Apparatus for producing SiC single crystals and method of producing SiC single crystals using said production apparatus

Patent metadata

Field	Value
Publication number	US-9896778-B2
Application number	US-201414889463-A
Country	US
Kind code	B2
Filing date	May 19, 2014
Priority date	May 31, 2013
Publication date	Feb 20, 2018
Grant date	Feb 20, 2018

Abstract

An apparatus for producing SiC single crystals where the quality of the SiC single crystals is improved, and a production method using such an apparatus are provided. The apparatus for producing SiC single crystals according to an embodiment of the present invention is employed to produce an SiC single crystal by the solution growth method. The production apparatus includes a crucible and a support shaft. The crucible accommodates an Si—C solution. The support shaft supports the crucible. The support shaft includes a heat removing portion for removing heat from a bottom portion of the crucible. The heat removing portion includes one of (a) a contact portion having a thermal conductivity not less than that of the bottom portion and contacting at least a portion of the bottom portion and (b) a space adjacent to at least a portion of the contact portion or the bottom portion.

First claim

The invention claimed is:

1. A production apparatus employed to produce an SiC single crystal by a solution growth method, comprising:
a crucible for accommodating an Si—C solution; and
a support shaft supporting the crucible,
wherein the support shaft includes a heat removing portion for removing heat from a bottom portion of the crucible, and
the heat removing portion includes one of
(a) a contact portion having a thermal conductivity not less than that of the bottom portion and contacting at least a portion of the bottom portion, and
(b) a space adjacent to at least a portion of the contact portion or the bottom portion.

2. The production apparatus according to claim 1 , wherein:
the support shaft includes:
a shaft body extending in a top-to-bottom direction; and
a pedestal located on an upper end of the shaft body and contacting the bottom portion, and
the contact portion includes the pedestal.

3. The production apparatus according to claim 1 , wherein:
the crucible includes a side wall extending in a top-to-bottom direction and connected with the bottom portion, and
a lower end portion of the side wall has a thickness greater than that of a portion of the side wall located as high as a liquid surface of the Si—C solution.

4. The production apparatus according to claim 3 , wherein the thickness of the lower end portion decreases as it goes upward.

5. The production apparatus according to claim 1 , further comprising: a cooling unit that cools the contact portion.

6. A method for producing an SiC single crystal by a solution growth method, comprising:
a preparation step in which a production apparatus is prepared that includes: a crucible accommodating a raw material for an Si—C solution; and a support shaft supporting the crucible, wherein the support shaft includes a heat removing portion for removing heat from a bottom portion of the crucible, and the heat removing portion includes one of (a) a contact portion having a thermal conductivity not less than that of the bottom portion and contacting at least a portion of the bottom portion, and (b) a space adjacent to at least a portion of the contact portion or the bottom portion;
a formation step in which the raw material in the crucible is heated so as to melt to form the Si—C solution; and
a growth step in which an SiC seed crystal is brought into contact with the Si—C solution to cause the SiC single crystal to grow on the SiC seed crystal,
wherein the growth step includes a heat removal step in which heat is removed from the bottom portion by at least one of a process in which heat is removed by radiation from the bottom portion to the space, a process in which heat is removed by radiation from the contact portion to the space, and a process in which heat is removed by heat transfer from the bottom portion to the contact portion.

Assignees

• Nippon Steel & Sumitomo Metal Corp
• Toyota Motor Co Ltd

Inventors

• Kamei Kazuhito
• Kusunoki Kazuhiko
• Kado Motohisa
• Daikoku Hironori
• Sakamoto Hidemitsu

Classifications

• C30B15/00

  Single-crystal growth by pulling from a melt, e.g. Czochralski method (under a protective fluid C30B27/00) · CPC title

• C30B29/36

  Carbides · CPC title

• C30B17/00 Primary

  Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method (C30B15/00 takes precedence) · CPC title