Structure and method to achieve large strain in NS without addition of stack-generated defects
US-10283638-B2 · May 7, 2019 · US
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Bowen Robert C patents
Bowen Robert C is listed as an inventor on 31 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Bowen Robert C |
| Total patents | 31 |
| First publication | Feb 5, 2015 |
| Latest publication | May 7, 2019 |
Notable patents
Publications ranked by popularity score, then publication date.
Strained stacked nanosheet FETs and/or quantum well stacked nanosheet
US-10170549-B2 · Jan 1, 2019 · US
FinFET devices including recessed source/drain regions having optimized depths
US-10147793-B2 · Dec 4, 2018 · US
Method of making high-efficiency solar energy device
US-2018212176-A1 · Jul 26, 2018 · US
Multi-layer fin field effect transistor devices and methods of forming the same
US-9793403-B2 · Oct 17, 2017 · US
FinFET semiconductor devices including recessed source-drain regions on a bottom semiconductor layer and methods of fabricating the same
US-9716176-B2 · Jul 25, 2017 · US
Strained stacked nanosheet FETS and/or quantum well stacked nanosheet
US-9711414-B2 · Jul 18, 2017 · US
Finfet devices including high mobility channel materials with materials of graded composition in recessed source/drain regions
US-9685509-B2 · Jun 20, 2017 · US
Thermionically-overdriven tunnel FETs and methods of fabricating the same
US-9647098-B2 · May 9, 2017 · US
Low resistivity damascene interconnect
US-9613907-B2 · Apr 4, 2017 · US
Recent patents
Latest publications not already listed above.
Integrated circuit devices including FinFETs and methods of forming the same
US-9583590-B2 · Feb 28, 2017 · US
Crystalline multiple-nanosheet strained channel FETs and methods of fabricating the same
US-9570609-B2 · Feb 14, 2017 · US
Integrated circuit devices including strained channel regions and methods of forming the same
US-9525053-B2 · Dec 20, 2016 · US
Semiconductor devices with structures for suppression of parasitic bipolar effect in stacked nanosheet FETs and methods of fabricating the same
US-9461114-B2 · Oct 4, 2016 · US
Confined semi-metal field effect transistor
US-9431529-B2 · Aug 30, 2016 · US
Strained stacked nanosheet fets and/or quantum well stacked nanosheet
US-2016111284-A1 · Apr 21, 2016 · US
Strained stacked nanosheet fets and/or quantum well stacked nanosheet
US-2016111337-A1 · Apr 21, 2016 · US
Integrated circuits with Si and non-Si nanosheet FET co-integration with low band-to-band tunneling and methods of fabricating the same
US-9287357-B2 · Mar 15, 2016 · US
Rectangular nanosheet fabrication
US-2016071729-A1 · Mar 10, 2016 · US
Confined semi-metal field effect transistor
US-2016071970-A1 · Mar 10, 2016 · US
Low resistivity damascene interconnect
US-2016035675-A1 · Feb 4, 2016 · US
Thermionically-overdriven tunnel fets and methods of fabricating the same
US-2016020305-A1 · Jan 21, 2016 · US
Methods of fabricating quantum well field effect transistors having multiple delta doped layers
US-9236444-B2 · Jan 12, 2016 · US
Integrated Circuits with Si and Non-Si Nanosheet FET Co-Integration with Low Band-to-Band Tunneling and Methods of Fabricating the Same
US-2015364542-A1 · Dec 17, 2015 · US
Integrated circuit devices including FinFETS and methods of forming the same
US-9178045-B2 · Nov 3, 2015 · US
Quantum interference based logic devices including electron monochromator
US-9112130-B2 · Aug 18, 2015 · US
Methods of forming semiconductor patterns including reduced dislocation defects and devices formed using such methods
US-9064699-B2 · Jun 23, 2015 · US
Quantum interference based logic devices including electron monochromator
US-2015123701-A1 · May 7, 2015 · US
Integrated circuit devices including strained channel regions and methods of forming the same
US-2015123075-A1 · May 7, 2015 · US
Quantum electro-optical device using CMOS transistor with reverse polarity drain implant
US-9000505-B2 · Apr 7, 2015 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Samsung Electronics Co Ltd | 29 |
| Bowen Robert C | 9 |
| Rodder Mark S | 8 |
| Obradovic Borna J | 6 |
| Kittl Jorge A | 2 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H01L29/785 | 13 |
| H10D30/62 | 12 |
| H10D62/121 | 11 |
| H10D62/85 | 10 |
| H10D30/43 | 8 |