Digitally controlled lithographically-defined multi-frequency acoustic resonators
US-12375060-B2 · Jul 29, 2025 · US
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Fischer Paul patents
Fischer Paul is listed as an inventor on 69 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Fischer Paul |
| Total patents | 69 |
| First publication | Oct 15, 2015 |
| Latest publication | Jul 29, 2025 |
Notable patents
Publications ranked by popularity score, then publication date.
Transfer of a 2d material to a target substrate
US-2025113520-A1 · Apr 3, 2025 · US
Silicide for group III-nitride devices and methods of fabrication
US-12080763-B2 · Sep 3, 2024 · US
Integrated circuit device structures and double-sided electrical testing
US-2024194533-A1 · Jun 13, 2024 · US
Apparatus with multi-wafer based device and method for forming such
US-11948831-B2 · Apr 2, 2024 · US
Integrated circuit device structures and double-sided electrical testing
US-11854894-B2 · Dec 26, 2023 · US
E-D mode 2DEG FET with gate spacer to locally tune VT and improve breakdown
US-11757027-B2 · Sep 12, 2023 · US
Group III-Nitride devices on SOI substrates having a compliant layer
US-11715791-B2 · Aug 1, 2023 · US
Acoustic resonator structure
US-11705882-B2 · Jul 18, 2023 · US
Technologies for thermoelectric-enhanced cooling
US-2023207421-A1 · Jun 29, 2023 · US
Recent patents
Latest publications not already listed above.
Integrated group iii-nitrogen and silicon transistors on the same die
US-2023197732-A1 · Jun 22, 2023 · US
III-N metal-insulator-semiconductor field effect transistors with multiple gate dielectric materials
US-11664417-B2 · May 30, 2023 · US
Antenna gate field plate on 2DEG planar FET
US-11626513-B2 · Apr 11, 2023 · US
Gallium nitride transistors with reliability enhancements
US-2023108072-A1 · Apr 6, 2023 · US
Digitally controlled lithographically-defined multi-frequency acoustic resonators
US-2023091766-A1 · Mar 23, 2023 · US
Cap layer on a polarization layer to preserve channel sheet resistance
US-11610971-B2 · Mar 21, 2023 · US
Transistor gate shape structuring approaches
US-11563098-B2 · Jan 24, 2023 · US
Group III-nitride (III-N) devices and methods of fabrication
US-11552075-B2 · Jan 10, 2023 · US
Schottky diode structures and integration with III-V transistors
US-11521964-B2 · Dec 6, 2022 · US
High breakdown voltage structure for high performance GaN-based HEMT and MOS devices to enable GaN C-MOS
US-11515407-B2 · Nov 29, 2022 · US
Integrated programmable gate radio frequency (RF) switch
US-11489061-B2 · Nov 1, 2022 · US
Silicide for group iii-nitride devices and methods of fabrication
US-2022293738-A1 · Sep 15, 2022 · US
Epitaxial III-N nanoribbon structures for device fabrication
US-11437255-B2 · Sep 6, 2022 · US
Self aligned gate connected plates for group III-Nitride devices and methods of fabrication
US-11430873-B2 · Aug 30, 2022 · US
Implants to enlarge Schottky diode cross-sectional area for lateral current conduction
US-11404407-B2 · Aug 2, 2022 · US
Silicide for group III-Nitride devices and methods of fabrication
US-11387327-B2 · Jul 12, 2022 · US
Tri-gate architecture multi-nanowire confined transistor
US-11387329-B2 · Jul 12, 2022 · US
FET capacitor circuit architectures for tunable load and input matching
US-11380679-B2 · Jul 5, 2022 · US
Implanted substrate contact for in-process charging control
US-11362082-B2 · Jun 14, 2022 · US
Fabrication of Schottky barrier diode using lateral epitaxial overgrowth
US-11342232-B2 · May 24, 2022 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Intel Corp | 67 |
| Mastercard International Inc | 1 |
| Univ Kentucky Res Found | 1 |
| Dasgupta Sansaptak | 1 |
| Radosavljevic Marko | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D62/8503 | 49 |
| H10D30/475 | 44 |
| H10D30/015 | 42 |
| H10D62/151 | 42 |
| H01L29/2003 | 35 |