

8 . The device of claim 1 , wherein the insulator layer stack comprises:
at least one layer of a zirconium dioxide material.

9 . The device of claim 1 , wherein the amorphous material layer includes an aluminum monoxide material, a hafnium silicate material, a lanthanum oxide material, an aluminum nitride material, or a zirconium silicate material.

10 . A method, comprising:
forming a capacitor bottom metal electrode layer along contours of a trench region that extends into a stack of one or more dielectric layers; forming an amorphous material layer over contours of the capacitor bottom metal electrode layer
wherein the amorphous material layer includes a first bandgap;
forming an insulator layer stack along contours of the amorphous material layer,
wherein a bottom layer of the insulator layer stack includes a second bandgap that is lesser relative to the first bandgap; and
forming a capacitor top metal electrode layer on the insulator layer stack.

11 . The method of claim 10 , wherein forming the amorphous material layer comprises:
forming the amorphous material layer using an atomic layer deposition process.

12 . The method of claim 11 , wherein the atomic layer deposition process deposits silicon dioxide to form the amorphous material layer.

13 . The method of claim 11 , wherein the atomic layer deposition process deposits aluminum oxide to form the amorphous material layer.

14 . The method of claim 11 , wherein the atomic layer deposition process deposits an amorphous material having a bandgap that is greater than approximately 5.8 electron volts to form the amorphous material layer.

15 . The method of claim 10 , further comprising:
forming a coating treatment layer on the capacitor bottom metal electrode layer prior to forming the amorphous material layer.

16 . A semiconductor device, comprising:
a capacitor structure comprising:
a capacitor bottom metal electrode layer;
an amorphous material layer over the capacitor bottom metal electrode layer, wherein the amorphous material layer comprises a first bandgap;
an insulator layer stack comprising a bottom layer on the amorphous material layer,
wherein the bottom layer comprises a second bandgap that is lesser relative to the first bandgap; and

integrated circuitry comprising a photodiode that is electrically connected to the capacitor structure.

17 . The semiconductor device of claim 16 , wherein the semiconductor device corresponds to an image sensor device, and
wherein the capacitor structure is configured as a lateral overflow integration capacitor to improve a lag performance of the image sensor device.

18 . The semiconductor device of claim 16 , wherein the capacitor structure corresponds to a metal-insulator-metal of capacitor structure.

19 . The semiconductor device of claim 16 , wherein the capacitor structure corresponds to a deep-trench type capacitor structure, and
wherein the capacitor bottom metal electrode layer is along a contour of the deep-trench capacitor structure, and wherein the amorphous material layer is along a contour of the capacitor bottom metal electrode layer.

20 . The semiconductor device of claim 16 , further comprising:
a coating treatment layer between the capacitor bottom metal electrode layer and the amorphous material layer.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Tsai Min-Ying
• Chang Chih-Ping
• Li Ching I

Classifications

• H10D1/716

  having vertical extensions · CPC title

• H10D1/714 Primary

  having horizontal extensions · CPC title

• H10D1/665

  Trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors · CPC title

• H10D1/047

  of conductor-insulator-semiconductor capacitors, e.g. trench capacitors · CPC title

• H10D1/042

  using deposition processes to form electrode extensions · CPC title