Method for producing group iii nitride crystals
US-2025129514-A1 · Apr 24, 2025 · US
Vertical dipping system
Vertical dipping system · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B19/062 |
| Official title | {Vertical dipping system} |
| Display label | Vertical dipping system |
| Total patents | 62 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 10 |
| 2016 | 12 |
| 2017 | 18 |
| 2018 | 6 |
| 2019 | 7 |
| 2020 | 1 |
| 2023 | 2 |
| 2024 | 2 |
| 2025 | 3 |
| 2026 | 1 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Crystal preparation apparatus and crystal preparation method
US-2025084558-A1 · Mar 13, 2025 · US
Single-crystal silicon carbide wafer, single-crystal silicon carbide ingot, and method for producing single-crystal silicon carbide
US-2024368806-A1 · Nov 7, 2024 · US
Silicon based melting composition and manufacturing method for silicon carbide single crystal using the same
US-11873576-B2 · Jan 16, 2024 · US
Pzn-based large-size ternary high-performance single crystal, growing method and molten salt furnace thereof
US-2023108035-A1 · Apr 6, 2023 · US
Growth method of high-temperature phase lanthanum borosilicate crystal and use
US-2023002930-A1 · Jan 5, 2023 · US
Silicon Based Melting Composition and Manufacturing Method for Silicon Carbide Single Crystal Using the Same
US-2020224330-A1 · Jul 16, 2020 · US
SiC single crystal and method for producing same
US-10519565-B2 · Dec 31, 2019 · US
SiC single crystal and method for producing same
US-10450671-B2 · Oct 22, 2019 · US
Method of producing crystal
US-10443149-B2 · Oct 15, 2019 · US
Method of manufacturing a garnet type crystal
US-2019309439-A1 · Oct 10, 2019 · US
Faraday rotator, optical isolator, and method of manufacturing faraday rotator
US-2019309440-A1 · Oct 10, 2019 · US
SiC single crystal and method for producing same
US-10415152-B2 · Sep 17, 2019 · US
N-type SiC single crystal and method for its production
US-10167570-B2 · Jan 1, 2019 · US
Method for producing crystal of silicon carbide, and crystal production device
US-10151046-B2 · Dec 11, 2018 · US
SiC single crystal and method for producing same
US-10094044-B2 · Oct 9, 2018 · US
SiC single crystal production method and production apparatus
US-10081883-B2 · Sep 25, 2018 · US
Method for preparing single-crystal cubic sesquioxides and uses
US-9945049-B2 · Apr 17, 2018 · US
Production method of SiC single crystal
US-9920449-B2 · Mar 20, 2018 · US
Crystal growth apparatus and manufacturing method of group III nitride crystal
US-9856575-B2 · Jan 2, 2018 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B19/062?
- CPC C30B19/062 is the Cooperative Patent Classification code for “Vertical dipping system.”
- How many patents are filed under CPC C30B19/062 (Vertical dipping system)?
- Our database includes 62 publications tagged with this CPC code.
- Is patent activity under CPC C30B19/062 growing?
- Publication counts under this code: 2 in 2024 vs 3 in 2025 (latest complete years).