Production method of SiC single crystal

Patent metadata

Field	Value
Publication number	US-9920449-B2
Application number	US-201515113459-A
Country	US
Kind code	B2
Filing date	Feb 12, 2015
Priority date	Feb 12, 2014
Publication date	Mar 20, 2018
Grant date	Mar 20, 2018

Abstract

The production method of an SiC single crystal is a production method of an SiC single crystal by a solution growth process. The production method includes a contact step A, a contact step B, and a growth step. In the contact step A, a partial region of the principal surface is brought into contact with a stored Si—C solution. In the contact step B, a contact region between the principal surface and the stored Si—C solution expands, due to a wetting phenomenon, starting from an initial contact region which is the partial region brought into contact in the contact step A. In the growth step, an SiC single crystal is grown on the principal surface which is in contact with the stored Si—C solution.

First claim

The invention claimed is:

1. A production method of an SiC single crystal by a solution growth process in which a principal surface of a seed crystal is arranged to face downward and brought into contact with an Si—C solution, thereby making an SiC single crystal grow on the principal surface, wherein
the principal surface is flat, and
the production method comprises:
a contact step A of bringing a partial region of the principal surface into contact with a stored Si—C solution;
a contact step B of leaving a contact region between the principal surface and the stored Si—C solution to expand, due to a wetting phenomenon, starting from an initial contact region which is the partial region brought into contact in the contact step A; and
a growth step of making an SiC single crystal grow on the principal surface which is in contact with the stored Si—C solution.

2. The production method according to claim 1 , wherein
the contact step A comprises:
a step A- 1 a of bringing the principal surface into contact with the stored Si—C solution, and thereafter detaching the principal surface from the stored Si—C solution, thereby leading to a state in which the Si—C solution adheres to a partial region of the principal surface; and
a step A- 1 b of bringing the Si—C solution having adhered to the partial region of the principal surface into contact with the stored Si—C solution.

3. The production method according to claim 1 , wherein the contact step A comprises:
a step A- 2 a of bringing a solution contact member into contact with the stored Si—C solution, thereby raising a portion in a vicinity of the solution contact member to be higher than other portions in a liquid surface of the stored Si—C solution; and
a step A- 2 b of bringing a partial region of the principal surface into contact with the raised portion of the liquid surface in the stored Si—C solution.

4. The production method according to claim 1 , wherein
the contact step A comprises:
a step A- 3 of inclining the principal surface with respect to a horizontal plane, and bringing a partial region of the principal surface into contact with the stored Si—C solution; and
a growth step of making the SiC single crystal grow with the principal surface being kept horizontal.

Assignees

• Toyota Motor Co Ltd

Inventors

• Kusunoki Kazuhiko
• Kamei Kazuhito
• Daikoku Hironori
• Sakamoto Hidemitsu

Classifications

• C30B9/06

  using as solvent a component of the crystal composition · CPC title

• C30B19/04 Primary

  the solvent being a component of the crystal composition · CPC title

• C30B19/062

  Vertical dipping system · CPC title

• C30B29/36

  Carbides · CPC title

• C30B9/12

  Salt solvents, e.g. flux growth · CPC title