Image sensor having stacked metal oxide films as fixed charge film

Patent metadata

Field	Value
Publication number	US-12080738-B2
Application number	US-202117400647-A
Country	US
Kind code	B2
Filing date	Aug 12, 2021
Priority date	Mar 17, 2016
Publication date	Sep 3, 2024
Grant date	Sep 3, 2024

Abstract

An image sensor device is disclosed. The image sensor device includes: a substrate having a front surface and a back surface; a radiation-sensing region formed in the substrate; an opening extending from the back surface of the substrate into the substrate; a first metal oxide film including a first metal, the first metal oxide film being formed on an interior surface of the opening; and a second metal oxide film including a second metal, the second metal oxide film being formed over the first metal oxide film; wherein the electronegativity of the first metal is greater than the electronegativity of the second metal. An associated fabricating method is also disclosed.

First claim

What is claimed is:

1. An image sensor device, comprising:
a substrate having a front surface and a back surface;
two adjacent radiation-sensing regions formed in the substrate;
a trench isolation structure extending from the back surface of the substrate into the substrate between the two adjacent radiation-sensing regions, the trench isolation structure includes:
a dielectric material;
a first film being formed between the dielectric material and the substrate;
a second film being formed between the first film and the dielectric material; and
a third film being formed between the second film and the dielectric material;
wherein each of the first film, the second film, and the third film is stacked up from the substrate in a contiguous and conformal manner, and the first film, the second film and the third film together have a gradient electronegativity increasing from the substrate toward the dielectric material.

2. The image sensor device of claim 1 , further comprising a trench isolation feature formed of dielectric material extending from the front surface of the substrate into the substrate between the two adjacent radiation-sensing regions.

3. The image sensor device of claim 1 , wherein the first film includes aluminum.

4. The image sensor device of claim 1 , wherein the second film includes hafnium.

5. The image sensor device of claim 1 , wherein the trench isolation structure has a depth greater than 1.5 μm.

6. The image sensor device of claim 1 , wherein a thickness of each of the first film and the second film is greater than 30 Angstroms.

7. The image sensor device of claim 1 , wherein the first film is further conformally disposed over the back surface of the substrate.

8. The image sensor device of claim 1 , further comprising an interlayer between the first film and the substrate, wherein a thickness of the interlayer is less than a thickness of the first film, the second film or the third film.

9. The image sensor device of claim 8 , wherein the interlayer includes SiO 2 .

10. The image sensor device of claim 8 , wherein a thickness of the interlayer is less than 25 μm.

11. The image sensor device of claim 1 , further comprising a tantalum oxide (Ta 2 O 5 ) layer formed over the second film.

12. An image sensor device, comprising:
a substrate having a front surface and a back surface;
two adjacent radiation-sensing regions formed in the substrate;
a trench isolation extending from the back surface of the substrate into the substrate between the two adjacent radiation-sensing regions; and
a first film, a second film, and a third film sequentially disposed between the substrate and the trench isolation;
wherein each of the first film, the second film, and the third film is stacked up from the substrate in a contiguous and conformal manner, and the first film, the second film, and the third film together have a gradient refractive index increasing from the substrate toward the trench isolation.

13. The image sensor device of claim 12 , further comprising a trench isolation feature extending from the front surface of the substrate into the substrate between the two adjacent radiation-sensing regions and abutting the front surface, and wherein the refractive index of the first film is smaller than the refractive index of the second film, and the refractive index of the second film is smaller than the refractive index of the third film.

14. The image sensor device of claim 12 , wherein the first film includes aluminum.

15. The image sensor device of claim 12 , wherein the second film includes hafnium.

16. The image sensor device of claim 12 , wherein the trench isolation has a depth greater than 1.5 μm.

17. The image sensor device of claim 12 , wherein a thickness of each of the first film and the second film is greater than 30 Angstroms.

18. The image sensor device of claim 12 , wherein the first film is further conformally disposed over the back surface of the substrate.

19. An image sensor device, comprising:
a substrate having a front surface and a back surface;
two adjacent radiation-sensing regions formed in the substrate;
a trench isolation extending from the back surface of the substrate into the substrate between the two adjacent radiation-sensing regions; and
a plurality of films sequentially stacked up between the trench isolation and the substrate, wherein a first film of the plurality of films has greater electronegativity than that of a second film of the plurality of films, the electronegativity of the second film is greater than that of a third film of the plurality of films, the first film has a smaller refractive index than the second film, and each of the third film, the second film, and the first film is stacked up from the substrate in a contiguous and conformal manner.

20. The image sensor device of claim 19 , wherein the first film is an aluminum oxide layer, and the second film is a hafnium oxide layer.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Lai Chih-Yu
• Tsai Min-Ying
• Tu Yeur-Luen
• Trinh Hai-Dang
• Tsai Cheng-Yuan

Classifications

• H10F39/026

  Wafer-level processing · CPC title

• H10F39/195

  X-ray, gamma-ray or corpuscular radiation imagers · CPC title

• H10F39/199

  Back-illuminated image sensors · CPC title

• H10F39/807

  Pixel isolation structures · CPC title

• H10F39/806

  Optical elements or arrangements associated with the image sensors · CPC title