Metal-insulator-metal capacitor and methods of manufacturing

Patent metadata

Field	Value
Publication number	US-12328886-B2
Application number	US-202217662571-A
Country	US
Kind code	B2
Filing date	May 9, 2022
Priority date	May 9, 2022
Publication date	Jun 10, 2025
Grant date	Jun 10, 2025

Abstract

Some implementations described herein provide a semiconductor device and methods of formation. The semiconductor device may include a photodiode device electrically connected to a metal-insulator-metal deep-trench capacitor. The metal-insulator-metal deep-trench capacitor includes a layer of an amorphous material between an insulator layer stack of the deep-trench capacitor structure and a capacitor bottom metal layer of the metal-insulator-metal deep-trench capacitor. The amorphous material includes a bandgap energy level that provides a conduction band offset and lowers a probability of electron tunneling from the capacitor bottom metal electrode layer to the insulator layer stack. In this way, leakage associated with grain boundaries, crystal defects, and interfaces of a bottom layer of the insulator layer stack may be overcome to improve a lag performance of the semiconductor device including the metal-insulator-metal deep-trench capacitor.

First claim

What is claimed is:

1. A device, comprising:
a metal layer;
one or more dielectric layers at least partially on the metal layer, wherein the one or more dielectric layers comprises a trench region exposing a portion of the metal layer; and
a capacitor structure comprising:
a capacitor bottom metal electrode layer in the trench region and on the portion of the metal layer;
a coating treatment layer on an entire inner periphery of the capacitor bottom metal electrode layer;
an amorphous material layer on the coating treatment layer,
wherein the amorphous material layer comprises a first bandgap; and

an insulator layer stack on the amorphous material layer,
wherein the insulator layer stack comprises a bottom material layer comprising a second bandgap that is lesser relative to the first bandgap.

2. The device of claim 1 , wherein the coating treatment layer comprises:
a titanium oxy nitride material.

3. The device of claim 1 , wherein the amorphous material layer comprises:
an aluminum oxide material, and
wherein the bottom material layer comprises a zirconium dioxide material.

4. The device of claim 1 , wherein the amorphous material layer comprises:
a silicon dioxide material, and
wherein the bottom material layer comprises a zirconium dioxide material, or
wherein the bottom material layer comprises an aluminum oxide material.

5. The device of claim 1 , wherein the second bandgap is less than approximately 5.8 electron volts.

6. The device of claim 1 , wherein the amorphous material layer comprises:
a thickness that is included in a range of approximately 2 angstroms to approximately 16 angstroms.

7. The device of claim 1 , wherein the insulator layer stack comprises:
at least one layer of an aluminum oxide material.

8. The device of claim 1 , wherein the insulator layer stack comprises:
at least one layer of a zirconium dioxide material.

9. The device of claim 1 , wherein the amorphous material layer includes an aluminum monoxide material, a hafnium silicate material, a lanthanum oxide material, an aluminum nitride material, or a zirconium silicate material.

10. A semiconductor device, comprising:
a stack of dielectric layers comprising a trench region exposing a portion of a metal layer at least partially under the stack of dielectric layers;
a capacitor structure comprising:
a capacitor bottom metal electrode layer in the trench region and on an entire inner periphery of the portion of the metal layer;
an amorphous material layer over the capacitor bottom metal electrode layer,
wherein the amorphous material layer comprises a first bandgap; and

an insulator layer stack comprising a bottom layer on the amorphous material layer,
wherein the bottom layer comprises a second bandgap that is lesser relative to the first bandgap; and

integrated circuitry comprising a photodiode that is electrically connected to the capacitor structure.

11. The semiconductor device of claim 10 , wherein the semiconductor device corresponds to an image sensor device, and
wherein the capacitor structure is configured as a lateral overflow integration capacitor to improve a lag performance of the image sensor device.

12. The semiconductor device of claim 10 , wherein the capacitor structure corresponds to a metal-insulator-metal capacitor structure.

13. The semiconductor device of claim 10 , wherein the capacitor bottom metal electrode layer is along a contour of the trench region.

14. The semiconductor device of claim 10 , further comprising:
a coating treatment layer between the capacitor bottom metal electrode layer and the amorphous material layer.

15. A device, comprising:
one or more first dielectric layers on a second dielectric layer and a metal layer, wherein the one or more first dielectric layers comprises a trench region exposing a portion of the metal layer;
a capacitor bottom metal electrode layer in the trench region and on the portion of the metal layer;
a coating treatment layer on an entire inner periphery of the capacitor bottom metal electrode layer;
an amorphous material layer on the coating treatment layer; and
an insulator layer stack on the amorphous material layer.

16. The device of claim 15 , wherein the amorphous material layer comprises: a silicon dioxide material.

17. The device of claim 15 , wherein the amorphous material layer comprises:
a thickness that is less than approximately 2 angstroms or greater than approximately 16 angstroms.

18. The device of claim 15 , wherein the insulator layer stack comprises a zirconium dioxide material.

19. The device of claim 15 , wherein the one or more first dielectric layers comprises at least one of:
an inter-layer dielectric (ILD) layer, or
an upper inter-metal dielectric (IMD) layer.

20. The device of claim 15 , wherein the second dielectric layer comprises an inter-metal dielectric (IMD) layer.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Tsai Min-Ying
• Chang Chih-Ping
• Li Ching I

Classifications

• H10D1/716

  having vertical extensions · CPC title

• H10D1/714 Primary

  having horizontal extensions · CPC title

• H10D1/665

  Trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors · CPC title

• H10D1/047

  of conductor-insulator-semiconductor capacitors, e.g. trench capacitors · CPC title

• H10D1/042

  using deposition processes to form electrode extensions · CPC title