Epitaxial III-N nanoribbon structures for device fabrication

Patent metadata

Field	Value
Publication number	US-11437255-B2
Application number	US-201716642833-A
Country	US
Kind code	B2
Filing date	Sep 27, 2017
Priority date	Sep 27, 2017
Publication date	Sep 6, 2022
Grant date	Sep 6, 2022

Abstract

A structure, comprising an island comprising a III-N material. The island extends over a substrate and has a sloped sidewall. A cap comprising a III-N material extends laterally from a top surface and overhangs the sidewall of the island. A device, such as a transistor, light emitting diode, or resonator, may be formed within, or over, the cap.

First claim

We claim:

1. A microelectronic device, comprising:
a first structure over a substrate and adjacent to a second structure of lesser lateral width than the first structure, the first and second structures each comprising a III-N material of a first chemical composition, and at least the first structure having a sloped sidewall; and
a cap on a top surface of the first structure, wherein the cap comprises another III-N material, and wherein the cap cantilevers laterally from the top surface of the first structure, extending laterally beyond the sidewall of the first structure and over a space between the first structure and the second structure.

2. The device of claim 1 , wherein the first structure extends over a length of the substrate and the cap extends over the first structure along the length.

3. The device of claim 1 , wherein the device further comprises a third structure wherein the second and third structures extend the length over the substrate and the cap extends over at least a portion of the second structure or third structure.

4. The device of claim 1 , wherein the cap is absent from over the second structure.

5. The device of claim 1 , further comprising a dielectric material within the space between the first structure and the second structure.

6. The device of claim 1 , wherein the second structure has a first sidewall adjacent to the first structure, and wherein the first sidewall has a steeper slope than the sidewall of the first structure.

7. The device of claim 1 , wherein the cap has a different composition than the first composition, the first structure extends from a seed layer comprising a III-N material on the substrate, and the seed layer has a different composition than the first composition.

8. The device of claim 1 , further comprising at least one layer on the cap, the at least one layer comprising a III-N material having a different composition than the cap.

9. The device of claim 1 , wherein the first and second structures are substantially monocrystalline and have the same crystallographic orientation, and wherein the cap has a thickness of 1-50 nanometers and width of 1-20 micrometers.

10. The device of claim 9 , wherein at least one of the cap or the first composition is one of GaN, AlN, InN, AlGaN, InAlN, or InGaN.

11. A system, comprising:
a memory; and
a processor coupled to the memory, the processor comprising the device of claim 1 , and one or more device terminals coupled to the cap.

12. The system of claim 11 , wherein the device comprises one of a transistor, a light emitting diode, or a resonator.

13. The system of claim 11 , wherein:
the device comprises a transistor, and wherein:
a polarization layer extends over the cap, and the polarization layer comprises at least one of AlN, AlGaN or InAlN and has a composition distinct from the cap; or

the device comprises the light-emitting diode, and wherein:
a quantum well structure extends over a portion of the cap, and the quantum well structure comprises alternating layers of III-N material having different bandgaps, and the quantum well structure comprises an InGaN alloy having a composition that ranges from 5% to 40% indium.

14. The system of claim 13 , wherein the device comprises the transistor, and wherein the one or more device terminals coupled to the cap comprise:
a gate electrode over at least a portion of a dielectric layer that extends over one or more portions of the polarization layer;
a source electrode over a source region, the source region adjacent to a first side of the dielectric layer; and
a drain electrode over a drain region, the drain region adjacent to a second side of the dielectric layer, wherein the source region and the drain region extend from the dielectric layer along a width or length of the cap.

15. The system of claim 12 , wherein the device comprises the resonator, the cap comprises AlN, and the one or more device terminals include regions comprising silicon.

16. The system of claim 11 , wherein the cap extends laterally over a first space between the first structure and the second structure, and extends laterally over a second space between the first structure and a third, adjacent, structure, the third structure of lesser width than the first structure.

Assignees

• Intel Corp

Inventors

• Dasgupta Sansaptak
• Radosavljevic Marko
• Then Han Wui
• Fischer Paul
• Lin Kevin

Classifications

• H10P72/14

  Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls · CPC title

• H10P14/6312

  of Group III-V semiconductors · CPC title

• H10P14/2905

  Silicon, silicon germanium or germanium · CPC title

• H10W90/00

  Package configurations · CPC title

• H10P14/3416 Primary

  Nitrides · CPC title