Digitally controlled lithographically-defined multi-frequency acoustic resonators

Patent metadata

Field	Value
Publication number	US-12375060-B2
Application number	US-202117483651-A
Country	US
Kind code	B2
Filing date	Sep 23, 2021
Priority date	Sep 23, 2021
Publication date	Jul 29, 2025
Grant date	Jul 29, 2025

Abstract

In one embodiment, a resonator device includes a substrate comprising a piezoelectric material and a set of electrodes on the substrate. The electrodes are in parallel and a width of the electrodes is equal to a distance between the electrodes. The RF resonator device further includes a set of switches, with each switch coupled to a respective electrode. The switches are to connect to opposite terminals of an alternating current (AC) signal source and select between the terminals of the AC signal source based on an input signal.

First claim

The invention claimed is:

1. A radio frequency (RF) resonator device comprising:
a substrate comprising a piezoelectric material;
a set of electrodes on the substrate, wherein the electrodes are arranged in parallel with one another; and
a set of switches, wherein each switch is coupled to a respective electrode of the set of electrodes and is to connect to opposite terminals of an alternating current (AC) signal source, each switch comprising circuitry to select between the terminals of the AC signal source based on an input signal.

2. The RF resonator device of claim 1 , wherein a width of the electrodes is equal to a distance between the electrodes.

3. The RF resonator device of claim 1 , wherein a ratio of a width of the electrodes to a distance between the electrodes is 60/40 or 40/60.

4. The RF resonator device of claim 1 , wherein a width of the electrodes is between 50-200 nanometers.

5. The RF resonator device of claim 1 , wherein the switches are digitally addressable switches.

6. The RF resonator device of claim 1 , wherein the switches are micro-electromechanical systems (MEMS)-based switches or complementary metal-oxide-semiconductor (CMOS)-based switches.

7. The RF resonator device of claim 1 , wherein the piezoelectric material comprises aluminum and nitrogen.

8. The RF resonator device of claim 7 , wherein the piezoelectric material further comprises Scandium.

9. The RF resonator device of claim 1 , wherein the electrodes comprise molybdenum.

10. A radio frequency (RF) filter apparatus comprising:
input terminals to receive a radio frequency (RF) signal;
a plurality of resonator devices, each resonator device comprising:
a substrate comprising a piezoelectric material;
a set of electrodes on the substrate, wherein the electrodes are arranged in parallel with one another; and
a set of switches, wherein each switch is coupled to a respective electrode of the set of electrodes and is to connect to each of the input terminals, each switch comprising circuitry to select between the input terminals based on an input signal;

control circuitry to control the switches of the resonator devices; and
output terminals to provide a filtered RF signal.

11. The RF filter apparatus of claim 10 , wherein the plurality of resonator devices comprises a set of series resonator devices in series with the input terminals and the output terminals and a set of shunt resonator devices in parallel with the input terminals and the output terminals.

12. The RF filter apparatus of claim 11 , wherein at least certain of the series resonator devices and the shunt resonator devices are in a ladder-type configuration.

13. The RF filter apparatus of claim 11 , wherein at least certain of the series resonator devices and the shunt resonator devices are in a lattice-type configuration.

14. The RF filter apparatus of claim 10 , wherein the piezoelectric material comprises aluminum and nitrogen.

15. The RF filter apparatus of claim 14 , wherein the piezoelectric material further comprises Scandium.

16. The RF filter apparatus of claim 10 , wherein the electrodes comprise molybdenum.

17. The RF filter apparatus of claim 16 , wherein the switches are digitally addressable switches.

18. The RF filter apparatus of claim 10 , wherein the switches are micro-electromechanical systems (MEMS)-based switches or complementary metal-oxide-semiconductor (CMOS)-based switches.

19. A front end apparatus comprising:
a radio frequency (RF) filter apparatus to receive an RF signal, the RF filter apparatus comprising:
input terminals to receive the RF signal;
a plurality of resonator devices, each resonator device comprising:
a substrate comprising a piezoelectric material;
a set of electrodes on the substrate, wherein the electrodes are arranged in parallel with one another; and
a set of switches, wherein each switch is coupled to a respective electrode of the set of electrodes and is to connect to each of the input terminals, each switch comprising circuitry to select between the input terminals based on an input signal; and

control circuitry to control the switches of the resonator devices;

an amplifier to receive a filtered signal output by the RF filter apparatus; and
a mixer to mix the filtered signal with a signal from an oscillator device.

20. A device comprising:
a radio frequency (RF) antenna; and
the front end apparatus of claim 19 .

Assignees

• Intel Corp

Inventors

• Gund Ved V
• O'Brien Kevin P
• Jun Kimin
• Mohammed Edris
• Sen Gupta Arnab
• Metz Matthew V
• Ban Ibrahim L
• Fischer Paul

Classifications

• H03H9/17

  having a single resonator (crystal tuning forks H03H9/21) · CPC title

• H03H9/13

  for networks consisting of piezoelectric or electrostrictive materials (for networks using surface acoustic waves H03H9/145) · CPC title

• H04B1/16 Primary

  Circuits · CPC title

• H03H9/02015

  Characteristics of piezoelectric layers, e.g. cutting angles · CPC title

• H03H2009/02165

  Tuning · CPC title