Method for producing SiC single crystals by control of an angle formed by the meniscus and the side face of the seed crystal and production device for the method

Patent metadata

Field	Value
Publication number	US-9631295-B2
Application number	US-201114006640-A
Country	US
Kind code	B2
Filing date	Jul 27, 2011
Priority date	Mar 23, 2011
Publication date	Apr 25, 2017
Grant date	Apr 25, 2017

Abstract

Provided is a method for producing SiC single crystals while maintaining a temperature gradient such that the temperature decreases from within an Si solution inside a graphite crucible toward the solution surface, with the SiC seed crystals that have contacted the solution surface serving as the starting point for crystal seed growth, wherein when the crystal growth surface of the SiC seed crystals, which serves as the starting point for SiC single crystal growth, contacts the solution surface, the height by which the solution rises to the side of the SiC seed crystals is within the range where the SiC single crystals that have grown from the crystal growth surface and the SiC single crystals that have grown from the side grow as one SiC single crystal unit. Also provided is a device for producing an SiC single crystal comprising a graphite crucible, a heating device for heating and melting base materials in the crucible to form a base material solution and maintaining a temperature gradient required for growth of SiC single crystal, a support rod which holds a SiC seed crystal at its bottom end, and a holding structure which maintains the holding by the support rod so that a height by which the solution rises to the side of the SiC seed crystal is within a range where the SiC single crystal that have grown from the crystal growth surface and the SiC single crystal that have grown from the side grow as one SiC single crystal unit.

First claim

The invention claimed is:

1. A method of producing a SiC single crystal, in which a Si—C solution in a crucible is used to grow a SiC single crystal from a SiC seed crystal which has been brought into contact with a surface of the Si—C solution, comprising:
bringing the SiC seed crystal into contact with the solution surface and then pulling up the seed crystal, forming a meniscus between the seed crystal and the solution to obtain a wetting height of the solution to a side face of the SiC seed crystal is zero or within a range where a SiC single crystal which grows from a bottom face and a SiC single crystal which grows from the side face grow as an integral SiC single crystal, and growing the crystal in that state,
wherein an angle formed by the meniscus and the side face of the seed crystal is 200 degrees or less.

2. The method of producing a SiC single crystal of claim 1 , wherein only the bottom face of the SiC seed crystal is brought into contact with the solution surface to make the wetting height 0.

3. The method of producing a SiC single crystal of claim 1 , wherein the wetting height of the solution is less than 0.68 mm.

4. The method of producing a SiC single crystal of claim 3 , further comprising:
controlling a rate of expansion or rate of contraction of the growing crystal with an angle between a pull-up axis of the seed crystal and the meniscus.

5. The method of producing a SiC single crystal of claim 4 , wherein the angle between the pull-up axis and the meniscus is controlled with a pull-up height of the seed crystal.

6. The method of producing a SiC single crystal of claim 4 , further comprising:
preparing in advance a map of the pull-up height of the seed crystal in relation to the angle between the pull-up axis of the seed crystal and the meniscus; and
adjusting the pull-up height so as to adjust the angle between the pull-up axis and the meniscus.

7. The method of producing a SiC single crystal of claim 1 , further comprising:
maintaining a temperature gradient in the Si—C solution in the crucible such that the temperature decreases from the inside toward the solution surface.

8. The method of producing a SiC single crystal of claim 1 , wherein an angle formed by the bottom face of the seed crystal and the side face is 90 degrees or less.

9. The method of producing a SiC single crystal of claim 1 , wherein the bottom face of the seed crystal is the [0001] face or [000-1] face of the SiC crystal.

10. The method of producing a SiC single crystal of claim 2 , wherein the bottom face of the seed crystal is brought into contact with the solution surface, and then the seed crystal is immediately pulled up to form the meniscus.

11. The method of producing a SiC single crystal of claim 10 , wherein the seed crystal is rotated with respect to the solution surface when the seed crystal is pulled up to form the meniscus.

12. The method of producing a SiC single crystal of claim 1 , further comprising:
vibrating the solution surface; and
utilizing the vibration to bring the solution surface and the bottom face of the seed crystal into contact.

Assignees

• Daikoku Hironori
• Kamei Kazuhito
• Toyota Motor Co Ltd
• Nippon Steel & Sumitomo Metal Corp

Inventors

• Daikoku Hironori
• Kamei Kazuhito

Classifications

• C30B19/061

  Tipping system, e.g. by rotation · CPC title

• Y10T117/1032

  Seed pulling · CPC title

• C30B29/36 Primary

  Carbides · CPC title

• C30B17/00

  Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method (C30B15/00 takes precedence) · CPC title

• C30B19/12

  characterised by the substrate · CPC title