Apparatus for producing SiC single crystal by solution growth method, and method for producing SiC single crystal by using the production apparatus and crucible used in the production apparatus

Patent metadata

Field	Value
Publication number	US-9783911-B2
Application number	US-201314410969-A
Country	US
Kind code	B2
Filing date	Jul 15, 2013
Priority date	Jul 18, 2012
Publication date	Oct 10, 2017
Grant date	Oct 10, 2017

Abstract

A production apparatus is used for a solution growth method. The production apparatus includes a seed shaft and a crucible. The seed shaft has a lower end surface to which an SiC seed crystal is attached. The crucible contains an SiC solution. The crucible includes a cylindrical portion, a bottom portion, and an inner lid. The bottom portion is disposed at a lower end of the cylindrical portion. The inner lid is disposed in the cylindrical portion. The inner lid has a through hole and is positioned below a liquid surface of the SiC solution when the SiC solution is contained in the crucible.

First claim

The invention claimed is:

1. A method for producing an SiC single crystal by a solution growth method, the method comprising:
a step of preparing a seed shaft that extends in a vertical direction and a crucible that includes a cylindrical portion, a bottom portion disposed at a lower end of the cylindrical portion, and an inner lid having a through hole and disposed in the cylindrical portion;
a step of attaching an SiC seed crystal to a lower end surface of the seed shaft;
a step of heating the crucible that contains a raw material to produce an SiC solution, wherein the inner lid is positioned below a liquid surface of the produced SiC solution;
a step of bringing the SiC seed crystal that is attached to the lower end surface of the seed shaft into contact with the SiC solution; and
a step of growing an SiC single crystal on the SiC seed crystal, wherein when growing the SiC single crystal, the inner lid is positioned below a crystal growth surface of the SiC seed crystal.

2. The method according to claim 1 , wherein a ratio of a diameter of the through hole to an inner diameter of the cylindrical portion is 0.40 or greater.

3. The method according to claim 1 , wherein a ratio of a distance between the liquid surface of the SiC solution and an upper surface of the inner lid to a distance between a lower surface of the inner lid and an upper surface of the bottom portion is 0.17 or greater and 2.86 or less.

Assignees

• Yashiro Nobuyoshi
• Kamei Kazuhito
• Kusunoki Kazuhiko
• Okada Nobuhiro
• Moriguchi Koji
• Daikoku Hironori
• Sakamoto Hidemitsu
• Kado Motohisa
• Toyota Motor Co Ltd

Inventors

• Yashiro Nobuyoshi
• Kamei Kazuhito
• Kusunoki Kazuhiko
• Okada Nobuhiro
• Moriguchi Koji
• Daikoku Hironori
• Sakamoto Hidemitsu
• Kado Motohisa

Classifications

• C30B29/36

  Carbides · CPC title

• C30B15/10 Primary

  Crucibles or containers for supporting the melt · CPC title

• Y10T117/1032

  Seed pulling · CPC title

• C30B19/04

  the solvent being a component of the crystal composition · CPC title

• C30B15/32

  Seed holders, e.g. chucks · CPC title