Method for manufacturing a silicon carbide wafer using a susceptor having draining openings
US-10153207-B2 · Dec 11, 2018 · US
using as solvent a component of the crystal composition
using as solvent a component of the crystal composition · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B9/06 |
| Official title | using as solvent a component of the crystal composition |
| Display label | using as solvent a component of the crystal composition |
| Total patents | 101 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 12 |
| 2016 | 13 |
| 2017 | 13 |
| 2018 | 32 |
| 2019 | 8 |
| 2020 | 6 |
| 2021 | 4 |
| 2022 | 3 |
| 2023 | 4 |
| 2024 | 3 |
| 2025 | 3 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Method for producing SiC single crystal
US-10145025-B2 · Dec 4, 2018 · US
Method for making a semimetal compound of Pt by reacting elements Pt and Te
US-10138571-B2 · Nov 27, 2018 · US
Method for producing SiC single crystal
US-10119199-B2 · Nov 6, 2018 · US
Sic single crystal production method and production apparatus
US-2018312996-A1 · Nov 1, 2018 · US
METHOD FOR PREPARING SiC SINGLE CRYSTAL
US-2018298519-A1 · Oct 18, 2018 · US
Apparatus for producing SiC single crystal and method for producing SiC single crystal
US-10100432-B2 · Oct 16, 2018 · US
Silicon-based molten composition and manufacturing method of sic single crystal using the same
US-2018245235-A1 · Aug 30, 2018 · US
Method of producing a monolithic crystal by top-seeded solution growth from a liquid crystal flux comprising a mixture of solid precursors
US-10047456-B2 · Aug 14, 2018 · US
Method for producing nitride crystal
US-10041186-B2 · Aug 7, 2018 · US
Seed crystal holder, crystal growing device, and crystal growing method
US-2018171506-A1 · Jun 21, 2018 · US
Single crystal production apparatus
US-9982366-B2 · May 29, 2018 · US
METHOD FOR PRODUCING SiC SINGLE CRYSTAL
US-2018112328-A1 · Apr 26, 2018 · US
Method for Producing Group III Nitride Semiconductor, Seed Substrate and Group III Nitride Semiconductor Crystal
US-2018097142-A1 · Apr 5, 2018 · US
Semimetal compound of pt and method for making the same
US-2018087187-A1 · Mar 29, 2018 · US
Method for making semimetal compound of pt
US-2018087178-A1 · Mar 29, 2018 · US
Production method of SiC single crystal
US-9920449-B2 · Mar 20, 2018 · US
Seed crystal holder for growing a crystal by a solution method
US-9890470-B2 · Feb 13, 2018 · US
Method for producing gallium nitride crystal by reacting metal gallium and iron nitride
US-9890471-B2 · Feb 13, 2018 · US
Method for producing SiC single crystal substrate in which a Cr surface impurity is removed using hydrochloric acid
US-9873955-B2 · Jan 23, 2018 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B9/06?
- CPC C30B9/06 is the Cooperative Patent Classification code for “using as solvent a component of the crystal composition.”
- How many patents are filed under CPC C30B9/06 (using as solvent a component of the crystal composition)?
- Our database includes 101 publications tagged with this CPC code.
- Is patent activity under CPC C30B9/06 growing?
- Publication counts under this code: 3 in 2024 vs 3 in 2025 (latest complete years).