Epitaxial formation with treatment and semiconductor devices resulting therefrom
US-12598937-B2 · Apr 7, 2026 · US
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Lin Li-Te patents
Lin Li-Te is listed as an inventor on 256 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Lin Li-Te |
| Total patents | 256 |
| First publication | Apr 18, 2017 |
| Latest publication | Apr 7, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Isolation structure for semiconductor device
US-2026075893-A1 · Mar 12, 2026 · US
Reducing pattern loading in the etch-back of metal gate
US-12575156-B2 · Mar 10, 2026 · US
High selectivity etching with germanium-containing gases
US-12520558-B2 · Jan 6, 2026 · US
Method for fabricating a semiconductor device including etching nanostructures
US-12513952-B2 · Dec 30, 2025 · US
Isolation structure for semiconductor device
US-12501670-B2 · Dec 16, 2025 · US
Dry Etching Of Semiconductor Structures With Fluorine-Containing Gases
US-2025366119-A1 · Nov 27, 2025 · US
Method for manufacturing semiconductor device
US-2025366005-A1 · Nov 27, 2025 · US
Method for forming a semiconductor device and devices fabricated thereof
US-2025364312-A1 · Nov 27, 2025 · US
Dry etching of semiconductor structures with fluorine-containing gases
US-12471344-B2 · Nov 11, 2025 · US
Recent patents
Latest publications not already listed above.
Stacked transistor channel regions and methods of forming the same
US-2025344499-A1 · Nov 6, 2025 · US
Semiconductor device structure with inner spacer layer
US-2025331214-A1 · Oct 23, 2025 · US
Air Inner Spacers
US-2025318195-A1 · Oct 9, 2025 · US
Pattern fidelity enhancement
US-2025308892-A1 · Oct 2, 2025 · US
Semiconductor structure
US-2025294791-A1 · Sep 18, 2025 · US
Isolation structures in semiconductor devices
US-2025287652-A1 · Sep 11, 2025 · US
Dielectric protection layer in middle-of-line interconnect structure manufacturing method
US-2025267925-A1 · Aug 21, 2025 · US
Semiconductor arrangement and method for making
US-12396245-B2 · Aug 19, 2025 · US
Semiconductor device having fins and method of fabricating the same
US-12396205-B2 · Aug 19, 2025 · US
Spacer structure for semiconductor device and method for forming the same
US-2025261436-A1 · Aug 14, 2025 · US
Semiconductor device structure with inner spacer layer
US-12389619-B2 · Aug 12, 2025 · US
Air inner spacers
US-12376337-B2 · Jul 29, 2025 · US
Semiconductor device structures and methods of forming the same
US-2025226219-A1 · Jul 10, 2025 · US
Semiconductor device and method for manufacturing the same
US-12356646-B2 · Jul 8, 2025 · US
Semiconductor device with reduced loading effect
US-2025212497-A1 · Jun 26, 2025 · US
Selective etching method and semiconductor structure manufactured using the same
US-2025201571-A1 · Jun 19, 2025 · US
Inner spacer formation in multi-gate transistors
US-12336252-B2 · Jun 17, 2025 · US
Pattern fidelity enhancement
US-12334342-B2 · Jun 17, 2025 · US
Method For FinFET Fabrication And Structure Thereof
US-2025185346-A1 · Jun 5, 2025 · US
Method of fabricating a semiconductor device
US-12310043-B2 · May 20, 2025 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Taiwan Semiconductor Mfg Co Ltd | 264 |
| Tsmc Nanjing Company Ltd | 4 |
| Giga Byte Tech Co Ltd | 2 |
| Taiwan Semiconducor Mfg Company Ltd | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D84/038 | 157 |
| H10D30/024 | 138 |
| H10D64/017 | 131 |
| H10D84/0158 | 127 |
| H10P50/283 | 117 |