Nonlinear Optical Material and Methods of Fabrication
US-2018373120-A1 · Dec 27, 2018 · US
Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method (C30B15/00 takes precedence)
Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method (C30B15/00 takes precedence) · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B17/00 |
| Official title | Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method (C30B15/00 takes precedence) |
| Display label | Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method (C30B15/00 takes precedence) |
| Total patents | 77 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 18 |
| 2016 | 14 |
| 2017 | 15 |
| 2018 | 13 |
| 2019 | 8 |
| 2021 | 2 |
| 2022 | 1 |
| 2023 | 2 |
| 2024 | 3 |
| 2025 | 1 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Nonlinear optical material and methods of fabrication
US-10133148-B2 · Nov 20, 2018 · US
Single crystal growing apparatus
US-10066315-B2 · Sep 4, 2018 · US
Method of producing a monolithic crystal by top-seeded solution growth from a liquid crystal flux comprising a mixture of solid precursors
US-10047456-B2 · Aug 14, 2018 · US
Method for producing SiC single crystal
US-9982365-B2 · May 29, 2018 · US
Nonlinear Optical Material and Methods of Fabrication
US-2018120671-A1 · May 3, 2018 · US
Method for growing silicon carbide crystal
US-9951439-B2 · Apr 24, 2018 · US
Method for producing SiC substrate
US-9951441-B2 · Apr 24, 2018 · US
Method for growing silicon carbide crystal
US-9945047-B2 · Apr 17, 2018 · US
Apparatus for producing SiC single crystals and method of producing SiC single crystals using said production apparatus
US-9896778-B2 · Feb 20, 2018 · US
Method for producing gallium nitride crystal by reacting metal gallium and iron nitride
US-9890471-B2 · Feb 13, 2018 · US
Crystal growth apparatus and manufacturing method of group III nitride crystal
US-9856575-B2 · Jan 2, 2018 · US
SiC single crystal and production method thereof
US-9856582-B2 · Jan 2, 2018 · US
METHOD FOR GROWING BETA PHASE OF GALLIUM OXIDE ([beta]-Ga2O3) SINGLE CRYSTALS FROM THE MELT CONTAINED WITHIN A METAL CRUCIBLE
US-2017362738-A1 · Dec 21, 2017 · US
APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL BY SOLUTION GROWTH PROCESS AND CRUCIBLE EMPLOYED THEREIN
US-2017306522-A1 · Oct 26, 2017 · US
METHOD FOR PRODUCING SiC SINGLE CRYSTAL AND APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL
US-2017298533-A1 · Oct 19, 2017 · US
METHOD FOR PRODUCING P-TYPE SiC SINGLE CRYSTAL
US-2017283982-A1 · Oct 5, 2017 · US
Production apparatus and production method of SiC single crystal
US-9732441-B2 · Aug 15, 2017 · US
SiC single-crystal ingot, SiC single crystal, and production method for same
US-9732436-B2 · Aug 15, 2017 · US
APPARATUS FOR MANUFACTURING SiC SINGLE CRYSTAL AND METHOD OF MANUFACTURING SiC SINGLE CRYSTAL
US-2017226658-A1 · Aug 10, 2017 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B17/00?
- CPC C30B17/00 is the Cooperative Patent Classification code for “Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method (C30B15/00 takes precedence).”
- How many patents are filed under CPC C30B17/00 (Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method (C30B15/00 takes precedence))?
- Our database includes 77 publications tagged with this CPC code.
- Is patent activity under CPC C30B17/00 growing?
- Publication counts under this code: 3 in 2024 vs 1 in 2025 (latest complete years).