Production apparatus of SiC single crystal by solution growth method, method for producing SiC single crystal using the production apparatus, and crucible used in the production apparatus

Patent metadata

Field	Value
Publication number	US-9702056-B2
Application number	US-201214126942-A
Country	US
Kind code	B2
Filing date	Jun 11, 2012
Priority date	Jun 20, 2011
Publication date	Jul 11, 2017
Grant date	Jul 11, 2017

Abstract

A region of an SiC solution in the vicinity of an SiC seed crystal is cooled while suppressing the temperature variation in a peripheral region of the SiC solution. An apparatus includes a seed shaft and a crucible for an SiC solution. The seed shaft has a lower end surface for attachment to an SiC seed crystal. The crucible comprises a main body, an intermediate cover, and a top cover. The main body includes a first cylindrical portion and a bottom portion at a lower end portion of the first cylindrical portion. The intermediate cover is within the first cylindrical portion and above the liquid level of the SiC solution in the main body. The intermediate cover has a first through hole for the seed shaft. The top cover is disposed above the intermediate cover and has a second through hole for the seed shaft to pass through.

First claim

The invention claimed is:

1. A production apparatus of an SiC single crystal by a solution growth method, comprising:
a seed shaft having a lower end surface to which an SiC seed crystal is to be attached; and
a crucible for accommodating an SiC solution, wherein
the crucible comprising:
a main body including a first cylindrical portion, and a bottom portion disposed at a lower end portion of the first cylindrical portion;
an intermediate cover disposed within the first cylindrical portion and above the liquid level of the SiC solution in the main body, a first space being formed between the SIC solution and the intermediate cover, the intermediate cover having a first through hole through which the seed shaft is to be passed;
a top cover disposed above the intermediate cover, a second empty space being formed between the intermediate cover and the top cover, the top cover having a second through hole through which the seed shaft is to be passed; and
the top surface of the intermediate cover declines from an outer circumference side to an inner circumference side.

2. The production apparatus according to claim 1 , wherein
the intermediate cover further comprises a second cylindrical portion extending downwardly from the lower surface of the intermediate cover, the seed shaft being adapted to pass through the second cylindrical portion, and the second cylindrical portion having a lower end located apart from the liquid level of the SiC solution.

3. A crucible capable of accommodating an SiC solution and used in a production apparatus of an SiC single crystal for a solution growth method and, the apparatus comprising a seed shaft having a lower end to which an SiC seed crystal can be attached, the crucible comprising:
a main body including a first cylindrical portion, and a bottom portion disposed at a lower end portion of the first cylindrical portion;
an intermediate cover disposed within the cylindrical portion, and having a first through hole through which the seed shaft is to be passed, a first space being formed between the SiC solution and the intermediate cover when the SiC solution is contained in the crucible;
a top cover disposed above the intermediate cover, and having a second through hole through which the seed shaft is to be passed, a second empty space being formed between the intermediate cover and the top cover; and
the upper surface of the intermediate cover declines from an outer circumference side to an inner circumference side.

4. The crucible according to claim 3 , wherein
the intermediate cover further comprises a second cylindrical portion extending downwardly from the lower surface of the intermediate cover, and through which the seed shaft is to be passed.

5. A method for producing an SiC single crystal by a solution growth method, the method comprising the steps of:
providing a production apparatus including a seed shaft that extends in a vertical direction;
providing a crucible comprising: a main body including a cylindrical portion and a bottom portion disposed at a lower end portion of the cylindrical portion, an intermediate cover disposed within the main body and having a first through hole through which the seed shaft is to be passed, a first space being formed between the SiC solution and the intermediate cover when the SiC solution is contained in the crucible; and a top cover disposed above the intermediate cover and having a second through hole through which the seed shaft is to be passed, a second empty space being formed between the intermediate cover and the top cover;
attaching an SiC seed crystal to a lower end surface of the seed shaft;
heating the crucible housing a raw material to produce the SiC solution;
bringing the SiC seed crystal attached to the lower end surface of the seed shaft into contact with the SiC solution;
growing an SiC single crystal on the SiC seed crystal; and
housing a raw material of the SiC solution in the crucible such that the liquid level of the SiC solution to be produced is located below the intermediate cover before forming the SiC solution.

Assignees

• Kamei Kazuhito
• Kusunoki Kazuhiko
• Yashiro Nobuyoshi
• Okada Nobuhiro
• Daikoku Hironori
• Kado Motohisa
• Sakamoto Hidemitsu
• Nippon Steel & Sumitomo Metal Corp
• Toyota Motor Co Ltd

Inventors

• Kamei Kazuhito
• Kusunoki Kazuhiko
• Yashiro Nobuyoshi
• Okada Nobuhiro
• Daikoku Hironori
• Kado Motohisa
• Sakamoto Hidemitsu

Classifications

• C30B35/00

  Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure · CPC title

• Y10T117/1032

  Seed pulling · CPC title

• C30B29/36 Primary

  Carbides · CPC title

• C30B19/08

  Heating of the reaction chamber or the substrate · CPC title

• C30B17/00

  Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method (C30B15/00 takes precedence) · CPC title