Apparatus for producing SiC single crystal and method for producing SiC single crystal

Patent metadata

Field	Value
Publication number	US-10100432-B2
Application number	US-201314411942-A
Country	US
Kind code	B2
Filing date	Jul 10, 2013
Priority date	Jul 19, 2012
Publication date	Oct 16, 2018
Grant date	Oct 16, 2018

Abstract

An apparatus ( 10 ) for producing an SiC single crystal is used in the solution growth includes a seed shaft ( 28 ) and a crucible ( 14 ). The seed shaft ( 28 ) has a lower end surface ( 28 S) to which an SiC seed crystal ( 32 ) is to be attached. The crucible ( 14 ) holds an Si—C solution ( 15 ). The seed shaft ( 28 ) includes a cylinder part ( 28 A), a bottom part ( 28 B), and a low heat conductive member ( 28 C). The bottom part ( 28 B) is located at the lower end of the cylinder part ( 28 A) and has the lower end surface ( 28 S). The low heat conductive member ( 28 C) is arranged on the upper surface of the bottom part ( 28 B) and has a thermal conductivity lower than that of the bottom part ( 28 B). This production apparatus can make the temperature within the crystal growth surface of the SiC seed crystal less liable to vary.

First claim

What is claimed is:

1. An apparatus for producing an SiC single crystal, which is used in a solution growth method, comprising:
a seed shaft having a hollow structure and having a lower end surface to which an SiC seed crystal is to be attached; and
a crucible for holding an Si—C solution, wherein
the seed shaft comprises:
a cylinder part;
a bottom part which is located at a lower end of the cylinder part so as to close the lower end of the cylinder part and has the lower end surface; and
a low heat conductive member which is arranged on an upper surface of the bottom part within the seed shaft and has a thermal conductivity lower than that of the bottom part.

2. The apparatus for producing an SiC single crystal according to claim 1 , wherein the low heat conductive member is a heat insulator.

3. The apparatus for producing an SiC single crystal according to claim 1 , wherein the low heat conductive member is arranged on a central portion of the bottom part.

4. The apparatus for producing an SiC single crystal according to claim 1 , wherein a thickness of the low heat conductive member is larger in a central portion than in a peripheral edge portion thereof.

5. The apparatus for producing an SiC single crystal according to claim 4 , wherein the low heat conductive member comprises:
a first low heat conductive part arranged on the upper surface of the bottom part; and
a second low heat conductive part arranged on the central portion of an upper surface of the first low heat conductive part.

6. The apparatus for producing an SiC single crystal according to claim 1 , wherein the low heat conductive member comprises:
a first covering part which covers the upper surface of the bottom part; and
a second covering part which is connected to an upper surface of the first covering part and covers an inner peripheral surface of the cylinder part.

7. The apparatus for producing an SiC single crystal according to claim 1 , wherein the seed shaft further comprises a high heat conductive member which is arranged between the low heat conductive member and the bottom part and has a thermal conductivity higher than that of the bottom part.

8. The apparatus for producing an SiC single crystal according to claim 7 , wherein the high heat conductive member is a metal.

9. The apparatus for producing an SIC single crystal according to claim 1 , wherein the thermal conductivity in the axial direction of the seed shaft of the low heat conductive member is lower than the thermal conductivity in the direction perpendicular to the axial direction of the seed shaft of the low heat conductive member.

10. The apparatus for producing an SiC single crystal according to claim 9 , wherein the low heat conductive member is pyrolytic graphite.

11. The apparatus for producing an SiC single crystal according to claim 1 , wherein the apparatus further comprises:
a heat absorbing source arranged above the low heat conductive member in the cylinder part; and
an elevating device for moving the heat absorbing source up and down.

12. A method for producing an SiC single crystal using a solution growth method, in which the apparatus according to claim 1 is used, comprising the steps of:
attaching the SiC seed crystal to the lower end surface of the seed shaft;
heating the crucible holding a raw material to produce the Si—C solution;
bringing the SiC seed crystal attached to the lower end surface of the seed shaft into contact with the Si—C solution; and
forming and growing an SiC single crystal on the SiC seed crystal.

13. A seed shaft, which is used to produce an SiC single crystal using a solution growth method, has a hollow structure and a lower end surface to which an SiC seed crystal is to be attached, the seed shaft further comprising:
a cylinder part;
a bottom part which is located at a lower end of the cylinder part so as to close the lower end of the cylinder part and has a lower end surface; and
a low heat conductive member which is arranged on an upper surface of the bottom part within the seed shaft and has a thermal conductivity lower than that of the bottom part.

Assignees

• Toyota Motor Co Ltd

Inventors

• Okada Nobuhiro
• Kamei Kazuhito
• Kusunoki Kazuhiko
• Yashiro Nobuyoshi
• Moriguchi Koji
• Daikoku Hironori
• Kado Motohisa
• Sakamoto Hidemitsu

Classifications

• C30B19/068

  Substrate holders · CPC title

• C30B29/36

  Carbides · CPC title

• C30B15/32 Primary

  Seed holders, e.g. chucks · CPC title

• Y10T117/1024

  for crystallization from liquid or supercritical state · CPC title

• C30B15/30

  Mechanisms for rotating or moving either the melt or the crystal (flotation methods C30B15/28) · CPC title