Photodiode structure for image sensor

Patent metadata

Field	Value
Publication number	US-2025318305-A1
Application number	US-202519243270-A
Country	US
Kind code	A1
Filing date	Jun 19, 2025
Priority date	Mar 30, 2021
Publication date	Oct 9, 2025
Grant date	—

Abstract

The present disclosure relates to an image sensor having an epitaxial deposited photodiode structure surrounded by an isolation structure, and an associated method of formation. In some embodiments, a first epitaxial deposition process is performed to form a first doped EPI layer over a substrate. The first doped EPI layer is of a first doping type. Then, a second epitaxial deposition process is performed to form a second doped EPI layer on the first doped photodiode layer. The second doped EPI layer is of a second doping type opposite from the first doping type. Then, an isolation structure is formed to separate the first doped EPI layer and the second photodiode as a plurality of photodiode structures within a plurality of pixel regions. The plurality of photodiode structures is configured to convert radiation that enters from a first side of the image sensor into an electrical signal.

First claim

What is claimed is:

1 . A method of forming an image sensor, comprising:
performing a first epitaxial deposition process to form a first doped EPI layer over a substrate, wherein the first doped EPI layer is of a first doping type; performing a second epitaxial deposition process to form a second doped EPI layer on the first doped photodiode layer, wherein the second doped EPI layer is of a second doping type opposite from the first doping type; and forming an isolation structure to separate the first doped EPI layer and the second doped EPI layer as a plurality of photodiode structures within a plurality of pixel regions and configured to convert radiation that enters from a first side of the image sensor into an electrical signal.

2 . The method of claim 1 , wherein the first doped EPI layer is formed by forming a stack of epitaxial layers with doping concentrations monotonically increasing from bottom to top.

3 . The method of claim 1 , prior to forming the first doped photodiode layer, further comprising performing an epitaxial deposition process to form a doped epitaxial layer of the first doping type over the substrate, wherein the doped epitaxial layer has a doping concentration smaller than that of the first doped photodiode layer.

4 . The method of claim 1 , wherein the formation of the isolation structure comprises forming a plurality of deep trench isolation (DTI) structures from the first side of the image sensor and extending to a position within the first doped photodiode layer.

5 . The method of claim 4 , wherein the formation of the plurality of DTI structures comprises:
forming a plurality of deep trenches between adjacent pixel regions and vertically extending from the first side of the image sensor to the first doped photodiode layer; forming a doped liner with the second doping type lining sidewalls of the deep trenches; and forming a dielectric layer filling inner spaces of the deep trenches between sidewalls of the doped liner.

6 . The method of claim 4 , wherein the formation of the isolation structure comprises forming a plurality of doped isolation wells of the second doping type extending from a second side of the image sensor opposite to the first side, wherein the doped isolation wells directly contact the plurality of DTI structures and the first doped photodiode layer.

7 . The method of claim 1 , further comprising forming a plurality of upper doped photodiode regions by an implantation process from a second side of the image sensor opposite to the first side.

8 . The method of claim 1 , wherein the first doping type is n-type and the second doping type is p-type.

9 . The method of claim 1 , wherein the substrate is of the second doping type.

10 . An image sensor, comprising:
a first doped EPI layer of a first doping type; a second doped EPI layer disposed on the first doped photodiode layer, wherein the second doped EPI layer is of a second doping type opposite from the first doping type; and an isolation structure disposed between adjacent pixel regions of a plurality of pixel regions to separate the first doped EPI layer and the second doped EPI layer to a plurality of photodiode structures that configured to convert radiation that enters from a first side of the image sensor into electrical signal; wherein the first doped EPI layer has a doping concentration monotonically increasing from one side away from the second doped EPI layer to the other side contacting the second doped photodiode layer.

11 . The image sensor of claim 10 , wherein the isolation structure comprises a plurality of deep trench isolation (DTI) structures extending from the first side of the image sensor a first position within the first doped photodiode layer.

12 . The image sensor of claim 11 , wherein the plurality of DTI structures respectively comprises a doped liner of the second doping type directly contacting the first doped photodiode layer.

13 . The image sensor of claim 12 , wherein the plurality of DTI structures further respectively comprises a high-k dielectric liner disposed along the doped liner and a dielectric layer disposed between opposing sidewalls of the high-k dielectric liner.

14 . The image sensor of claim 13 ,
wherein the isolation structure further comprises a plurality of doped isolation wells of the second doping type extending from a second side of the image sensor opposite to the first side to a second position within the first doped photodiode layer; and wherein the doped isolation wells directly contact the DTI structures and the first doped photodiode layer.

15 . The image sensor of claim 12 , further comprising a plurality of upper doped photodiode regions of the first doping type and having sidewall surfaces within the second doped EPI layer and a bottom surface contacting an upper surface of the first doped photodiode layer.

16 . The image sensor of claim 15 , wherein the plurality of upper doped photodiode regions has a doping concentration increasing and then decreasing in a vertical direction from one side away from the first doped EPI layer to the other side contacting the first doped photodiode layer.

17 . The image sensor of claim 12 , wherein the first doping type is n-type and the second doping type is p-type.

18 . An image sensor, comprising:
a plurality of pixel regions of image sensing cells; a first doped EPI layer of a first doping type and a second doped EPI layer of a second doping type contacting each other and disposed across the plurality of pixel regions, the second doping type being opposite from the first doping type; and a plurality of deep trench isolation (DTI) structures disposed between adjacent pixel regions of the plurality of pixel regions to separate the first doped EPI layer and the second doped EPI layer to a plurality of photodiode structures that configured to convert radiation that enters from a first side of the image sensor into electrical signal.

19 . The image sensor of claim 18 , wherein the first doped EPI layer directly contacts sidewalls of the DTI structures.

20 . The image sensor of claim 18 , further comprising a plurality of doped isolation wells of the second doping type disposed between the adjacent pixel regions of the plurality of pixel regions, wherein the doped isolation wells directly contact the DTI structures and the first doped photodiode layer.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Tsai Min-Ying
• Li Ching I

Classifications

• H10F39/811

  Interconnections · CPC title

• H10F39/18

  Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors · CPC title

• H10F39/011 Primary

  Manufacture or treatment of image sensors covered by group H10F39/12 · CPC title

• H10F39/807 Primary

  Pixel isolation structures · CPC title

• H10F39/014

  of CMOS image sensors · CPC title