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US-12261296-B2 · Mar 25, 2025 · US
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Daikoku Hironori patents
Daikoku Hironori is listed as an inventor on 48 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Daikoku Hironori |
| Total patents | 48 |
| First publication | Mar 19, 2015 |
| Latest publication | Mar 25, 2025 |
Notable patents
Publications ranked by popularity score, then publication date.
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US-2024234721-A9 · Jul 11, 2024 · US
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US-2024136522-A1 · Apr 25, 2024 · US
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US-11901556-B2 · Feb 13, 2024 · US
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US-2023040714-A1 · Feb 9, 2023 · US
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US-11502298-B2 · Nov 15, 2022 · US
SiC single crystal production method and production apparatus
US-10968535-B2 · Apr 6, 2021 · US
Active material
US-2021020938-A1 · Jan 21, 2021 · US
SiC single crystal and method for producing same
US-10450671-B2 · Oct 22, 2019 · US
Method for producing SiC single crystal
US-10145025-B2 · Dec 4, 2018 · US
Recent patents
Latest publications not already listed above.
Method for producing SiC single crystal
US-10119199-B2 · Nov 6, 2018 · US
Sic single crystal production method and production apparatus
US-2018312996-A1 · Nov 1, 2018 · US
Apparatus for producing SiC single crystal and method for producing SiC single crystal
US-10100432-B2 · Oct 16, 2018 · US
SiC single crystal production method and production apparatus
US-10081883-B2 · Sep 25, 2018 · US
METHOD FOR PRODUCING SiC SINGLE CRYSTAL
US-2018112328-A1 · Apr 26, 2018 · US
METHOD FOR PRODUCING SiC SINGLE CRYSTAL
US-2018112329-A1 · Apr 26, 2018 · US
Production method of SiC single crystal
US-9920449-B2 · Mar 20, 2018 · US
Apparatus for producing SiC single crystals and method of producing SiC single crystals using said production apparatus
US-9896778-B2 · Feb 20, 2018 · US
Method for producing SiC single crystal
US-9822468-B2 · Nov 21, 2017 · US
SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME
US-2017327968-A1 · Nov 16, 2017 · US
APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL BY SOLUTION GROWTH PROCESS AND CRUCIBLE EMPLOYED THEREIN
US-2017306522-A1 · Oct 26, 2017 · US
METHOD FOR PRODUCING SiC SINGLE CRYSTAL AND APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL
US-2017298533-A1 · Oct 19, 2017 · US
Apparatus for producing SiC single crystal by solution growth method, and method for producing SiC single crystal by using the production apparatus and crucible used in the production apparatus
US-9783911-B2 · Oct 10, 2017 · US
Production apparatus and production method of SiC single crystal
US-9732441-B2 · Aug 15, 2017 · US
APPARATUS FOR MANUFACTURING SiC SINGLE CRYSTAL AND METHOD OF MANUFACTURING SiC SINGLE CRYSTAL
US-2017226658-A1 · Aug 10, 2017 · US
Method for producing a SiC single crystal in the presence of a magnetic field which is applied to a solution
US-9708734-B2 · Jul 18, 2017 · US
Sic single crystal production method and production apparatus
US-2017198408-A1 · Jul 13, 2017 · US
Production apparatus of SiC single crystal by solution growth method, method for producing SiC single crystal using the production apparatus, and crucible used in the production apparatus
US-9702056-B2 · Jul 11, 2017 · US
Method for producing SiC single crystals by control of an angle formed by the meniscus and the side face of the seed crystal and production device for the method
US-9631295-B2 · Apr 25, 2017 · US
SiC single crystal manufacturing method using alternating states of supersaturation
US-9624599-B2 · Apr 18, 2017 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Toyota Motor Co Ltd | 49 |
| Nippon Steel & Sumitomo Metal Corp | 27 |
| Daikoku Hironori | 10 |
| Kusunoki Kazuhiko | 9 |
| Sakamoto Hidemitsu | 8 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| C30B29/36 | 41 |
| C30B19/04 | 29 |
| C30B19/062 | 19 |
| C30B9/06 | 17 |
| C30B17/00 | 16 |