Apparatuses comprising vertical transistors having gate electrodes at least partially recessed within channel regions, and related methods and systems

Patent metadata

Field	Value
Publication number	US-11908932-B2
Application number	US-202016936983-A
Country	US
Kind code	B2
Filing date	Jul 23, 2020
Priority date	Jul 23, 2020
Publication date	Feb 20, 2024
Grant date	Feb 20, 2024

Abstract

An apparatus includes at least one vertical transistor having a channel region. The channel region includes an upper region having a first width and a lower region below the upper region and having a second width smaller than the first width. The upper region defines at least one overhang portion extending laterally beyond the lower region. The at least one vertical transistor further includes gate electrodes at least partially vertically beneath the at least one overhang portion of the upper region of the channel region. Additional apparatuses and related systems and methods are also disclosed.

First claim

What is claimed is:

1. An apparatus, comprising:
a first vertical transistor;
a second vertical transistor adjacent to the first vertical transistor, each of the first vertical transistor and the second vertical transistor comprising:
a channel region comprising:
an upper region having a first width; and
a lower region below the upper region and having a second width smaller than the first width, and wherein the upper region defines at least one overhang portion extending laterally beyond the lower region; and
gate electrodes each having a first portion vertically beneath the at least one overhang portion of the upper region of the channel region, and a second portion extending past the at least one overhang portion of the upper region of the channel region;

a gate dielectric material adjacent to the gate electrodes;
a conductive contact underlying the gate electrodes; and
an insulative structure directly intervening between a gate electrode of the first vertical transistor and a gate electrode of the second vertical transistor, an insulative material of the insulative structure directly intervening between an upper region of a channel region of the first vertical transistor and an upper region of a channel region of the second vertical transistor, and the insulative material of the insulative structure directly vertically intervening between the gate dielectric material and the conductive contact in regions underlying the gate electrodes.

2. The apparatus of claim 1 , wherein sidewalls of the upper region and sidewalls of the lower region are substantially vertical.

3. The apparatus of claim 1 , wherein the insulative material of the insulative structure is directly between the gate electrode of the first vertical transistor and the gate electrode of the second vertical transistor.

4. The apparatus of claim 1 , wherein the insulative structure comprises an air gap directly intervening between the gate electrode of the first vertical transistor and the gate electrode of the second vertical transistor.

5. The apparatus of claim 4 , wherein at least a portion of the air gap is laterally adjacent to the lower region of the channel region.

6. The apparatus of claim 4 , wherein at least a portion of the air gap is laterally adjacent to the upper region of the channel region.

7. The apparatus of claim 1 , wherein the gate electrodes are laterally adjacent to the lower region of the channel region.

8. The apparatus of claim 1 , wherein the gate electrodes are at least partially recessed into the lower region of the channel region.

9. The apparatus of claim 1 , wherein a ratio of the second width of the lower region of the channel region and the first width of the upper region of the channel region is between 0.25 and 0.85.

10. The apparatus of claim 1 , further comprising a conductive material over the upper region of the channel region, wherein the conductive contact comprises another conductive material below the lower region of the channel region.

11. The apparatus of claim 1 , wherein a distance by which the at least one overhang portion of the upper region extends over a gate electrode of the gate electrodes is at least one-third of an overall width of the gate electrode.

12. The apparatus of claim 1 , wherein a distance by which the at least one overhang portion of the upper region extends over a gate electrode of the gate electrodes is at least one-half of an overall width of the gate electrode.

13. The apparatus of claim 1 , wherein a distance by which the at least one overhang portion of the upper region extends over a gate electrode of the gate electrodes is at least two-thirds of an overall width of the gate electrode.

14. The apparatus of claim 1 , wherein upper surfaces of the gate electrodes are below a vertical elevation of a lowermost boundary of the at least one overhang portion of the upper region of the channel region.

15. The apparatus of claim 1 , wherein the gate dielectric material extends between the gate electrodes and the at least one overhang portion of the upper region and between the gate electrodes and the lower region of the channel region.

16. A method of forming vertical transistors of an apparatus, the method comprising:
forming a conductive contact;
removing portions of a channel material to form one or more channel regions separated by trenches;
forming a liner material over bottom surfaces of the trenches and over sidewalls of the one or more channel regions;
removing portions of the liner material from horizontal surfaces of the one or more channel regions;
removing exposed portions of the channel material to form elongated trenches;
removing portions of the channel material below the liner material without substantially removing the liner material to form upper regions of the channel regions having a first width and lower regions of the channel regions below a respective upper region and having a second width smaller than the first width, each upper region defining at least one overhang portion extending laterally beyond an outer boundary of a respective lower region;
forming a gate dielectric material over the sidewalls of the lower regions and at least the at least one overhang portion of each of the upper regions of the channel regions;
forming gate electrodes over the conductive contact and adjacent to the gate dielectric material, a first portion of each gate electrode being vertically beneath a respective overhang portion of a respective upper region of the one or more channel regions and a second portion extending past the at least one overhang portion of the upper region of the channel region, wherein each gate electrode is at least partially recessed within a respective channel region relative to an outermost surface of the respective channel region in a direction orthogonal to a longitudinal axis of a respective vertical transistor; and
forming an insulative structure directly between a gate electrode of a first vertical transistor and a gate electrode of a second vertical transistor adjacent to the first vertical transistor, an insulative material of the insulative structure directly intervening between an upper region of a channel region of the first vertical transistor and an upper region of a channel region of the second vertical transistor, and the insulative material of the insulative structure directly vertically intervening between the gate dielectric material and the conductive contact in regions underlying the gate electrodes.

17. The method of claim 16 , further comprising:
forming a spacer material on bottom surfaces of the elongated trenches;
forming the gate dielectric material over the spacer material, the lower regions of the one or more channel regions, and the upper regions of the one or more channel regions;
forming a gate electrode material over the gate dielectric material within the elongated trenches;
forming recesses through the gate electrode material to expose the spacer material;
forming additional portions of the insulative material in the recesses and over the bottom surfaces of the elongated trenches;
removing portions of the gate dielectric material and the gate electrode material horizontally adjacent to the upper regions of the one or more channel regions; and
forming the insulative material within the elongated trenches.

18. The method of claim 16 , wherein removing the portions of the liner material from the horizontal surfaces of the one or more channel regions and removing the portions of the channel material below the liner material comprises removing t

Assignees

• Micron Technology Inc

Inventors

• Simsek-Ege Fatma Arzum
• Torek Kevin J
• Karda Kamal M
• Gao Yunfei
• Muthukrishnan Kamal K

Classifications

• H10D84/837

  comprising vertical IGFETs · CPC title

• H10D84/0151

  Manufacturing their isolation regions · CPC title

• H10W10/021

  of air gaps · CPC title

• H10W10/20

  Air gaps · CPC title

• H10D84/83

  of only insulated-gate FETs [IGFET] · CPC title