Methods and systems for generating short and readable transaction reference numbers using proof-of-work
US-2025342455-A1 · Nov 6, 2025 · US
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Gao Yunfei patents
Gao Yunfei is listed as an inventor on 48 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Gao Yunfei |
| Total patents | 48 |
| First publication | Jul 4, 2019 |
| Latest publication | Nov 6, 2025 |
Notable patents
Publications ranked by popularity score, then publication date.
Integrated assemblies having transistor body regions coupled to carrier-sink-structures; and methods of forming integrated assemblies
US-12219758-B2 · Feb 4, 2025 · US
Memory device including 2-transistor memory cell structure for neural network
US-2025029638-A1 · Jan 23, 2025 · US
Trench-gate source follower for low-noise scaled pixel
US-12148774-B2 · Nov 19, 2024 · US
Complementary metal-oxide semiconductor (CMOS) image sensors with saddle-gate source follower for imaging pixels
US-12142620-B2 · Nov 12, 2024 · US
Integrated Assemblies Having Transistor Body Regions Coupled to Carrier-Sink-Structures; and Methods of Forming Integrated Assemblies
US-2024172432-A1 · May 23, 2024 · US
Integrated assemblies having transistor body regions coupled to carrier-sink-structures; and methods of forming integrated assemblies
US-11910597-B2 · Feb 20, 2024 · US
Apparatuses comprising vertical transistors having gate electrodes at least partially recessed within channel regions, and related methods and systems
US-11908932-B2 · Feb 20, 2024 · US
Oxygen carrying materials with surface modification for redox-based catalysis and methods of making and uses thereof
US-2023415124-A1 · Dec 28, 2023 · US
Square-gate source-follower for CMOS image sensor pixel
US-11830897-B2 · Nov 28, 2023 · US
Recent patents
Latest publications not already listed above.
Oxygen carrying materials with surface modification for redox-based catalysis and methods of making and uses thereof
US-11813592-B2 · Nov 14, 2023 · US
Complex oxides for reactive oxygen separation and related applications
US-2023256422-A1 · Aug 17, 2023 · US
Adjustable well capacity pixel for semiconductor imaging sensors
US-2023215885-A1 · Jul 6, 2023 · US
Trench-gate source follower for low-noise scaled pixel
US-2023094943-A1 · Mar 30, 2023 · US
Ferroelectric-oxide hybrid-gate transistor block for semiconductor imaging sensors
US-11610923-B2 · Mar 21, 2023 · US
Integrated assemblies having conductive material along three of four sides around active regions, and methods of forming integrated assemblies
US-11600535-B2 · Mar 7, 2023 · US
Integrated assemblies having shield lines between digit lines, and methods of forming integrated assemblies
US-11581317-B2 · Feb 14, 2023 · US
Split-sel cmos image sensor pixel
US-2023013187-A1 · Jan 19, 2023 · US
Metal insulator semiconductor (MIS) contact in three dimensional (3D) vertical memory
US-11538809-B2 · Dec 27, 2022 · US
Integrated assemblies having polycrystalline first semiconductor material adjacent conductively-doped second semiconductor material
US-11527620-B2 · Dec 13, 2022 · US
Integrated Assemblies Having Transistor Body Regions Coupled to Carrier-Sink-Structures; and Methods of Forming Integrated Assemblies
US-2022262813-A1 · Aug 18, 2022 · US
Ferroelectric-oxide hybrid-gate transistor block for semiconductor imaging sensors
US-2022238580-A1 · Jul 28, 2022 · US
Access devices formed with conductive contacts
US-11393928-B2 · Jul 19, 2022 · US
Square-gate source-follower for cmos image sensor pixel
US-2022216252-A1 · Jul 7, 2022 · US
Saddle-gate source follower for imaging pixels
US-2022199663-A1 · Jun 23, 2022 · US
Integrated assemblies having transistor body regions coupled to carrier-sink-structures; and methods of forming integrated assemblies
US-11348932-B2 · May 31, 2022 · US
Metal insulator semiconductor (mis) contact in three dimensional (3d) vertical memory
US-2022068929-A1 · Mar 3, 2022 · US
Transistors comprising an electrolyte, semiconductor devices, electronic systems, and related methods
US-11257962-B2 · Feb 22, 2022 · US
Apparatuses comprising vertical transistors having gate electrodes at least partially recessed within channel regions, and related methods and systems
US-2022029015-A1 · Jan 27, 2022 · US
Integrated Assemblies having Conductive Material Along Three of Four Sides Around Active Regions, and Methods of Forming Integrated Assemblies
US-2021351087-A1 · Nov 11, 2021 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Micron Technology Inc | 31 |
| Shenzhen Goodix Tech Co Ltd | 10 |
| Univ North Carolina State | 6 |
| North Carolina State Univ Office Of Research | 1 |
| Jpmorgan Chase Bank Na | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10B12/05 | 18 |
| H10B12/30 | 16 |
| H10B12/315 | 14 |
| H10D30/025 | 14 |
| H10B12/488 | 13 |