Method for producing SiC single crystal

Patent metadata

Field	Value
Publication number	US-10145025-B2
Application number	US-201615558699-A
Country	US
Kind code	B2
Filing date	Mar 16, 2016
Priority date	Mar 18, 2015
Publication date	Dec 4, 2018
Grant date	Dec 4, 2018

Abstract

Provided is a method for producing a SiC single crystal which can suppress generation of SiC polycrystals. The method according to the present embodiment is in accordance with a solution growth method. The method for producing a SiC single crystal according to the present embodiment comprises a power-output increasing step, a contact step, and a growth step. In the power-output increasing step, high-frequency power output of an induction heating device is increased to crystal-growth high-frequency power output. In the contact step, a SiC seed crystal is brought into contact with a Si—C solution. The high-frequency power output of the induction heating device in the contact step is more than 80% of the crystal-growth high-frequency power output. The temperature of the Si—C solution in the contact step is less than a crystal growth temperature. In the growth step, the SiC single crystal is grown at the crystal growth temperature.

First claim

The invention claimed is:

1. A method for producing a SiC single crystal by a solution growth method, comprising:
a power-output increasing step of increasing high-frequency power output of an induction heating device to crystal-growth high-frequency power output;
a contact step of bringing a SiC seed crystal into contact with a Si—C solution when the high-frequency power output of the induction heating device is larger than 80% of the crystal-growth high-frequency power output, and a temperature of the Si—C solution is less than a crystal growth temperature; and
a growth step of growing a SiC single crystal at the crystal growth temperature, wherein crystal growth is performed while increasing the crystal growth temperature, in the growth step.

2. A method for producing a SiC single crystal by a solution growth method, comprising:
a power-output increasing step of increasing high-frequency power output of an induction heating device to crystal-growth high-frequency power output;
a contact step of bringing a SIC seed crystal into contact with a Si—C solution when the high-frequency power output of the induction heating device is larger than 80% of the crystal-growth high-frequency power output, and a temperature of the Si—C solution is less than a crystal growth temperature;
a growth step of growing a SiC single crystal at the crystal growth temperature; and
a power-output maintaining step of maintaining the high-frequency power output of the induction heating device for a predetermined period of time in a state lower than the crystal-growth high-frequency power output, before the contact step and during the power-output increasing step, wherein crystal growth is performed while increasing the crystal growth temperature, in the growth step.

3. A method for producing a SiC single crystal by a solution growth method, comprising:
a power-output increasing step of increasing high-frequency power output of an induction heating device to crystal-growth high-frequency power output;
a contact step of bringing a SIC seed crystal into contact with a Si—C solution when the high-frequency power output of the induction heating device is larger than 80% of the crystal-growth high-frequency power output, and a temperature of the Si—C solution is less than a crystal growth temperature;
a growth step of growing a SiC single crystal at the crystal growth temperature; and
a meniscus forming step of moving the SiC seed crystal upward to form a meniscus, after the contact step, wherein
crystal growth is performed while increasing the crystal growth temperature, in the growth step.

4. A method for producing a SIC single crystal by a solution growth method, comprising:
a power-output increasing step of increasing high-frequency power output of an induction heating device to crystal-growth high-frequency power output;
a contact step of bringing a SiC seed crystal into contact with a Si—C solution when the high-frequency power output of the induction heating device is larger than 80% of the crystal-growth high-frequency power output, and a temperature of the Si—C solution is less than a crystal growth temperature;
a growth step of growing a SiC single crystal at the crystal growth temperature;
a power-output maintaining step of maintaining the high-frequency power output of the induction heating device for a predetermined period of time in a state lower than the crystal-growth high-frequency power output, before the contact step and during the power-output increasing step; and
a meniscus forming step of moving the SiC seed crystal upward to form a meniscus, after the contact step, wherein
crystal growth is performed while increasing the crystal growth temperature, in the growth step.

Assignees

• Toyota Motor Co Ltd

Inventors

• Seki Kazuaki
• Kusunoki Kazuhiko
• Kamei Kazuhito
• Danno Katsunori
• Daikoku Hironori
• Doi Masayoshi

Classifications

• H10P14/3408

  Silicon carbide · CPC title

• H10P14/2904

  Silicon carbide · CPC title

• H10P14/265

  using solutions · CPC title

• H10P14/263

  using melted materials · CPC title

• H01L21/02625

  Electricity · mapped topic